PL2416629T3 - Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości - Google Patents

Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości

Info

Publication number
PL2416629T3
PL2416629T3 PL10806266T PL10806266T PL2416629T3 PL 2416629 T3 PL2416629 T3 PL 2416629T3 PL 10806266 T PL10806266 T PL 10806266T PL 10806266 T PL10806266 T PL 10806266T PL 2416629 T3 PL2416629 T3 PL 2416629T3
Authority
PL
Poland
Prior art keywords
pulse
frequency power
modulated high
control method
source device
Prior art date
Application number
PL10806266T
Other languages
English (en)
Inventor
Itsuo Yuzurihara
Yoshihisa Hata
Original Assignee
Kyosan Electric Mfg. Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg. Co., Ltd. filed Critical Kyosan Electric Mfg. Co., Ltd.
Publication of PL2416629T3 publication Critical patent/PL2416629T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K7/00—Modulating pulses with a continuously-variable modulating signal
    • H03K7/08—Duration or width modulation ; Duty cycle modulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K7/00—Modulating pulses with a continuously-variable modulating signal
    • H03K7/10—Combined modulation, e.g. rate modulation and amplitude modulation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/007—Plural converter units in cascade
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Dc-Dc Converters (AREA)
PL10806266T 2009-08-07 2010-03-05 Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości PL2416629T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009184411 2009-08-07
PCT/JP2010/053610 WO2011016266A1 (ja) 2009-08-07 2010-03-05 パルス変調高周波電力制御方法およびパルス変調高周波電源装置
EP10806266.2A EP2416629B1 (en) 2009-08-07 2010-03-05 Pulse-modulated high-frequency power control method and pulse-modulated high-frequency power source device

Publications (1)

Publication Number Publication Date
PL2416629T3 true PL2416629T3 (pl) 2021-11-02

Family

ID=43525307

Family Applications (2)

Application Number Title Priority Date Filing Date
PL10806266T PL2416629T3 (pl) 2009-08-07 2010-03-05 Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości
PL391792A PL391792A1 (pl) 2009-08-07 2010-07-09 Sposób sterowania mocą RF modulowaną impulsowo i urządzenie dostarczające moc RF modulowaną impulsowo

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL391792A PL391792A1 (pl) 2009-08-07 2010-07-09 Sposób sterowania mocą RF modulowaną impulsowo i urządzenie dostarczające moc RF modulowaną impulsowo

Country Status (10)

Country Link
US (1) US8704607B2 (pl)
EP (1) EP2416629B1 (pl)
JP (1) JP4932942B2 (pl)
KR (1) KR101322539B1 (pl)
CN (1) CN102474971B (pl)
DE (1) DE102010015071B4 (pl)
PL (2) PL2416629T3 (pl)
SG (1) SG175695A1 (pl)
TW (1) TWI475802B (pl)
WO (1) WO2011016266A1 (pl)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8659335B2 (en) * 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
CN102498410B (zh) * 2009-09-17 2016-03-23 皇家飞利浦电子股份有限公司 具有局部自动调谐和匹配装置的多元件发射rf链
TWI581304B (zh) 2011-07-27 2017-05-01 日立全球先端科技股份有限公司 Plasma etching apparatus and dry etching method
AU2012299019B2 (en) * 2011-08-22 2016-11-24 Franklin Electric Company, Inc. Power conversion system
US8773019B2 (en) * 2012-02-23 2014-07-08 Mks Instruments, Inc. Feedback control and coherency of multiple power supplies in radio frequency power delivery systems for pulsed mode schemes in thin film processing
JP5959275B2 (ja) * 2012-04-02 2016-08-02 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5534365B2 (ja) * 2012-06-18 2014-06-25 株式会社京三製作所 高周波電力供給装置、及び反射波電力制御方法
US9408288B2 (en) * 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
CN103730316B (zh) * 2012-10-16 2016-04-06 中微半导体设备(上海)有限公司 一种等离子处理方法及等离子处理装置
US8736377B2 (en) * 2012-10-30 2014-05-27 Mks Instruments, Inc. RF pulse edge shaping
EP2928270A4 (en) * 2012-11-30 2016-06-22 Imagineering Inc PLASMA GENERATION DEVICE
CN103943448B (zh) * 2013-01-17 2016-06-08 中微半导体设备(上海)有限公司 一种等离子处理装置的等离子处理方法
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
DE102013205936B4 (de) * 2013-04-04 2016-07-14 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Regelung einer Regelstrecke mit normierter Auswahlgröße
CN103281278B (zh) * 2013-04-24 2017-03-22 东莞宇龙通信科技有限公司 Lte通信发射系统、接收系统及通信终端
JP6153786B2 (ja) * 2013-06-28 2017-06-28 株式会社ダイヘン 高周波電源装置
KR101768827B1 (ko) * 2013-08-26 2017-08-17 가부시키가이샤 히다치 고쿠사이 덴키 플라즈마 생성용 전원 장치 및 플라즈마 생성용 전원 공급 방법
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
JP6374647B2 (ja) * 2013-11-05 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP5850581B2 (ja) 2013-11-29 2016-02-03 株式会社京三製作所 プラズマ未着火状態判別装置およびプラズマ未着火判別方法
JP5704772B1 (ja) * 2014-02-04 2015-04-22 株式会社京三製作所 高周波電源装置およびプラズマ着火方法
DE102014212439A1 (de) * 2014-06-27 2015-12-31 TRUMPF Hüttinger GmbH + Co. KG Verfahren zum Betrieb eines Leistungsgenerators und Leistungsgenerator
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US9386680B2 (en) * 2014-09-25 2016-07-05 Applied Materials, Inc. Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
TWI559123B (zh) * 2015-04-15 2016-11-21 群光電能科技股份有限公司 脈衝間歇模式電源供應方法及脈衝間歇模式電源供應裝置
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US9925888B2 (en) * 2016-03-02 2018-03-27 Ford Global Technologies, Llc Battery cell state of charge initialization in a presence of voltage measurement uncertainty
JP6157036B1 (ja) * 2016-07-08 2017-07-05 株式会社京三製作所 高周波電源装置、及び高周波電源装置の制御方法
KR102088602B1 (ko) * 2016-09-28 2020-03-12 가부시키가이샤 히다치 고쿠사이 덴키 고주파 전원 장치
CN110050394B (zh) * 2016-12-09 2021-01-12 古河电气工业株式会社 脉冲激光装置、加工装置及脉冲激光装置的控制方法
JP6858095B2 (ja) * 2017-08-18 2021-04-14 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
KR20190037740A (ko) * 2017-09-29 2019-04-08 엘지전자 주식회사 해충 퇴치 장치 및 이동 단말기
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US20200185196A1 (en) * 2018-12-07 2020-06-11 Advanced Micro-Fabrication Equipment Inc. China Method and device for matching impedance of pulse radio frequency plasma
KR102827481B1 (ko) 2019-01-22 2025-06-30 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7423233B2 (ja) * 2019-09-26 2024-01-29 株式会社ダイヘン 高周波電源装置及び高周波電力の出力方法
US11482402B2 (en) * 2019-12-18 2022-10-25 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN111327211B (zh) * 2020-02-14 2024-03-19 中国电子科技集团公司第十四研究所 一种用于脉冲负载的电源功率波动控制方法和系统
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11328902B1 (en) 2021-06-09 2022-05-10 XP Power Limited Radio frequency generator providing complex RF pulse pattern
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JP7418389B2 (ja) * 2021-12-28 2024-01-19 株式会社京三製作所 高周波電源
CN114384962B (zh) * 2022-01-21 2023-06-30 长沙锐逸微电子有限公司 一种恒功率输出算法和控制芯片
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
KR20250125389A (ko) * 2022-12-14 2025-08-21 램 리써치 코포레이션 선택도를 증가시키기 위해 lf rf 펄스 생성기를 제어하기 위한 시스템 및 방법
CN119631166A (zh) * 2023-07-12 2025-03-14 株式会社日立高新技术 等离子体处理装置及等离子体处理方法
CN117690280A (zh) * 2023-11-27 2024-03-12 凌思微电子(杭州)有限公司 一种灵活的红外协议调制方法及遥控终端
CN118920643A (zh) * 2024-07-25 2024-11-08 深圳技术大学 一种面向脉冲充电法的充电负荷管理方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
JPS59216845A (ja) 1983-05-25 1984-12-06 Sumitomo Chem Co Ltd 光学活性シクロペンテノロン類の製造方法
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JP2931641B2 (ja) 1990-07-06 1999-08-09 東京エレクトロン株式会社 熱処理装置
JPH07335560A (ja) * 1994-06-07 1995-12-22 Nec Corp アモルファスシリコン膜の形成方法及び薄膜トランジスタ素子
JP3444013B2 (ja) * 1994-08-10 2003-09-08 日新電機株式会社 強誘電体膜形成方法及び装置
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6255635B1 (en) * 1998-07-10 2001-07-03 Ameritherm, Inc. System and method for providing RF power to a load
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
JP2001032077A (ja) * 1999-07-19 2001-02-06 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ製膜方法
JP3705977B2 (ja) * 1999-12-03 2005-10-12 松下電器産業株式会社 ゲート電極の形成方法
US6472822B1 (en) * 2000-04-28 2002-10-29 Applied Materials, Inc. Pulsed RF power delivery for plasma processing
US6459067B1 (en) * 2001-04-06 2002-10-01 Eni Technology, Inc. Pulsing intelligent RF modulation controller
JP2003173757A (ja) * 2001-12-04 2003-06-20 Nissin Electric Co Ltd イオンビーム照射装置
US6570777B1 (en) * 2001-12-06 2003-05-27 Eni Technology, Inc. Half sine wave resonant drive circuit
US6586887B1 (en) * 2002-03-06 2003-07-01 Hitachi High-Technologies Corporation High-frequency power supply apparatus for plasma generation apparatus
TW521541B (en) * 2002-03-07 2003-02-21 Hitachi High Tech Corp High-frequency power device for plasma generating apparatus
JP3927464B2 (ja) * 2002-04-26 2007-06-06 株式会社日立ハイテクノロジーズ プラズマ処理方法
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP4065820B2 (ja) 2003-08-28 2008-03-26 オリジン電気株式会社 スパッタリング装置
US7115185B1 (en) * 2003-09-16 2006-10-03 Advanced Energy Industries, Inc. Pulsed excitation of inductively coupled plasma sources
JP4875335B2 (ja) 2005-09-26 2012-02-15 株式会社ダイヘン 高周波電源装置および高周波電源の制御方法
JP2007185845A (ja) * 2006-01-12 2007-07-26 Sumitomo Heavy Ind Ltd 可塑化装置及びその制御方法
KR100710509B1 (ko) * 2006-04-11 2007-04-25 남상욱 펄스면적변조를 이용한 고효율 선형 전력증폭기 시스템
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP5038095B2 (ja) 2007-11-01 2012-10-03 株式会社ダイヘン 高周波電源装置およびその制御方法
JP4454037B2 (ja) * 2007-12-28 2010-04-21 富士夫 堀 造粒装置
JP2009301820A (ja) * 2008-06-12 2009-12-24 Nagano Japan Radio Co プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
DE102010015071A1 (de) 2011-03-03
US20110032047A1 (en) 2011-02-10
KR20120023603A (ko) 2012-03-13
US8704607B2 (en) 2014-04-22
PL391792A1 (pl) 2011-02-14
TW201114174A (en) 2011-04-16
TWI475802B (zh) 2015-03-01
EP2416629A4 (en) 2014-03-05
SG175695A1 (en) 2011-12-29
EP2416629A1 (en) 2012-02-08
CN102474971B (zh) 2015-03-04
EP2416629B1 (en) 2021-04-21
WO2011016266A1 (ja) 2011-02-10
JP4932942B2 (ja) 2012-05-16
DE102010015071B4 (de) 2020-04-30
CN102474971A (zh) 2012-05-23
JPWO2011016266A1 (ja) 2013-01-10
KR101322539B1 (ko) 2013-10-28

Similar Documents

Publication Publication Date Title
PL2416629T3 (pl) Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości
EP2499505B8 (en) Device and method for controlling energy
PL2521279T3 (pl) Sposób i urządzenie do sterowania mocą
EP2592428A4 (en) Power control device and power control method
PL2833703T3 (pl) Urządzenie zasilające wysokiej częstotliwości i sposób sterowania mocą fali odbitej
EP2416082A4 (en) Heat source system and control method therefor
EP2670015A4 (en) POWER CONTROL DEVICE AND POWER CONTROL METHOD
IL218848A0 (en) Anti-bolus control method and corresponding device
EP2399420A4 (en) METHOD AND DEVICE FOR TRANSMITTING POWER CONTROL
EP2443693A4 (en) METHOD AND DEVICE FOR CONTROLLING THE HEATING OF A BATTERY
EP2510729A4 (en) ENERGY CONTROL SYSTEM AND METHOD
EP2566315A4 (en) Integrated control device and integrated control method
GB2482057B (en) Operation device and control method thereof
EP2660860B8 (en) Work heating device and work treatment device
EP2433582A4 (en) RF TREATMENT DEVICE
GB2511448B (en) Power transmission device and power transmission control method
EP2587609A4 (en) Power supply device and method
EP2649953A4 (en) Ultrasound treatment device and control method thereof
EP2472708A4 (en) Power conversion device and control method therefor
EP2537556A4 (en) CONTROL FOR A RADIO THERAPY DEVICE AND METHOD FOR OPERATING A RADIO THERAPY DEVICE
EP2618498A4 (en) Method and device for obtaining transmission power control command
EP2509182A4 (en) METHOD AND DEVICE FOR CONTROLLING POWER
EP2623015A4 (en) ENDOSCOPE DEVICE AND METHOD FOR CONTROLLING THEIR OPERATION
EP2659932A4 (en) Treatment device and method for operating same
EP2530819A4 (en) Control circuit and control method for power conversion device