PL2174350T3 - Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich - Google Patents

Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich

Info

Publication number
PL2174350T3
PL2174350T3 PL08786603T PL08786603T PL2174350T3 PL 2174350 T3 PL2174350 T3 PL 2174350T3 PL 08786603 T PL08786603 T PL 08786603T PL 08786603 T PL08786603 T PL 08786603T PL 2174350 T3 PL2174350 T3 PL 2174350T3
Authority
PL
Poland
Prior art keywords
semiconductor element
power
controlling
high currents
power semiconductor
Prior art date
Application number
PL08786603T
Other languages
English (en)
Inventor
Gernot Schimetta
Norbert Seliger
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of PL2174350T3 publication Critical patent/PL2174350T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
PL08786603T 2007-08-01 2008-07-30 Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich PL2174350T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE200710036048 DE102007036048A1 (de) 2007-08-01 2007-08-01 Anordnung mit zumindest einem Halbleiterbauelement, insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme
PCT/EP2008/059968 WO2009016192A2 (de) 2007-08-01 2008-07-30 Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme
EP20080786603 EP2174350B1 (de) 2007-08-01 2008-07-30 Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme

Publications (1)

Publication Number Publication Date
PL2174350T3 true PL2174350T3 (pl) 2013-01-31

Family

ID=40175762

Family Applications (1)

Application Number Title Priority Date Filing Date
PL08786603T PL2174350T3 (pl) 2007-08-01 2008-07-30 Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich

Country Status (6)

Country Link
EP (2) EP2290688A3 (pl)
CN (1) CN101809741B (pl)
DE (1) DE102007036048A1 (pl)
ES (1) ES2392206T3 (pl)
PL (1) PL2174350T3 (pl)
WO (1) WO2009016192A2 (pl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014201631B4 (de) * 2014-01-30 2022-02-03 Robert Bosch Gmbh Anordnung zum Kontaktieren elektrischer Komponenten
JP6912560B2 (ja) * 2017-04-19 2021-08-04 三菱電機株式会社 半導体モジュールおよび電力変換装置
EP3392908B1 (de) * 2017-04-20 2019-07-24 Infineon Technologies AG Leistungshalbleiteranordnung mit einem stapel von eine verbesserte geometrie aufweisenden anschlussplatten zur gemeinsamen elektrischen kontaktierungen mehrerer, gleichartiger leistungshalbleiter-schaltelemente
DE102017217352A1 (de) * 2017-09-28 2019-03-28 Danfoss Silicon Power Gmbh Stromschiene und leistungsmodul

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
JPH0661289A (ja) * 1992-08-07 1994-03-04 Mitsubishi Electric Corp 半導体パッケージ及びこれを用いた半導体モジュール
US5313091A (en) * 1992-09-28 1994-05-17 Sundstrand Corporation Package for a high power electrical component
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
US5504378A (en) * 1994-06-10 1996-04-02 Westinghouse Electric Corp. Direct cooled switching module for electric vehicle propulsion system
EP0828341B1 (en) * 1996-09-06 2003-12-03 Hitachi, Ltd. Modular type power semiconductor apparatus
ATE311017T1 (de) 2001-09-28 2005-12-15 Siemens Ag Anordnung mit leistungshalbleiterbauelementen zur leistungssteuerung hoher ströme und anwendung der anordnung
CN1575511A (zh) * 2001-09-28 2005-02-02 西门子公司 用于接触基片的电接触面的方法和由具有电接触面的基片形成的装置
JP4566678B2 (ja) * 2004-10-04 2010-10-20 日立オートモティブシステムズ株式会社 パワーモジュール

Also Published As

Publication number Publication date
EP2290688A2 (de) 2011-03-02
CN101809741B (zh) 2013-05-22
EP2290688A3 (de) 2011-10-26
WO2009016192A2 (de) 2009-02-05
EP2174350B1 (de) 2012-08-29
CN101809741A (zh) 2010-08-18
ES2392206T3 (es) 2012-12-05
EP2174350A2 (de) 2010-04-14
WO2009016192A3 (de) 2009-07-09
DE102007036048A1 (de) 2009-02-05

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PL2174350T3 (pl) Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich