PL1908099T3 - Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej - Google Patents

Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej

Info

Publication number
PL1908099T3
PL1908099T3 PL06792997T PL06792997T PL1908099T3 PL 1908099 T3 PL1908099 T3 PL 1908099T3 PL 06792997 T PL06792997 T PL 06792997T PL 06792997 T PL06792997 T PL 06792997T PL 1908099 T3 PL1908099 T3 PL 1908099T3
Authority
PL
Poland
Prior art keywords
semi
conductor substrate
hydride
producing
free
Prior art date
Application number
PL06792997T
Other languages
English (en)
Inventor
Christian Hennig
Markus Weyers
Eberhard Richter
Guenther Traenkle
Original Assignee
Freiberger Compound Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of PL1908099T3 publication Critical patent/PL1908099T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
PL06792997T 2005-08-29 2006-08-24 Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej PL1908099T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005041643A DE102005041643A1 (de) 2005-08-29 2005-08-29 Halbleitersubstrat sowie Verfahren und Maskenschicht zur Herstellung eines freistehenden Halbleitersubstrats mittels der Hydrid-Gasphasenepitaxie
PCT/EP2006/065659 WO2007025930A1 (de) 2005-08-29 2006-08-24 Halbleitersubstrat sowie verfahren und maskenschicht zur herstellung eines freistehenden halbleitersubstrats mittels der hydrid-gasphasenepitaxie
EP06792997A EP1908099B1 (de) 2005-08-29 2006-08-24 Halbleitersubstrat sowie verfahren und maskenschicht zur herstellung eines freistehenden halbleitersubstrats mittels der hydrid-gasphasenepitaxie

Publications (1)

Publication Number Publication Date
PL1908099T3 true PL1908099T3 (pl) 2011-12-30

Family

ID=37460039

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06792997T PL1908099T3 (pl) 2005-08-29 2006-08-24 Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej

Country Status (8)

Country Link
US (1) US8591652B2 (pl)
EP (1) EP1908099B1 (pl)
JP (1) JP5371430B2 (pl)
KR (1) KR101380717B1 (pl)
CN (1) CN101218662B (pl)
DE (1) DE102005041643A1 (pl)
PL (1) PL1908099T3 (pl)
WO (1) WO2007025930A1 (pl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100025727A1 (en) * 2008-08-04 2010-02-04 Benjamin Allen Haskell Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures
US20120094434A1 (en) * 2008-08-04 2012-04-19 Benjamin Allen Haskell Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures
JP5095653B2 (ja) * 2009-03-23 2012-12-12 日本電信電話株式会社 窒化物半導体構造
JP2012054364A (ja) 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
KR101112118B1 (ko) * 2010-09-24 2012-02-22 한국광기술원 자립형 ｉｉｉ족 질화물 기판의 제조방법
US20130214325A1 (en) * 2010-10-29 2013-08-22 Tokuyama Corporation Method for Manufacturing Optical Element
US9024310B2 (en) * 2011-01-12 2015-05-05 Tsinghua University Epitaxial structure
JP5754191B2 (ja) * 2011-03-18 2015-07-29 株式会社リコー １３族窒化物結晶の製造方法および１３族窒化物結晶基板の製造方法
JP5451796B2 (ja) * 2012-03-06 2014-03-26 日本電信電話株式会社 窒化物半導体構造
CN106968014B (zh) * 2012-03-21 2019-06-04 弗赖贝格化合物原料有限公司 用于制备iii-n单晶的方法以及iii-n单晶
CN103367121B (zh) * 2012-03-28 2016-04-13 清华大学 外延结构体的制备方法
CN103367122B (zh) * 2012-03-28 2016-03-30 清华大学 外延结构体的制备方法
US9245747B2 (en) * 2014-05-01 2016-01-26 International Business Machines Corporation Engineered base substrates for releasing III-V epitaxy through spalling
WO2016024960A1 (en) * 2014-08-13 2016-02-18 Intel Corporation Self-aligned gate last iii-n transistors
US10241398B2 (en) * 2015-05-21 2019-03-26 Ev Group E. Thallner Gmbh Method for application of an overgrowth layer on a germ layer
CN107093665B (zh) * 2017-05-15 2019-07-09 中国电子科技集团公司第二十六研究所 一种压电薄膜换能器用WSiAlN薄膜及其制备方法
CN111218643A (zh) * 2020-01-19 2020-06-02 镓特半导体科技（上海）有限公司 自支撑氮化镓层及其制作方法
KR20230028782A (ko) * 2020-06-19 2023-03-02 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반도체 디바이스를 실현하기 위한 이송 프로세스
CN112820632B (zh) * 2021-01-14 2024-01-09 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
JPS5664475A (en) * 1979-08-23 1981-06-01 Unisearch Ltd Solar battery with branching diode
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method
US5675856A (en) * 1996-06-14 1997-10-14 Solid State Equipment Corp. Wafer scrubbing device
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
WO1999001594A1 (en) 1997-07-03 1999-01-14 Cbl Technologies Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
FR2769924B1 (fr) 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
TW417315B (en) 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
JP2001135575A (ja) 1999-03-12 2001-05-18 Sumitomo Chem Co Ltd ３−５族化合物半導体
US6844574B1 (en) 1999-03-12 2005-01-18 Sumitomo Chemical Company, Limited III-V compound semiconductor
US6365511B1 (en) * 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
JP3846150B2 (ja) * 2000-03-27 2006-11-15 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP3668131B2 (ja) * 2000-12-28 2005-07-06 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP4932121B2 (ja) * 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
CN1209793C (zh) * 2002-10-16 2005-07-06 中国科学院半导体研究所 氮化镓及其化合物半导体的横向外延生长方法
JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7524691B2 (en) * 2003-01-20 2009-04-28 Panasonic Corporation Method of manufacturing group III nitride substrate
US7176115B2 (en) * 2003-03-20 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride substrate and semiconductor device
JP4588340B2 (ja) * 2003-03-20 2010-12-01 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
WO2005060007A1 (en) * 2003-08-05 2005-06-30 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
JP2005136200A (ja) * 2003-10-30 2005-05-26 Univ Nagoya 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材

Also Published As

Publication number Publication date
JP5371430B2 (ja) 2013-12-18
CN101218662B (zh) 2012-07-18
CN101218662A (zh) 2008-07-09
US20100096727A1 (en) 2010-04-22
KR101380717B1 (ko) 2014-04-02
DE102005041643A1 (de) 2007-03-01
EP1908099A1 (de) 2008-04-09
EP1908099B1 (de) 2011-07-27
KR20080047314A (ko) 2008-05-28
JP2009505938A (ja) 2009-02-12
WO2007025930A1 (de) 2007-03-08
US8591652B2 (en) 2013-11-26

Similar Documents

Publication Publication Date Title
PL1908099T3 (pl) Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej
GB0821002D0 (en) Compound semiconductor epitaxial substrate and method for producing the same
TWI368941B (en) Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
GB0906330D0 (en) Method for manufacturing semiconductor epitaxial crystal substrate
TWI318777B (en) Production method of compound semiconductor device wafer
PT3281939T (pt) Combinação contendo um cristal estável de compostos de 4-oxoquinolina
TWI319442B (en) Method of depositing thin layer using atomic layer deposition
TWI370488B (en) Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal
IL182754A0 (en) Method for the production of a substrate having a holographic appearance
TWI373106B (en) Microelectronic substrate including embedded components and spacer layer and method of forming same
GB0325748D0 (en) A method of forming a patterned layer on a substrate
PL1841579T3 (pl) Sposób do formowania i powlekania podłoża
GB0718024D0 (en) Method of forming organic compound layer process for producing organic e deviceand organic el device
PL2129815T3 (pl) Sposób wytwarzania materiału stanowiącego półprzewodnik złożony za pomocą epitaksji z fazy gazowej
DE602007011917D1 (de) Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat
TWI340183B (en) Method of manufacturing a substrate for growth of single crystal diamond
GB0616116D0 (en) A method of forming a component on a substrate
TWI347379B (en) Silicon wafer and method for producing same
GB0807974D0 (en) A Decorative element for a planting system and a method of forming a decorative element
EP1855312A4 (en) PROCESS FOR THE PRODUCTION OF A SIC-EINKRISTALLSUBSTRATS
GB0400982D0 (en) Method of forming a pattern on a substrate
EP2216428B8 (en) PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE
TWI370184B (en) Epitaxial wafer and method of producing same
GB0716234D0 (en) Method and apparatus for producing a coating of substrate
PL2322699T3 (pl) Sposób wytwarzania podłoży III-N i wolnych warstw III-N