PL1908099T3 - Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej - Google Patents
Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowejInfo
- Publication number
- PL1908099T3 PL1908099T3 PL06792997T PL06792997T PL1908099T3 PL 1908099 T3 PL1908099 T3 PL 1908099T3 PL 06792997 T PL06792997 T PL 06792997T PL 06792997 T PL06792997 T PL 06792997T PL 1908099 T3 PL1908099 T3 PL 1908099T3
- Authority
- PL
- Poland
- Prior art keywords
- semi
- conductor substrate
- hydride
- producing
- free
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
- H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/276—Lateral overgrowth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2904—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005041643A DE102005041643A1 (de) | 2005-08-29 | 2005-08-29 | Halbleitersubstrat sowie Verfahren und Maskenschicht zur Herstellung eines freistehenden Halbleitersubstrats mittels der Hydrid-Gasphasenepitaxie |
| PCT/EP2006/065659 WO2007025930A1 (de) | 2005-08-29 | 2006-08-24 | Halbleitersubstrat sowie verfahren und maskenschicht zur herstellung eines freistehenden halbleitersubstrats mittels der hydrid-gasphasenepitaxie |
| EP06792997A EP1908099B1 (de) | 2005-08-29 | 2006-08-24 | Halbleitersubstrat sowie verfahren und maskenschicht zur herstellung eines freistehenden halbleitersubstrats mittels der hydrid-gasphasenepitaxie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1908099T3 true PL1908099T3 (pl) | 2011-12-30 |
Family
ID=37460039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL06792997T PL1908099T3 (pl) | 2005-08-29 | 2006-08-24 | Podłoże półprzewodnikowe oraz sposób i warstwa maskująca do wytwarzania swobodnego podłoża półprzewodnikowego za pomocą wodorkowej epitaksji z fazy gazowej |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8591652B2 (pl) |
| EP (1) | EP1908099B1 (pl) |
| JP (1) | JP5371430B2 (pl) |
| KR (1) | KR101380717B1 (pl) |
| CN (1) | CN101218662B (pl) |
| DE (1) | DE102005041643A1 (pl) |
| PL (1) | PL1908099T3 (pl) |
| WO (1) | WO2007025930A1 (pl) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100025727A1 (en) * | 2008-08-04 | 2010-02-04 | Benjamin Allen Haskell | Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures |
| US20120094434A1 (en) * | 2008-08-04 | 2012-04-19 | Benjamin Allen Haskell | Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures |
| JP5095653B2 (ja) * | 2009-03-23 | 2012-12-12 | 日本電信電話株式会社 | 窒化物半導体構造 |
| JP2012054364A (ja) | 2010-08-31 | 2012-03-15 | Nobuyuki Akiyama | シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池 |
| KR101112118B1 (ko) * | 2010-09-24 | 2012-02-22 | 한국광기술원 | 자립형 ｉｉｉ족 질화물 기판의 제조방법 |
| WO2012056928A1 (ja) * | 2010-10-29 | 2012-05-03 | 株式会社トクヤマ | 光学素子の製造方法 |
| US9024310B2 (en) * | 2011-01-12 | 2015-05-05 | Tsinghua University | Epitaxial structure |
| JP5754191B2 (ja) * | 2011-03-18 | 2015-07-29 | 株式会社リコー | １３族窒化物結晶の製造方法および１３族窒化物結晶基板の製造方法 |
| JP5451796B2 (ja) * | 2012-03-06 | 2014-03-26 | 日本電信電話株式会社 | 窒化物半導体構造 |
| WO2013139888A1 (de) | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template |
| CN103367122B (zh) * | 2012-03-28 | 2016-03-30 | 清华大学 | 外延结构体的制备方法 |
| CN103367121B (zh) * | 2012-03-28 | 2016-04-13 | 清华大学 | 外延结构体的制备方法 |
| US9245747B2 (en) * | 2014-05-01 | 2016-01-26 | International Business Machines Corporation | Engineered base substrates for releasing III-V epitaxy through spalling |
| EP3180803A4 (en) * | 2014-08-13 | 2018-04-11 | Intel Corporation | Self-aligned gate last iii-n transistors |
| EP3298181A1 (de) * | 2015-05-21 | 2018-03-28 | EV Group E. Thallner GmbH | Verfahren zur aufbringung einer überwuchsschicht auf eine keimschicht |
| CN107093665B (zh) * | 2017-05-15 | 2019-07-09 | 中国电子科技集团公司第二十六研究所 | 一种压电薄膜换能器用WSiAlN薄膜及其制备方法 |
| CN111218643A (zh) * | 2020-01-19 | 2020-06-02 | 镓特半导体科技（上海）有限公司 | 自支撑氮化镓层及其制作方法 |
| JP7659909B2 (ja) * | 2020-06-19 | 2025-04-10 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半導体素子を実現するための移転プロセス |
| CN112820632B (zh) * | 2021-01-14 | 2024-01-09 | 镓特半导体科技（上海）有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
| CN112820634B (zh) * | 2021-01-14 | 2024-01-16 | 镓特半导体科技（上海）有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2002A (en) * | 1841-03-12 | Tor and planter for plowing | ||
| JPS5664475A (en) * | 1979-08-23 | 1981-06-01 | Unisearch Ltd | Solar battery with branching diode |
| US4868633A (en) * | 1986-10-22 | 1989-09-19 | Texas Instruments Incorporated | Selective epitaxy devices and method |
| US5675856A (en) * | 1996-06-14 | 1997-10-14 | Solid State Equipment Corp. | Wafer scrubbing device |
| DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| KR20010021496A (ko) * | 1997-07-03 | 2001-03-15 | 추후제출 | 에피택셜 필름의 결함 제거 방법 |
| FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
| TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
| JP2001135575A (ja) | 1999-03-12 | 2001-05-18 | Sumitomo Chem Co Ltd | ３−５族化合物半導体 |
| US6844574B1 (en) * | 1999-03-12 | 2005-01-18 | Sumitomo Chemical Company, Limited | III-V compound semiconductor |
| US6365511B1 (en) * | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
| EP1104031B1 (en) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
| JP3846150B2 (ja) * | 2000-03-27 | 2006-11-15 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法 |
| US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
| JP3668131B2 (ja) | 2000-12-28 | 2005-07-06 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
| JP4932121B2 (ja) * | 2002-03-26 | 2012-05-16 | 日本電気株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法 |
| CN1209793C (zh) * | 2002-10-16 | 2005-07-06 | 中国科学院半导体研究所 | 氮化镓及其化合物半导体的横向外延生长方法 |
| US7524691B2 (en) * | 2003-01-20 | 2009-04-28 | Panasonic Corporation | Method of manufacturing group III nitride substrate |
| JP4422473B2 (ja) * | 2003-01-20 | 2010-02-24 | パナソニック株式会社 | Ｉｉｉ族窒化物基板の製造方法 |
| JP4588340B2 (ja) | 2003-03-20 | 2010-12-01 | パナソニック株式会社 | Ｉｉｉ族窒化物基板の製造方法 |
| US7176115B2 (en) * | 2003-03-20 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride substrate and semiconductor device |
| WO2005060007A1 (en) * | 2003-08-05 | 2005-06-30 | Nitronex Corporation | Gallium nitride material transistors and methods associated with the same |
| JP2005136200A (ja) * | 2003-10-30 | 2005-05-26 | Univ Nagoya | 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材 |
-
2005
- 2005-08-29 DE DE102005041643A patent/DE102005041643A1/de not_active Withdrawn
-
2006
- 2006-08-24 WO PCT/EP2006/065659 patent/WO2007025930A1/de not_active Ceased
- 2006-08-24 JP JP2008528485A patent/JP5371430B2/ja not_active Expired - Fee Related
- 2006-08-24 US US11/996,446 patent/US8591652B2/en not_active Expired - Fee Related
- 2006-08-24 KR KR1020077029245A patent/KR101380717B1/ko not_active Expired - Fee Related
- 2006-08-24 EP EP06792997A patent/EP1908099B1/de not_active Ceased
- 2006-08-24 PL PL06792997T patent/PL1908099T3/pl unknown
- 2006-08-24 CN CN2006800230276A patent/CN101218662B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5371430B2 (ja) | 2013-12-18 |
| JP2009505938A (ja) | 2009-02-12 |
| US20100096727A1 (en) | 2010-04-22 |
| KR101380717B1 (ko) | 2014-04-02 |
| EP1908099B1 (de) | 2011-07-27 |
| CN101218662A (zh) | 2008-07-09 |
| DE102005041643A1 (de) | 2007-03-01 |
| US8591652B2 (en) | 2013-11-26 |
| KR20080047314A (ko) | 2008-05-28 |
| WO2007025930A1 (de) | 2007-03-08 |
| CN101218662B (zh) | 2012-07-18 |
| EP1908099A1 (de) | 2008-04-09 |
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