PL3125302T3 - Ogniwo słoneczne - Google Patents

Ogniwo słoneczne

Info

Publication number
PL3125302T3
PL3125302T3 PL16181439.7T PL16181439T PL3125302T3 PL 3125302 T3 PL3125302 T3 PL 3125302T3 PL 16181439 T PL16181439 T PL 16181439T PL 3125302 T3 PL3125302 T3 PL 3125302T3
Authority
PL
Poland
Prior art keywords
solar cell
solar
cell
Prior art date
Application number
PL16181439.7T
Other languages
English (en)
Inventor
Jeongbeom Nam
Seunghwan Shim
Jisoo KO
Original Assignee
Shangrao Jinko Solar Technology Development Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160090036A external-priority patent/KR102634626B1/ko
Application filed by Shangrao Jinko Solar Technology Development Co., Ltd filed Critical Shangrao Jinko Solar Technology Development Co., Ltd
Publication of PL3125302T3 publication Critical patent/PL3125302T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219Arrangements for electrodes of back-contact photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/122Active materials comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • H10F77/935Interconnections for devices having potential barriers for photovoltaic devices or modules
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
PL16181439.7T 2015-07-27 2016-07-27 Ogniwo słoneczne PL3125302T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20150105964 2015-07-27
KR1020160090036A KR102634626B1 (ko) 2015-07-27 2016-07-15 태양 전지

Publications (1)

Publication Number Publication Date
PL3125302T3 true PL3125302T3 (pl) 2023-03-06

Family

ID=56551267

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16181439.7T PL3125302T3 (pl) 2015-07-27 2016-07-27 Ogniwo słoneczne

Country Status (7)

Country Link
US (2) US10217877B2 (pl)
EP (1) EP3125302B1 (pl)
JP (1) JP6396374B2 (pl)
KR (1) KR20240017894A (pl)
CN (1) CN106409928B (pl)
ES (1) ES2936389T3 (pl)
PL (1) PL3125302T3 (pl)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10477105B2 (en) * 2017-06-08 2019-11-12 Futurewei Technologies, Inc. Method and system for transmitting virtual reality (VR) content
JP6741626B2 (ja) * 2017-06-26 2020-08-19 信越化学工業株式会社 高効率裏面電極型太陽電池及びその製造方法
KR102374145B1 (ko) * 2017-08-21 2022-03-15 엘지전자 주식회사 태양 전지 패널
WO2019205494A1 (zh) * 2018-04-27 2019-10-31 北京铂阳顶荣光伏科技有限公司 导电电极膜层和光伏元件
KR102600380B1 (ko) * 2018-12-05 2023-11-09 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법, 그리고 태양 전지 패널
US10680354B1 (en) * 2019-03-14 2020-06-09 Antaya Technologies Corporation Electrically conductive connector
JP2021027401A (ja) * 2019-07-31 2021-02-22 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
KR20210103850A (ko) 2020-02-14 2021-08-24 엘지전자 주식회사 태양 전지, 그리고 태양 전지 패널 및 이의 제조 방법
RU198378U1 (ru) * 2020-02-28 2020-07-02 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Концентраторный солнечный элемент
EP3989294A1 (en) * 2020-10-22 2022-04-27 Meyer Burger (Germany) GmbH Photovoltaic device and method for manufacturing the same
CN115132860B (zh) * 2021-03-24 2023-09-15 泰州隆基乐叶光伏科技有限公司 太阳能电池生产方法及太阳能电池
CN113629155B (zh) * 2021-08-06 2023-03-24 常州时创能源股份有限公司 一种晶硅太阳能电池
CN115207159A (zh) * 2022-07-07 2022-10-18 隆基绿能科技股份有限公司 太阳能电池制备方法、太阳能电池及电池组件
WO2024008183A1 (zh) * 2022-07-07 2024-01-11 隆基绿能科技股份有限公司 太阳能电池制备方法、太阳能电池及电池组件
CN115064610A (zh) * 2022-07-07 2022-09-16 隆基绿能科技股份有限公司 太阳能电池制备方法、太阳能电池及电池组件
CN115832065B (zh) * 2022-11-29 2025-03-07 隆基绿能科技股份有限公司 一种背接触电池及其制造方法、光伏组件
CN115881835B (zh) 2023-02-08 2024-05-14 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件
CN117954512A (zh) 2023-10-09 2024-04-30 晶科能源(海宁)有限公司 太阳能电池及光伏组件
WO2025129846A1 (zh) * 2023-12-22 2025-06-26 浙江爱旭太阳能科技有限公司 背接触太阳能电池、电池组件和光伏系统

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
JP2006324590A (ja) 2005-05-20 2006-11-30 Sharp Corp 裏面電極型太陽電池とその製造方法
US7763535B2 (en) * 2007-08-30 2010-07-27 Applied Materials, Inc. Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell
KR101661358B1 (ko) 2010-01-05 2016-09-29 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101661768B1 (ko) 2010-09-03 2016-09-30 엘지전자 주식회사 태양전지 및 이의 제조 방법
US9773928B2 (en) * 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US20120234593A1 (en) * 2011-03-18 2012-09-20 Applied Materials, Inc. Conductive foils having multiple layers and methods of forming same
CN103733352A (zh) 2011-06-13 2014-04-16 Posco公司 太阳能电池基板和使用所述基板的太阳能电池
JP2013012606A (ja) 2011-06-29 2013-01-17 Sanyo Electric Co Ltd 太陽電池及びその製造方法
DE102012205375A1 (de) 2012-04-02 2013-10-02 Robert Bosch Gmbh Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module
US9293624B2 (en) * 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
US9419181B2 (en) * 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
KR101622090B1 (ko) 2013-11-08 2016-05-18 엘지전자 주식회사 태양 전지
KR101867855B1 (ko) 2014-03-17 2018-06-15 엘지전자 주식회사 태양 전지
US20160380126A1 (en) * 2015-06-25 2016-12-29 David Aaron Randolph Barkhouse Multi-layer barrier for metallization

Also Published As

Publication number Publication date
US10879405B2 (en) 2020-12-29
EP3125302A1 (en) 2017-02-01
KR20240017894A (ko) 2024-02-08
EP3125302B1 (en) 2022-11-09
US10217877B2 (en) 2019-02-26
US20170033242A1 (en) 2017-02-02
CN106409928B (zh) 2019-01-15
JP2017028292A (ja) 2017-02-02
ES2936389T3 (es) 2023-03-16
JP6396374B2 (ja) 2018-09-26
CN106409928A (zh) 2017-02-15
US20190157474A1 (en) 2019-05-23

Similar Documents

Publication Publication Date Title
ZA201707334B (en) Cell
PL3125302T3 (pl) Ogniwo słoneczne
GB201507368D0 (en) Cell
GB201503500D0 (en) Cell
GB201518817D0 (en) Cell
GB201514874D0 (en) Cell
EP3125323A4 (en) Solar cell
GB201610515D0 (en) Cell
GB201522097D0 (en) Cells
GB201621889D0 (en) Cell
PT3826075T (pt) Módulo de célula solar
EP3163630C0 (en) SOLAR CELL MODULE
EP3208860A4 (en) Solar cell
EP3276694A4 (en) Solar cell
EP3208858A4 (en) Solar cell
GB201603372D0 (en) Cell
EP3273496A4 (en) Solar cell
HUP1400380A2 (hu) Napelem cella elrendezés
EP3331041A4 (en) Solar cell
HRP20171417B8 (hr) Fotonaponska solarna ćelija
HUE047530T2 (hu) Napelem
GB201609604D0 (en) Cell
GB201617716D0 (en) Cell
GB201504291D0 (en) PV cells
EP3208859A4 (en) Solar cell