PL2322699T3 - Sposób wytwarzania podłoży III-N i wolnych warstw III-N - Google Patents

Sposób wytwarzania podłoży III-N i wolnych warstw III-N

Info

Publication number
PL2322699T3
PL2322699T3 PL11157196T PL11157196T PL2322699T3 PL 2322699 T3 PL2322699 T3 PL 2322699T3 PL 11157196 T PL11157196 T PL 11157196T PL 11157196 T PL11157196 T PL 11157196T PL 2322699 T3 PL2322699 T3 PL 2322699T3
Authority
PL
Poland
Prior art keywords
iii
substrates
layers
free
standing
Prior art date
Application number
PL11157196T
Other languages
English (en)
Inventor
Ferdinand Scholz
Peter Brückner
Frank Habel
Matthias Peter
Klaus Köhler
Original Assignee
Freiberger Compound Mat Gmbh
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh, Osram Opto Semiconductors Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of PL2322699T3 publication Critical patent/PL2322699T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
PL11157196T 2005-05-06 2006-05-05 Sposób wytwarzania podłoży III-N i wolnych warstw III-N PL2322699T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005021099A DE102005021099A1 (de) 2005-05-06 2005-05-06 GaN-Schichten
EP06753501.3A EP1871928B1 (en) 2005-05-06 2006-05-05 Method for producing iii-n layers, substrates comprising iii-n layers and use of such substrates in semiconductor devices
EP11157196.4A EP2322699B1 (en) 2005-05-06 2006-05-05 Process for producing III-N substrates and free-standing III-N layers

Publications (1)

Publication Number Publication Date
PL2322699T3 true PL2322699T3 (pl) 2014-06-30

Family

ID=36764393

Family Applications (2)

Application Number Title Priority Date Filing Date
PL11157196T PL2322699T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania podłoży III-N i wolnych warstw III-N
PL06753501T PL1871928T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL06753501T PL1871928T3 (pl) 2005-05-06 2006-05-05 Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych

Country Status (9)

Country Link
US (2) US7998273B2 (pl)
EP (2) EP1871928B1 (pl)
JP (2) JP5258555B2 (pl)
KR (2) KR101472832B1 (pl)
CN (2) CN101258271A (pl)
DE (1) DE102005021099A1 (pl)
PL (2) PL2322699T3 (pl)
TW (1) TWI475598B (pl)
WO (1) WO2006119927A1 (pl)

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EP2121242B1 (en) 2006-12-28 2012-02-15 Saint-Gobain Ceramics & Plastics, Inc. Method of grinding a sapphire substrate
RU2414550C1 (ru) 2006-12-28 2011-03-20 Сэнт-Гобэн Керамикс Энд Пластикс, Инк. Сапфировая подложка (варианты)
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
EP2304780A1 (en) * 2008-05-21 2011-04-06 Lumenz, Inc. Zinc-oxide based epitaxial layers and devices
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US9336989B2 (en) * 2012-02-13 2016-05-10 Silicon Genesis Corporation Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process
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CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
CN106784181B (zh) * 2016-12-14 2020-06-23 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
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Also Published As

Publication number Publication date
KR101472832B1 (ko) 2014-12-16
US20110018106A1 (en) 2011-01-27
CN101258271A (zh) 2008-09-03
KR101348985B1 (ko) 2014-01-09
DE102005021099A1 (de) 2006-12-07
EP2322699A2 (en) 2011-05-18
CN102268737A (zh) 2011-12-07
PL1871928T3 (pl) 2014-03-31
JP5908853B2 (ja) 2016-04-26
US9115444B2 (en) 2015-08-25
JP5258555B2 (ja) 2013-08-07
EP2322699B1 (en) 2014-03-26
JP2013136512A (ja) 2013-07-11
TWI475598B (zh) 2015-03-01
JP2008542160A (ja) 2008-11-27
WO2006119927A1 (en) 2006-11-16
EP1871928A1 (en) 2008-01-02
US7998273B2 (en) 2011-08-16
TW200723365A (en) 2007-06-16
EP2322699A3 (en) 2011-06-22
CN102268737B (zh) 2014-06-18
US20080166522A1 (en) 2008-07-10
KR20080017003A (ko) 2008-02-25
EP1871928B1 (en) 2013-10-30
KR20130075784A (ko) 2013-07-05

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