PL1871928T3 - Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych - Google Patents

Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych

Info

Publication number
PL1871928T3
PL1871928T3 PL06753501T PL06753501T PL1871928T3 PL 1871928 T3 PL1871928 T3 PL 1871928T3 PL 06753501 T PL06753501 T PL 06753501T PL 06753501 T PL06753501 T PL 06753501T PL 1871928 T3 PL1871928 T3 PL 1871928T3
Authority
PL
Poland
Prior art keywords
substrates
layers
iii
semiconductor devices
producing
Prior art date
Application number
PL06753501T
Other languages
English (en)
Inventor
Ferdinand Scholz
Peter Brückner
Frank Habel
Matthias Peter
Klaus Köhler
Original Assignee
Freiberger Compound Mat Gmbh
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh, Osram Opto Semiconductors Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of PL1871928T3 publication Critical patent/PL1871928T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
PL06753501T 2005-05-06 2006-05-05 Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych PL1871928T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005021099A DE102005021099A1 (de) 2005-05-06 2005-05-06 GaN-Schichten
EP06753501.3A EP1871928B1 (en) 2005-05-06 2006-05-05 Method for producing iii-n layers, substrates comprising iii-n layers and use of such substrates in semiconductor devices
PCT/EP2006/004233 WO2006119927A1 (en) 2005-05-06 2006-05-05 Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon

Publications (1)

Publication Number Publication Date
PL1871928T3 true PL1871928T3 (pl) 2014-03-31

Family

ID=36764393

Family Applications (2)

Application Number Title Priority Date Filing Date
PL11157196T PL2322699T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania podłoży III-N i wolnych warstw III-N
PL06753501T PL1871928T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PL11157196T PL2322699T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania podłoży III-N i wolnych warstw III-N

Country Status (9)

Country Link
US (2) US7998273B2 (pl)
EP (2) EP1871928B1 (pl)
JP (2) JP5258555B2 (pl)
KR (2) KR101348985B1 (pl)
CN (2) CN102268737B (pl)
DE (1) DE102005021099A1 (pl)
PL (2) PL2322699T3 (pl)
TW (1) TWI475598B (pl)
WO (1) WO2006119927A1 (pl)

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US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
TWI350784B (en) * 2006-12-28 2011-10-21 Saint Gobain Ceramics Sapphire substrates and methods of making same
WO2008083071A1 (en) 2006-12-28 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Method of grinding a sapphire substrate
WO2008083073A1 (en) 2006-12-28 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
WO2009143226A1 (en) 2008-05-21 2009-11-26 Lumenz, Inc. Zinc-oxide based epitaxial layers and devices
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US9336989B2 (en) * 2012-02-13 2016-05-10 Silicon Genesis Corporation Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process
US9896779B2 (en) * 2012-03-21 2018-02-20 Freiberger Compound Materials Gmbh Method for producing III-N single crystals, and III-N single crystal
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
CN106784181B (zh) * 2016-12-14 2020-06-23 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
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Also Published As

Publication number Publication date
US20080166522A1 (en) 2008-07-10
CN102268737A (zh) 2011-12-07
JP5908853B2 (ja) 2016-04-26
PL2322699T3 (pl) 2014-06-30
CN102268737B (zh) 2014-06-18
JP2008542160A (ja) 2008-11-27
KR101472832B1 (ko) 2014-12-16
TWI475598B (zh) 2015-03-01
KR20080017003A (ko) 2008-02-25
DE102005021099A1 (de) 2006-12-07
US7998273B2 (en) 2011-08-16
CN101258271A (zh) 2008-09-03
EP1871928B1 (en) 2013-10-30
EP2322699A3 (en) 2011-06-22
EP2322699A2 (en) 2011-05-18
JP2013136512A (ja) 2013-07-11
EP1871928A1 (en) 2008-01-02
US9115444B2 (en) 2015-08-25
KR101348985B1 (ko) 2014-01-09
TW200723365A (en) 2007-06-16
US20110018106A1 (en) 2011-01-27
WO2006119927A1 (en) 2006-11-16
KR20130075784A (ko) 2013-07-05
JP5258555B2 (ja) 2013-08-07
EP2322699B1 (en) 2014-03-26

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