PL2089319T3 - Sposób oczyszczania krzemu metalurgicznego poprzez ukierunkowane krzepnięcie - Google Patents

Sposób oczyszczania krzemu metalurgicznego poprzez ukierunkowane krzepnięcie

Info

Publication number
PL2089319T3
PL2089319T3 PL07870238T PL07870238T PL2089319T3 PL 2089319 T3 PL2089319 T3 PL 2089319T3 PL 07870238 T PL07870238 T PL 07870238T PL 07870238 T PL07870238 T PL 07870238T PL 2089319 T3 PL2089319 T3 PL 2089319T3
Authority
PL
Poland
Prior art keywords
metallurgical silicon
purifying metallurgical
targeted solidification
solidification
targeted
Prior art date
Application number
PL07870238T
Other languages
English (en)
Inventor
Florence Servant
Denis Camel
Béatrice Drevet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of PL2089319T3 publication Critical patent/PL2089319T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL07870238T 2006-11-02 2007-11-02 Sposób oczyszczania krzemu metalurgicznego poprzez ukierunkowane krzepnięcie PL2089319T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0609584A FR2908125B1 (fr) 2006-11-02 2006-11-02 Procede de purification de silicium metallurgique par solidification dirigee
EP07870238.8A EP2089319B1 (fr) 2006-11-02 2007-11-02 Procede de purification de silicium metallurgique par solidification dirigee
PCT/FR2007/001818 WO2008065270A2 (fr) 2006-11-02 2007-11-02 Procede de purification de silicium metallurgique par solidification dirigee

Publications (1)

Publication Number Publication Date
PL2089319T3 true PL2089319T3 (pl) 2014-01-31

Family

ID=37735803

Family Applications (1)

Application Number Title Priority Date Filing Date
PL07870238T PL2089319T3 (pl) 2006-11-02 2007-11-02 Sposób oczyszczania krzemu metalurgicznego poprzez ukierunkowane krzepnięcie

Country Status (7)

Country Link
US (1) US7799306B2 (pl)
EP (1) EP2089319B1 (pl)
JP (1) JP5496674B2 (pl)
ES (1) ES2432573T3 (pl)
FR (1) FR2908125B1 (pl)
PL (1) PL2089319T3 (pl)
WO (1) WO2008065270A2 (pl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2172424A4 (en) * 2007-06-08 2012-03-07 Shinetsu Chemical Co METHOD FOR FIXING METALLIC SILICON
FR2940806B1 (fr) * 2009-01-05 2011-04-08 Commissariat Energie Atomique Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
CN102362016B (zh) 2009-01-30 2014-10-22 Amg艾迪卡斯特太阳能公司 晶种层和晶种层的制造方法
NO2478135T3 (pl) * 2009-09-18 2018-04-14
CN102206857A (zh) * 2011-04-30 2011-10-05 常州天合光能有限公司 111晶向铸锭硅单晶及其制备方法
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
US8713966B2 (en) 2011-11-30 2014-05-06 Corning Incorporated Refractory vessels and methods for forming same
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
JP6095060B2 (ja) * 2013-04-15 2017-03-15 国立大学法人東北大学 Ｓｉ多結晶インゴットの製造方法
CN103924294A (zh) * 2014-04-29 2014-07-16 南通综艺新材料有限公司 一种多晶硅及其制备方法
CN106591947A (zh) * 2017-01-12 2017-04-26 南通大学 一种缓冲式多晶硅籽晶铸锭熔化结晶工艺
CN106591936B (zh) * 2017-01-12 2019-07-16 南通大学 一种凹陷式类单晶硅籽晶熔化控制的装料方法
CN106591937B (zh) * 2017-01-12 2019-11-26 南通大学 一种凹陷式类单晶籽晶铸锭熔化结晶工艺
CN113584586B (zh) * 2021-08-06 2024-04-26 宁夏红日东升新能源材料有限公司 一种多晶硅离心定向凝固提纯方法与装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA605440A (en) * 1955-11-03 1960-09-20 E. Pardue Turner Semiconductor devices and methods of making the same
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
JPH07309614A (ja) * 1994-03-24 1995-11-28 Kawasaki Steel Corp シリコンの精製方法
JP3242292B2 (ja) * 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
JPH107493A (ja) * 1996-06-20 1998-01-13 Sharp Corp シリコン半導体基板および太陽電池用基板の製造方法
JP3852147B2 (ja) * 1996-12-27 2006-11-29 Ｊｆｅスチール株式会社 太陽電池用多結晶シリコン・インゴットの製造方法
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
FR2827592B1 (fr) 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
WO2005061383A1 (en) * 2003-12-04 2005-07-07 Dow Corning Corporation Method of removing impurities from metallurgical grade silicon to produce solar grade silicon
JP2008506621A (ja) * 2004-07-16 2008-03-06 インスティチュート フォー エネルギーテックニック 半導体級（ｓｅｇ）シリコンを連続生産するための方法およびリアクタ

Also Published As

Publication number Publication date
ES2432573T3 (es) 2013-12-04
US20100003183A1 (en) 2010-01-07
EP2089319B1 (fr) 2013-07-31
US7799306B2 (en) 2010-09-21
EP2089319A2 (fr) 2009-08-19
WO2008065270A3 (fr) 2008-07-24
WO2008065270A2 (fr) 2008-06-05
FR2908125B1 (fr) 2009-11-20
JP5496674B2 (ja) 2014-05-21
JP2010508237A (ja) 2010-03-18
FR2908125A1 (fr) 2008-05-09

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