PL1701376T3 - Próżniowy generator plazmowy - Google Patents

Próżniowy generator plazmowy

Info

Publication number
PL1701376T3
PL1701376T3 PL05005248T PL05005248T PL1701376T3 PL 1701376 T3 PL1701376 T3 PL 1701376T3 PL 05005248 T PL05005248 T PL 05005248T PL 05005248 T PL05005248 T PL 05005248T PL 1701376 T3 PL1701376 T3 PL 1701376T3
Authority
PL
Poland
Prior art keywords
signal
generates
generating
intermediate circuit
phase position
Prior art date
Application number
PL05005248T
Other languages
English (en)
Inventor
Michael Glück
Christoph Hofstetter
Gerd Hintz
Original Assignee
Huettinger Elektronik Gmbh Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huettinger Elektronik Gmbh Co Kg filed Critical Huettinger Elektronik Gmbh Co Kg
Publication of PL1701376T3 publication Critical patent/PL1701376T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
PL05005248T 2005-03-10 2005-03-10 Próżniowy generator plazmowy PL1701376T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05005248A EP1701376B1 (de) 2005-03-10 2005-03-10 Vakuumplasmagenerator

Publications (1)

Publication Number Publication Date
PL1701376T3 true PL1701376T3 (pl) 2007-04-30

Family

ID=34934179

Family Applications (1)

Application Number Title Priority Date Filing Date
PL05005248T PL1701376T3 (pl) 2005-03-10 2005-03-10 Próżniowy generator plazmowy

Country Status (9)

Country Link
US (2) US7452443B2 (pl)
EP (1) EP1701376B1 (pl)
JP (1) JP4824438B2 (pl)
KR (1) KR100796475B1 (pl)
CN (1) CN100409727C (pl)
AT (1) ATE344973T1 (pl)
DE (1) DE502005000175D1 (pl)
PL (1) PL1701376T3 (pl)
TW (1) TWI348335B (pl)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7586099B2 (en) * 2005-03-30 2009-09-08 Huettinger Elektronik Gmbh + Co. Kg Vacuum plasma generator
DE502005003768D1 (de) * 2005-10-17 2008-05-29 Huettinger Elektronik Gmbh HF-Plasmaversorgungseinrichtung
US8262847B2 (en) * 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US8222156B2 (en) * 2006-12-29 2012-07-17 Lam Research Corporation Method and apparatus for processing a substrate using plasma
JP5606312B2 (ja) * 2007-07-23 2014-10-15 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト プラズマ給電装置
EP2202776B1 (de) 2008-12-23 2012-02-15 HÜTTINGER Elektronik GmbH + Co. KG Messverfahren und Messeinrichtung für eine Plasmaversorgungseinrichtung
DE102009054449A1 (de) * 2009-11-25 2011-05-26 Hüttinger Elektronik Gmbh + Co. Kg Selbstabgleichende RF-Plasmastromversorgung
DE102010008777A1 (de) 2010-02-22 2011-08-25 Siemens Aktiengesellschaft, 80333 Hochfrequenzversorgung einer Last ohne Impedanzanpassung
DE102010002753B4 (de) 2010-03-11 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungsanordnung mit mehreren Leistungskopplungsstufen
DE102010002754B4 (de) * 2010-03-11 2012-07-12 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungsanordnung mit Quadraturkoppler
US9002781B2 (en) 2010-08-17 2015-04-07 Fujitsu Limited Annotating environmental data represented by characteristic functions
US9138143B2 (en) 2010-08-17 2015-09-22 Fujitsu Limited Annotating medical data represented by characteristic functions
US8874607B2 (en) * 2010-08-17 2014-10-28 Fujitsu Limited Representing sensor data as binary decision diagrams
US8930394B2 (en) * 2010-08-17 2015-01-06 Fujitsu Limited Querying sensor data stored as binary decision diagrams
US9176819B2 (en) 2011-09-23 2015-11-03 Fujitsu Limited Detecting sensor malfunctions using compression analysis of binary decision diagrams
US9075908B2 (en) 2011-09-23 2015-07-07 Fujitsu Limited Partitioning medical binary decision diagrams for size optimization
DE202011109467U1 (de) 2011-12-22 2012-02-03 Hüttinger Elektronik Gmbh + Co. Kg Plasmastromversorungssystem
US8736377B2 (en) * 2012-10-30 2014-05-27 Mks Instruments, Inc. RF pulse edge shaping
US10191466B2 (en) 2015-01-28 2019-01-29 Lam Research Corporation Systems and methods for synchronizing execution of recipe sets
DE102015212233A1 (de) 2015-06-30 2017-01-05 TRUMPF Hüttinger GmbH + Co. KG Leistungscombiner mit symmetrisch angeordnetem Kühlkörper und Leistungscombineranordnung
DE102016109343A1 (de) * 2016-05-20 2017-11-23 Christof-Herbert Diener Schaltungsanordnung zur Bereitstellung von Hochfrequenzenergie und System zur Erzeugung einer elektrischen Entladung
DE102016110141A1 (de) * 2016-06-01 2017-12-07 TRUMPF Hüttinger GmbH + Co. KG Verfahren und Vorrichtung zum Zünden einer Plasmalast
EP3488523B1 (en) * 2016-07-21 2023-10-04 LG Electronics Inc. Power converting system
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10573495B2 (en) * 2017-10-09 2020-02-25 Denton Vacuum, LLC Self-neutralized radio frequency plasma ion source
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
EP3605582A1 (en) 2018-08-02 2020-02-05 TRUMPF Huettinger Sp. Z o. o. Power converter and power supply system
EP3605115A1 (en) 2018-08-02 2020-02-05 TRUMPF Huettinger Sp. Z o. o. Arc detector for detecting arcs, plasma system and method of detecting arcs
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
WO2023081110A1 (en) * 2021-11-03 2023-05-11 Lam Research Corporation Method and apparatus for automated regulation of a frequency-modulated multilevel outphasing power amplifier
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
DE102022108631A1 (de) 2022-04-08 2023-10-12 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Versorgung eines Lasers oder Plasmas mit Leistung und Plasma- oder Lasersystem
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
DE102023111812A1 (de) * 2023-05-05 2024-11-07 TRUMPF Hüttinger GmbH + Co. KG Leistungscombiner zur Kopplung von HF-Signalen für ein Plasmaprozessversorgungssystem und ein Plasmaprozesssystem
DE102024102016A1 (de) 2024-01-24 2025-07-24 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungssystem zur Versorgung eines Plasma- oder Gaslaserprozesses und Verfahren zur Anregung eines Plasmas
DE102024111747B3 (de) 2024-04-25 2025-09-18 TRUMPF Hüttinger GmbH + Co. KG HF-Generator für ein Plasmaerzeugungssystem, ein solches Plasmaerzeugungssystem und ein Verfahren zum Betrieb des HF-Generators
DE102024114020A1 (de) 2024-05-17 2025-11-20 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungssystem zur Versorgung eines Plasma- oder Gaslaserprozesses und Verfahren zum Betrieb eines solchen Leistungsversorgungssystems

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866702A (ja) 1981-10-19 1983-04-21 川崎重工業株式会社 ボイラドラムの水位制御装置
JPS5866702U (ja) * 1981-10-30 1983-05-06 日本電気株式会社 電力合成装置
US4499441A (en) * 1982-10-14 1985-02-12 Massachusetts Institute Of Technology Superconducting signal processing circuits
US4701716A (en) * 1986-05-07 1987-10-20 Rca Corporation Parallel distributed signal amplifiers
JPH03504429A (ja) * 1988-04-20 1991-09-26 シーメンス　アクチェンゲゼルシヤフト 特にｔｅガスレーザー用の高出力の高電圧パルス発生装置および方法
US5138287A (en) 1990-05-11 1992-08-11 Hewlett-Packard Company High frequency common mode choke
JPH0436482A (ja) * 1990-05-30 1992-02-06 Mitsubishi Electric Corp プラズマ処理装置
JPH04111501A (ja) * 1990-08-30 1992-04-13 Mitsubishi Electric Corp 方向性結合器
DE4031286C2 (de) * 1990-10-04 1995-05-11 Leybold Ag Einrichtung für die Stromversorgung einer Glühkathode
JPH056799A (ja) * 1991-06-27 1993-01-14 Yokogawa Electric Corp Ｉｃｐ用ｒｆ電源装置
WO1993021685A1 (en) * 1992-04-16 1993-10-28 Advanced Energy Industries, Inc. Stabilizer for switch-mode powered rf plasma processing
JPH0732078B2 (ja) * 1993-01-14 1995-04-10 株式会社アドテック 高周波プラズマ用電源及びインピーダンス整合装置
US5712592A (en) 1995-03-06 1998-01-27 Applied Materials, Inc. RF plasma power supply combining technique for increased stability
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6020794A (en) * 1998-02-09 2000-02-01 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator
JP4003996B2 (ja) 1998-09-21 2007-11-07 ミヤチテクノス株式会社 Ｑスイッチ型レーザ装置
JP2000114927A (ja) * 1998-09-30 2000-04-21 Matsushita Electric Ind Co Ltd 可変位相器
JP2000201043A (ja) * 1999-01-07 2000-07-18 Nec Corp 周波数利得特性調整回路
JP4678905B2 (ja) * 1999-12-20 2011-04-27 徳芳 佐藤 プラズマ処理装置
JP3310266B2 (ja) * 2000-11-09 2002-08-05 日本電業工作株式会社 可変移相器
US6765455B1 (en) * 2000-11-09 2004-07-20 Merrimac Industries, Inc. Multi-layered spiral couplers on a fluropolymer composite substrate
JP2002263472A (ja) * 2001-03-06 2002-09-17 Nippon Paint Co Ltd インバータ回路を用いたプラズマ処理装置及びプラズマ処理方法
JP4111501B2 (ja) 2001-03-26 2008-07-02 学校法人金沢工業大学 走査型アトムプローブおよび走査型アトムプローブを用いた分析方法
US6522222B1 (en) * 2001-06-26 2003-02-18 Yuriy Nikitich Pchelnikov Electromagnetic delay line with improved impedance conductor configuration
KR20030002509A (ko) 2001-06-29 2003-01-09 삼성전자 주식회사 Ｒｆ파워 인가 시스템 및 이를 포함하는 반도체 소자 제조장치
JP4042363B2 (ja) * 2001-07-23 2008-02-06 株式会社日立国際電気 プラズマ生成用の螺旋共振装置
JP4131793B2 (ja) * 2001-12-10 2008-08-13 東京エレクトロン株式会社 高周波電源及びその制御方法、並びにプラズマ処理装置
WO2003055286A1 (en) * 2001-12-10 2003-07-03 Tokyo Electron Limited High-frequency power source and its control method, and plasma processor
EP1488444B1 (de) * 2002-03-15 2016-11-02 Oerlikon Surface Solutions AG, Pfäffikon Vakuumplasmagenerator
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
JP3641785B2 (ja) * 2002-08-09 2005-04-27 株式会社京三製作所 プラズマ発生用電源装置
JP2004320418A (ja) * 2003-04-16 2004-11-11 Daihen Corp 高周波電源装置
US7221102B2 (en) * 2003-02-07 2007-05-22 Daihen Corporation High-frequency power supply device
TW595272B (en) 2003-07-18 2004-06-21 Creating Nano Technologies Inc Plasma producing system
CN100570805C (zh) * 2003-09-22 2009-12-16 Mks仪器股份有限公司 避免射频等离子加工中的不稳定性的方法和装置
TWM257076U (en) 2004-02-12 2005-02-11 Jeng-Ming Wu Improved microwave plasma producer

Also Published As

Publication number Publication date
JP2006253150A (ja) 2006-09-21
EP1701376B1 (de) 2006-11-08
KR100796475B1 (ko) 2008-01-21
CN1832657A (zh) 2006-09-13
TW200644741A (en) 2006-12-16
US20060196426A1 (en) 2006-09-07
TWI348335B (en) 2011-09-01
CN100409727C (zh) 2008-08-06
EP1701376A1 (de) 2006-09-13
US20090117288A1 (en) 2009-05-07
US7452443B2 (en) 2008-11-18
DE502005000175D1 (de) 2006-12-21
ATE344973T1 (de) 2006-11-15
JP4824438B2 (ja) 2011-11-30
KR20060097654A (ko) 2006-09-14
US8133347B2 (en) 2012-03-13

Similar Documents

Publication Publication Date Title
TWI348335B (en) Vacuum plasma generator
DE502005003768D1 (de) HF-Plasmaversorgungseinrichtung
US8203382B2 (en) Amplifier circuitry
JP5633163B2 (ja) Ｄ級電力増幅装置
WO2003056698A3 (en) Power amplifier
WO2005010938A3 (en) Impedance matching network with termination of secondary rf frequencies
ATE361589T1 (de) Kommunikationsverfahren und -vorrichting
EP1263135A3 (en) Dual Directional Harmonics Dissipation System
MY136501A (en) Method and apparatus to match output impedance of combined outphasing power amplifiers
EP1179834A3 (en) Plasma processing apparatus and performance validation system therefor
TW200625051A (en) Switching power supply control
IT1314420B1 (it) Dispositivo di generazione di campo elettromedicale
WO2007044248B1 (en) Low-voltage inductively coupled source for plasma processing
TW201338635A (zh) 射頻匹配網路及其所應用的等離子體處理腔
TW200501743A (en) High frequency signal receiving device
Rouse et al. Multi-megahertz load independent synchronous rectifier for resonant wireless power transfer applications
WO2006070809A1 (ja) 高周波電源装置
DE60304488D1 (de) Gleichstromkompensationskreis für einen verstärker mit variabler verstärkung
GB2392787B (en) Low output noise switched mode power supply with shieldless transformer
CN102162695A (zh) 无绳家庭一体冰箱
JP2005269869A (ja) 高周波電源装置
TW200605495A (en) High frequency amplifier
CN101252629A (zh) 供电装置、信号输出设备和供电方法
RU52639U1 (ru) Устройство генерации шума
WO2001095352A3 (en) Apparatus and method for accelerating electrons in a plasma reactor