PL183356B1 - Źródło prądowe - Google Patents

Źródło prądowe

Info

Publication number
PL183356B1
PL183356B1 PL97320932A PL32093297A PL183356B1 PL 183356 B1 PL183356 B1 PL 183356B1 PL 97320932 A PL97320932 A PL 97320932A PL 32093297 A PL32093297 A PL 32093297A PL 183356 B1 PL183356 B1 PL 183356B1
Authority
PL
Poland
Prior art keywords
transistor
current source
key
transistors
keys
Prior art date
Application number
PL97320932A
Other languages
English (en)
Polish (pl)
Other versions
PL320932A1 (en
Inventor
Friedbert Riedel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of PL320932A1 publication Critical patent/PL320932A1/xx
Publication of PL183356B1 publication Critical patent/PL183356B1/pl

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
PL97320932A 1996-07-19 1997-07-03 Źródło prądowe PL183356B1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH181196 1996-07-19

Publications (2)

Publication Number Publication Date
PL320932A1 PL320932A1 (en) 1998-02-02
PL183356B1 true PL183356B1 (pl) 2002-06-28

Family

ID=4219161

Family Applications (1)

Application Number Title Priority Date Filing Date
PL97320932A PL183356B1 (pl) 1996-07-19 1997-07-03 Źródło prądowe

Country Status (5)

Country Link
EP (1) EP0821460B1 (de)
AT (1) ATE219610T1 (de)
CZ (1) CZ223297A3 (de)
DE (1) DE59707548D1 (de)
PL (1) PL183356B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149769A1 (de) * 2001-10-09 2003-04-17 Philips Corp Intellectual Pty Digital schaltbare Stromquelle

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4325899C2 (de) * 1993-08-02 1995-11-16 Siemens Ag MOS-Schaltstufe
JP2776285B2 (ja) * 1995-01-13 1998-07-16 日本電気株式会社 電流スイッチ回路

Also Published As

Publication number Publication date
ATE219610T1 (de) 2002-07-15
CZ223297A3 (cs) 1998-02-18
PL320932A1 (en) 1998-02-02
EP0821460A3 (de) 1998-04-08
DE59707548D1 (de) 2002-07-25
EP0821460A2 (de) 1998-01-28
EP0821460B1 (de) 2002-06-19

Similar Documents

Publication Publication Date Title
US4853654A (en) MOS semiconductor circuit
US5339236A (en) Charge pump circuit for intermediate voltage between power supply voltage and its double voltage
JP2001508635A (ja) ゼロ遅延の、スルーレートが制御された出力バッファ
EP0508673B1 (de) Schnelle Durchgangsgatte-, Verriegelungs- und Flip-Flop-Schaltungen
US10139850B2 (en) Analog boost circuit for fast recovery of mirrored current
US7504862B2 (en) Level shifter translator
US5929654A (en) Temperature-insensitive current controlled CMOS output driver
US5977811A (en) Shift level circuit for a high side driver circuit
US5929679A (en) Voltage monitoring circuit capable of reducing power dissipation
US5235218A (en) Switching constant current source circuit
JPH08294267A (ja) 昇圧回路
WO2004023654A1 (en) Oscillator circuit having reduced layout area and lower power supply transients
US5457653A (en) Technique to prevent deprogramming a floating gate transistor used to directly switch a large electrical signal
JP3227946B2 (ja) レベル変換回路
US6191624B1 (en) Voltage comparator
JP3652793B2 (ja) 半導体装置の電圧変換回路
US6825699B2 (en) Charge pump circuit, passive buffer that employs the charge pump circuit, and pass gate that employs the charge pump circuit
US6542004B1 (en) Output buffer method and apparatus with on resistance and skew control
PL183356B1 (pl) Źródło prądowe
EP0468210B1 (de) Schaltung zum Ansteuern einer schwebenden Schaltung mit einem digitalen Signal
US6288603B1 (en) High-voltage bidirectional switch made using high-voltage MOS transistors
US4775806A (en) Integrated circuit having capacitive process-scatter compensation
JPH0847172A (ja) 過渡電流低減法およびその回路
US5831465A (en) Variable delay circuit
JP3927312B2 (ja) 入力増幅器

Legal Events

Date Code Title Description
LAPS Decisions on the lapse of the protection rights

Effective date: 20050703