NO996113L - Fremgangsmåte og system for lokal gloeding av en mikrostruktur dannet på et substrat, samt innretning laget dermed - Google Patents

Fremgangsmåte og system for lokal gloeding av en mikrostruktur dannet på et substrat, samt innretning laget dermed

Info

Publication number
NO996113L
NO996113L NO996113A NO996113A NO996113L NO 996113 L NO996113 L NO 996113L NO 996113 A NO996113 A NO 996113A NO 996113 A NO996113 A NO 996113A NO 996113 L NO996113 L NO 996113L
Authority
NO
Norway
Prior art keywords
micromechanical
microstructure
glowing
local
substrate
Prior art date
Application number
NO996113A
Other languages
English (en)
Norwegian (no)
Other versions
NO996113D0 (no
Inventor
Clark T C Nguyen
Kun Wang
Original Assignee
Univ Michigan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Michigan filed Critical Univ Michigan
Publication of NO996113D0 publication Critical patent/NO996113D0/no
Publication of NO996113L publication Critical patent/NO996113L/no

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
    • H03H9/02401—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor by annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Micromachines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Glass Compositions (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Pressure Sensors (AREA)
  • Recrystallisation Techniques (AREA)
NO996113A 1997-06-13 1999-12-10 Fremgangsmåte og system for lokal gloeding av en mikrostruktur dannet på et substrat, samt innretning laget dermed NO996113L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/874,785 US5976994A (en) 1997-06-13 1997-06-13 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby
PCT/US1998/011028 WO1998057423A1 (en) 1997-06-13 1998-05-29 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby

Publications (2)

Publication Number Publication Date
NO996113D0 NO996113D0 (no) 1999-12-10
NO996113L true NO996113L (no) 2000-02-07

Family

ID=25364575

Family Applications (1)

Application Number Title Priority Date Filing Date
NO996113A NO996113L (no) 1997-06-13 1999-12-10 Fremgangsmåte og system for lokal gloeding av en mikrostruktur dannet på et substrat, samt innretning laget dermed

Country Status (10)

Country Link
US (2) US5976994A (de)
EP (1) EP0988695B1 (de)
JP (2) JP2002505046A (de)
KR (1) KR100370602B1 (de)
CN (1) CN1271474A (de)
AT (1) ATE238630T1 (de)
AU (1) AU7605098A (de)
DE (1) DE69813805T2 (de)
NO (1) NO996113L (de)
WO (1) WO1998057423A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6424074B2 (en) 1999-01-14 2002-07-23 The Regents Of The University Of Michigan Method and apparatus for upconverting and filtering an information signal utilizing a vibrating micromechanical device
US6713938B2 (en) 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator
US6577040B2 (en) 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6566786B2 (en) 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
US6593831B2 (en) 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6600252B2 (en) * 1999-01-14 2003-07-29 The Regents Of The University Of Michigan Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
US6346030B1 (en) * 2000-05-09 2002-02-12 Sandia Corporation Microdevice having interior cavity with high aspect ratio surface features and associated methods of manufacture and use
US6739190B2 (en) * 2000-08-24 2004-05-25 The Regents Of The University Of Michigan Micromechanical resonator device
DE10065723A1 (de) * 2000-12-29 2002-07-04 Bosch Gmbh Robert Anordnung zur Temperaturmessung und -regelung
US6568264B2 (en) * 2001-02-23 2003-05-27 Charles E. Heger Wireless swimming pool water level system
US6600389B2 (en) * 2001-05-30 2003-07-29 Intel Corporation Tapered structures for generating a set of resonators with systematic resonant frequencies
US6570468B2 (en) 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
EP1876608A3 (de) * 2001-09-10 2008-04-16 Microbridge Technologies Inc. Verfahren zum effektiven Abgleichen von Widerständen mittels gepulster Erwärmung
KR20050026904A (ko) * 2001-09-10 2005-03-16 마이크로브리지 테크놀로지스 인크. 저항기 트리밍 방법
US6630871B2 (en) * 2001-09-28 2003-10-07 Intel Corporation Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator
US7004015B2 (en) * 2001-10-25 2006-02-28 The Regents Of The University Of Michigan Method and system for locally sealing a vacuum microcavity, methods and systems for monitoring and controlling pressure and method and system for trimming resonant frequency of a microstructure therein
DE10156257A1 (de) 2001-11-09 2003-05-28 Bosch Gmbh Robert Mikromechanischer Resonator
US6605319B1 (en) * 2002-02-11 2003-08-12 Applied Materials, Inc. Use of integrated polygen deposition and RTP for microelectromechanical systems
US7029829B2 (en) * 2002-04-18 2006-04-18 The Regents Of The University Of Michigan Low temperature method for forming a microcavity on a substrate and article having same
US7261733B1 (en) * 2002-06-07 2007-08-28 Endovascular Technologies, Inc. Endovascular graft with sensors design and attachment methods
US7399313B2 (en) 2002-06-07 2008-07-15 Brown Peter S Endovascular graft with separable sensors
US7025778B2 (en) * 2002-06-07 2006-04-11 Endovascular Technologies, Inc. Endovascular graft with pressure, temperature, flow and voltage sensors
AU2003263841A1 (en) * 2002-08-01 2004-02-23 Georgia Tech Research Corporation Piezo electric on seminconductor on- insulator resonator
WO2004027796A2 (en) * 2002-08-07 2004-04-01 Georgia Tech Research Corporation Capacitive resonators and methods of fabrication
JP4189637B2 (ja) * 2002-09-19 2008-12-03 日本電気株式会社 フィルタ、複合フィルタ、それらを搭載したフィルタ実装体、集積回路チップ、電子機器およびそれらの周波数特性変更方法
US6930569B2 (en) * 2003-07-31 2005-08-16 Discera Micromechanical resonator having short support beams
US6870444B1 (en) * 2003-08-28 2005-03-22 Motorola, Inc. Electromechanical resonator and method of operating same
CN1849746B (zh) 2003-09-10 2011-01-12 Nxp股份有限公司 机电换能器和电设备
US6995622B2 (en) * 2004-01-09 2006-02-07 Robert Bosh Gmbh Frequency and/or phase compensated microelectromechanical oscillator
US7068125B2 (en) 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
US7102467B2 (en) * 2004-04-28 2006-09-05 Robert Bosch Gmbh Method for adjusting the frequency of a MEMS resonator
US7256107B2 (en) * 2004-05-04 2007-08-14 The Regents Of The University Of California Damascene process for use in fabricating semiconductor structures having micro/nano gaps
JP4611127B2 (ja) * 2004-06-14 2011-01-12 パナソニック株式会社 電気機械信号選択素子
US7176770B2 (en) * 2004-08-24 2007-02-13 Georgia Tech Research Corp. Capacitive vertical silicon bulk acoustic resonator
US7918800B1 (en) * 2004-10-08 2011-04-05 Endovascular Technologies, Inc. Aneurysm sensing devices and delivery systems
KR100610016B1 (ko) * 2004-11-18 2006-08-08 삼성전자주식회사 반도체 디바이스 제조를 위한 불순물 원자 활성화 장치 및그 방법
US7205867B2 (en) * 2005-05-19 2007-04-17 Robert Bosch Gmbh Microelectromechanical resonator structure, and method of designing, operating and using same
US7337671B2 (en) 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
CN101223692B (zh) * 2005-09-27 2012-05-09 松下电器产业株式会社 共振器及使用其的滤波器
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7767484B2 (en) 2006-05-31 2010-08-03 Georgia Tech Research Corporation Method for sealing and backside releasing of microelectromechanical systems
US20080054759A1 (en) * 2006-08-11 2008-03-06 Farrokh Ayazi Wafer-level encapsulation and sealing of electrostatic transducers
JP4977431B2 (ja) * 2006-10-12 2012-07-18 三洋電機株式会社 マイクロメカニカル共振器
JP4965962B2 (ja) * 2006-10-13 2012-07-04 学校法人立命館 マイクロメカニカル共振器
JP4337870B2 (ja) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 Ｍｅｍｓレゾネータ及びｍｅｍｓレゾネータの製造方法
JP2009060173A (ja) * 2007-08-29 2009-03-19 Seiko Instruments Inc 発振子及び該発振子を有する発振器
JP5039959B2 (ja) * 2007-08-31 2012-10-03 セイコーインスツル株式会社 発振器
JP4995675B2 (ja) * 2007-09-10 2012-08-08 セイコーインスツル株式会社 振動子デバイス及び発振器
JP2009088854A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd マイクロメカニカル共振器およびその製造方法
US9970764B2 (en) 2009-08-31 2018-05-15 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
US8686508B2 (en) 2009-09-03 2014-04-01 International Business Machines Corporation Structures, methods and applications for electrical pulse anneal processes
JP5277322B2 (ja) 2010-05-26 2013-08-28 パナソニック株式会社 Ｍｅｍｓ共振器
TWI511916B (zh) * 2012-06-28 2015-12-11 Nat Univ Tsing Hua 微機電共振震盪子結構及其驅動方法
US9584092B2 (en) * 2015-04-14 2017-02-28 International Business Machines Corporation Mechanical resonator with a spring-mass system comprising a phase-change material
CN114726339A (zh) * 2015-06-19 2022-07-08 芯时光公司 微机电谐振器
US10148244B1 (en) * 2015-09-15 2018-12-04 National Technology & Engineering Solutions Of Sandia, Llc Trimming method for microresonators and microresonators made thereby
CN117490669B (zh) * 2023-11-21 2025-03-21 中国人民解放军国防科技大学 一种谐振陀螺谐振子品质因数修调装置及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144184A (en) * 1990-01-26 1992-09-01 The Charles Stark Draper Laboratory, Inc. Micromechanical device with a trimmable resonant frequency structure and method of trimming same
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5451525A (en) * 1992-02-14 1995-09-19 Coulter Corporation Method and materials for determining particle count in a flow cytometer
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
DE4417132C2 (de) * 1994-05-17 1996-08-14 Ibm Resonanter Meßwertaufnehmer und dessen Verwendung
US5451425A (en) * 1994-09-13 1995-09-19 The United States Of America As Represented By The Secretary Of The Army Process for setting the frequency of a silicon microresonator
US5530342A (en) * 1994-09-30 1996-06-25 Rockwell International Corporation Micromachined rate sensor comb drive device and method
US5696491A (en) * 1995-06-07 1997-12-09 Regents Of The University Of California Self-excited microelectromechanical device
US5696591A (en) 1996-01-05 1997-12-09 Eastman Kodak Company Apparatus and method for detecting longitudinally oriented flaws in a moving web
JP3604259B2 (ja) 1997-06-12 2004-12-22 株式会社東芝 燃料交換機及びその制御装置
US5870007A (en) * 1997-06-16 1999-02-09 Roxburgh Ltd. Multi-dimensional physical actuation of microstructures

Also Published As

Publication number Publication date
US5976994A (en) 1999-11-02
CN1271474A (zh) 2000-10-25
KR100370602B1 (ko) 2003-02-05
ATE238630T1 (de) 2003-05-15
US6169321B1 (en) 2001-01-02
DE69813805D1 (de) 2003-05-28
EP0988695B1 (de) 2003-04-23
JP2002505046A (ja) 2002-02-12
AU7605098A (en) 1998-12-30
EP0988695A1 (de) 2000-03-29
NO996113D0 (no) 1999-12-10
DE69813805T2 (de) 2003-11-06
JP2009044741A (ja) 2009-02-26
WO1998057423A1 (en) 1998-12-17
KR20010013636A (ko) 2001-02-26

Similar Documents

Publication Publication Date Title
NO996113L (no) Fremgangsmåte og system for lokal gloeding av en mikrostruktur dannet på et substrat, samt innretning laget dermed
SE8502479D0 (sv) Integrerad halvledarkrets och sett att framstella densamma samt anvendning av en dylik krets for uppbyggnad av en flodesmetare
ID21598A (id) Substrat semikonduktor dan piranti semikonduktor dengan film tipis, metoda pembuatannya, dan peralatan oksidasi anoda
ITRM920518A1 (it) Dispositivo a semiconduttore controllabile con limitazione di corrente integrata e diseccitazione in caso di sovratemperatura.
DE69615355D1 (de) Verfahren zur schaffung gleichmässiger dicke und zur kapselung von mikromechanischen anordnungen in halbleiterprozessen
FR2828762B1 (fr) Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique
ATE234671T1 (de) Verfahren und vorrichtung zur konvektiven bewegung von flüssigkeiten in mikrosystemen
DE69823472D1 (de) Flüssigkristallanzeigevorrichtung, elektronisches Gerät und Verfahren zur Herstellung der Flüssigkristallanzeigevorrichtung
IT8985505A0 (it) Procedimento con azione combinata di vibrazione e pressione in ambiente privo d'aria per la formazione di lastre di materiale ceramico anche di grandi dimensioni con elevate caratteristiche meccaniche.
DK1200649T3 (da) Fremgangsmåde ved fremstilling af siliciumkrystaller under anvendelse af et elektrisk potentiale
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE3580025D1 (de) Halbleiter auf isolator-(soi)-anordnungen und verfahren zur herstellung von soi integrierten schaltungen.
DE68922732D1 (de) Metalloxydschäume hocher spezifischer oberfläche und verfahren zur herstellung.
DE3677033D1 (de) Keramisches substrat fuer mikroelektronische schaltungen und verfahren zu deren herstellung.
ATE41668T1 (de) Verfahren und vorrichtung zur herstellung hochmolekularer polyester.
DE3678715D1 (de) Verfahren und vorrichtung zur erzeugung einer eiskristallsuspension mittels gefrierverdampfung am tripelpunkt.
DE69019044D1 (de) Verfahren und Vorrichtung zur Metallformung unter Verwendung von Wärmedehnung und Schrumpfung.
DE58903971D1 (de) Verfahren und vorrichtung zur steuerung von ein- oder mehrphasigen wechselstromstellern.
DE69007449D1 (de) Verfahren zur Herstellung von Leistungsmos- und Halbleiteranordnungen und damit hergestellten Anordnungen.
NL1000253A1 (nl) Halfgeleiderlasertoestel en de wijze van vervaardiging daarvan.
DK1137826T3 (da) Monoatomart og monokrystallinsk lag med stor størrelse af carbon af diamanttype og fremgangsmåde til fremstilling af et sådant lag
DE69102892D1 (de) Sintermaterial auf Basis von Siliziumnitrid und Verfahren zur Herstellung desselben.
DE3786323D1 (de) Vorrichtung und verfahren zur regulierung der struktur optischer substrate.
DE69110029D1 (de) Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.
DE69013459D1 (de) Messverfahren für die Gleichstrom/Gleichspannungs-Charakteristik von Halbleiterbauteilen.

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application