PL3195372T3 - Sposób formułowania perowskitowych materiałów ogniw słonecznych - Google Patents

Sposób formułowania perowskitowych materiałów ogniw słonecznych

Info

Publication number
PL3195372T3
PL3195372T3 PL15828193T PL15828193T PL3195372T3 PL 3195372 T3 PL3195372 T3 PL 3195372T3 PL 15828193 T PL15828193 T PL 15828193T PL 15828193 T PL15828193 T PL 15828193T PL 3195372 T3 PL3195372 T3 PL 3195372T3
Authority
PL
Poland
Prior art keywords
solar cell
perovskite solar
cell materials
formulating
formulating perovskite
Prior art date
Application number
PL15828193T
Other languages
English (en)
Inventor
Michael D. Irwin
Jerred A. Chute
Vivek V. Dhas
Original Assignee
Hee Solar, L.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hee Solar, L.L.C. filed Critical Hee Solar, L.L.C.
Publication of PL3195372T3 publication Critical patent/PL3195372T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/19—Monitoring patterns of pulse trains
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electroluminescent Light Sources (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
PL15828193T 2014-08-01 2015-07-30 Sposób formułowania perowskitowych materiałów ogniw słonecznych PL3195372T3 (pl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462032137P 2014-08-01 2014-08-01
US14/711,330 US9305715B2 (en) 2014-08-01 2015-05-13 Method of formulating perovskite solar cell materials
PCT/US2015/042864 WO2016019124A1 (en) 2014-08-01 2015-07-30 Method of formulating perovskite solar cell materials
EP15828193.1A EP3195372B1 (en) 2014-08-01 2015-07-30 Method of formulating perovskite solar cell materials

Publications (1)

Publication Number Publication Date
PL3195372T3 true PL3195372T3 (pl) 2019-12-31

Family

ID=55180744

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15828193T PL3195372T3 (pl) 2014-08-01 2015-07-30 Sposób formułowania perowskitowych materiałów ogniw słonecznych

Country Status (12)

Country Link
US (6) US9305715B2 (pl)
EP (2) EP3576173A3 (pl)
JP (2) JP6301548B2 (pl)
KR (8) KR102410984B1 (pl)
CN (2) CN107078219B (pl)
AU (6) AU2015296288B2 (pl)
BR (1) BR112017002107B1 (pl)
CA (4) CA2956633C (pl)
ES (1) ES2748700T3 (pl)
MX (2) MX369793B (pl)
PL (1) PL3195372T3 (pl)
WO (1) WO2016019124A1 (pl)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416279B2 (en) 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
EP3136450B1 (en) * 2014-04-28 2021-06-09 Research & Business Foundation Sungkyunkwan University Perovskite solar cell and manufacturing method therefor
US9305715B2 (en) * 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials
TWI553892B (zh) * 2015-12-31 2016-10-11 台灣中油股份有限公司 具鈣鈦礦施體層之太陽能電池模組
CN105609635B (zh) * 2016-03-17 2018-05-15 东华大学 一种在空气中制备高结晶度钙钛矿薄膜的方法
US20190058135A1 (en) * 2016-05-27 2019-02-21 The Florida State University Research Foundation, Inc. Perovskite based charge transport layers for thin film optoelecronic devices and methods of making
US10332688B2 (en) 2016-06-29 2019-06-25 Alliance For Sustainable Energy, Llc Methods for making perovskite solar cells having improved hole-transport layers
DE102017005884A1 (de) 2016-07-07 2018-01-11 Merck Patent Gmbh Elektronisches Schaltelement
US9880458B1 (en) * 2017-04-17 2018-01-30 Hee Solar, L.L.C. Hybrid perovskite material processing
CN110537153A (zh) 2017-04-20 2019-12-03 惠普发展公司，有限责任合伙企业 设备天线
US11205735B2 (en) 2017-05-05 2021-12-21 Universidad De Antioquia Low temperature p-i-n hybrid mesoporous optoelectronic device
US11316484B2 (en) * 2017-05-25 2022-04-26 Boise State University Optically gated transistor selector for variable resistive memory device
US10700226B2 (en) * 2017-05-25 2020-06-30 Boise State University Optically activated transistor, switch, and photodiode
GB201709562D0 (en) * 2017-06-15 2017-08-02 Grafmarine Power distrubution and cell storage apparatus
CN107474632A (zh) * 2017-08-25 2017-12-15 深圳市华星光电半导体显示技术有限公司 喷墨打印用钙钛矿墨水及其制备方法
US11174276B2 (en) * 2017-09-06 2021-11-16 Alliance For Sustainable Energy, Llc Organic-inorganic perovskite materials and methods of making the same
CN109065723A (zh) * 2018-07-13 2018-12-21 华中科技大学 一种基于添加剂提升太阳能电池开路电压的方法
US10907050B2 (en) 2018-11-21 2021-02-02 Hee Solar, L.L.C. Nickel oxide sol-gel ink
CN111362808A (zh) * 2018-12-26 2020-07-03 东泰高科装备科技有限公司 钙钛矿薄膜的制备方法及太阳能电池
KR102958206B1 (ko) * 2019-05-30 2026-04-29 에너지 머티리얼즈 코퍼레이션 고속으로 페로브스카이트 층을 제조하는 방법
US20210088823A1 (en) * 2019-09-25 2021-03-25 Novatek Microelectronics Corp. Fingerprint recognition apparatus
CN111312906B (zh) * 2020-02-28 2023-08-15 陕西师范大学 一种无机钙钛矿太阳电池及其制备方法
CN111525034B (zh) * 2020-04-27 2022-03-15 电子科技大学 一种高效稳定的混合维度钙钛矿太阳能电池的制备方法
GB202008192D0 (en) * 2020-06-01 2020-07-15 Grafmarine Power generation and storage apparatus
KR102347937B1 (ko) * 2020-06-02 2022-01-07 한국원자력연구원 2차원 페로브스카이트 박막의 제조 방법 및 2차원 페로브스카이트 박막
AU2021347825B2 (en) 2020-09-22 2024-11-07 Caelux Corporation Methods and devices for integrated tandem solar module fabrication
CN112186110B (zh) * 2020-09-28 2022-11-25 中山大学 一种有机无机杂化钙钛矿甲基胺碘化铅表面原位生长有机钝化膜的制备方法
KR102496956B1 (ko) * 2020-10-28 2023-02-06 포항공과대학교 산학협력단 박막 트랜지스터 및 이의 제조 방법
CN117322155A (zh) * 2021-05-21 2023-12-29 松下控股株式会社 太阳能电池及太阳能电池的制造方法
EP4351874A4 (en) 2021-05-26 2025-04-23 Massachusetts Institute Of Technology Rapid fabrication of semiconductor thin films
IL318736A (en) 2021-06-16 2025-03-01 Conti Innovation Center Llc Mechanically stacked solar transmissive cells or modules
CN115196883B (zh) * 2021-11-16 2024-04-05 国科大杭州高等研究院 一种钙钛矿介孔玻璃的制备方法及其应用
CN114276289A (zh) * 2021-12-24 2022-04-05 山西大学 一种二维单层dj型铅溴杂化钙钛矿及制备方法和应用
US12707885B2 (en) 2022-01-28 2026-08-11 The University Of North Carolina At Chapel Hill Defect engineering in wide bandgap perovskites for efficient and stable fully textured perovskite-silicon tandem solar cells
KR102983712B1 (ko) 2024-04-15 2026-06-26 전남대학교산학협력단 페로브스카이트 산질화물 LaTiO2N의 제조방법
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871579A (en) * 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films
EP1049117B1 (en) * 1999-04-26 2011-11-02 FUJIFILM Corporation Ruthenium complex dye
US6429318B1 (en) 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
US7105360B2 (en) * 2002-03-08 2006-09-12 International Business Machines Corporation Low temperature melt-processing of organic-inorganic hybrid
EP2009064B1 (en) * 2002-07-29 2012-10-24 Mitsubishi Paper Mills Limited Organic dye, photoelectric transducing material, semiconductor electrode, and photoelectric transducing device
WO2004033756A1 (ja) 2002-10-10 2004-04-22 Kansai Paint Co., Ltd. 半導体膜の形成方法及び半導体膜の用途
WO2006001154A1 (ja) 2004-06-24 2006-01-05 Aruze Corp. ペロブスカイト型複合酸化物の製造方法
JP2011000235A (ja) 2009-06-17 2011-01-06 Fujifilm Corp 放射線検出装置及び放射線画像検出システム
WO2013126385A1 (en) * 2012-02-21 2013-08-29 Northwestern University Photoluminescent compounds
JP5946652B2 (ja) 2012-02-28 2016-07-06 富士フイルム株式会社 光電変換素子、金属錯体色素、色素増感太陽電池用色素吸着液組成物、色素増感太陽電池およびその製造方法
EP2664472B1 (en) * 2012-05-15 2016-03-30 MAHLE International GmbH Air conditioning system
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
EP3010054B1 (en) 2012-05-18 2019-02-20 Oxford University Innovation Limited Optoelectronic device
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
US10069025B2 (en) * 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
TWI485154B (zh) 2013-05-09 2015-05-21 國立成功大學 具鈣鈦礦結構吸光材料之有機混成太陽能電池及其製造方法
EP2822009A1 (en) * 2013-07-01 2015-01-07 Ecole Polytechnique Fédérale de Lausanne (EPFL) Solar cell and process for producing the same
JP2015119102A (ja) 2013-12-19 2015-06-25 アイシン精機株式会社 ハイブリッド型太陽電池
EP3111484B1 (en) * 2014-02-26 2023-09-06 Commonwealth Scientific and Industrial Research Organisation Process of forming a photoactive layer of a perovskite photoactive device
US11217751B2 (en) * 2014-04-03 2022-01-04 The Hong Kong Polytechnic University Crystal control and stability for high-performance perovskite solar cell
CN104091888B (zh) 2014-07-17 2016-08-17 湖北大学 一种钙钛矿型太阳能电池及其制备方法
US9305715B2 (en) * 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials
US20160155974A1 (en) * 2014-12-01 2016-06-02 The Regents Of The University Of California Complex pnictide metal halides for optoelectronic applications

Also Published As

Publication number Publication date
BR112017002107A2 (pt) 2017-11-21
MX2017001390A (es) 2017-09-01
US20180287082A1 (en) 2018-10-04
EP3195372B1 (en) 2019-09-04
CA3090853C (en) 2025-10-07
KR101840351B1 (ko) 2018-03-21
CN107078219B (zh) 2018-12-25
KR20220086714A (ko) 2022-06-23
JP2017535047A (ja) 2017-11-24
US9305715B2 (en) 2016-04-05
KR20210068632A (ko) 2021-06-09
AU2017204662A1 (en) 2017-07-27
BR112017002107B1 (pt) 2020-10-27
AU2019236643B2 (en) 2021-04-01
US10741779B2 (en) 2020-08-11
ES2748700T3 (es) 2020-03-17
JP2018137449A (ja) 2018-08-30
AU2015296288A1 (en) 2017-02-23
KR20230129597A (ko) 2023-09-08
US11800726B1 (en) 2023-10-24
KR102262957B1 (ko) 2021-06-09
AU2023204268A1 (en) 2023-07-27
EP3195372A4 (en) 2017-11-01
KR102572951B1 (ko) 2023-09-01
US12302681B2 (en) 2025-05-13
KR20240017961A (ko) 2024-02-08
KR20230049769A (ko) 2023-04-13
KR102519361B1 (ko) 2023-04-10
US20240008295A1 (en) 2024-01-04
WO2016019124A1 (en) 2016-02-04
CA2956633A1 (en) 2016-02-04
CA3090853A1 (en) 2016-02-04
KR102774945B1 (ko) 2025-03-04
AU2015296288B2 (en) 2017-04-13
AU2021204425A1 (en) 2021-07-29
KR102410984B1 (ko) 2022-06-22
KR102630369B1 (ko) 2024-01-30
CA3254459A1 (en) 2025-07-03
US11508924B2 (en) 2022-11-22
AU2019236643A1 (en) 2019-10-17
JP6301548B2 (ja) 2018-03-28
MX369793B (es) 2019-11-21
US20200358436A1 (en) 2020-11-12
CA3010113A1 (en) 2016-02-04
US9991457B2 (en) 2018-06-05
CA3010113C (en) 2020-09-22
KR20190039618A (ko) 2019-04-12
EP3576173A3 (en) 2020-01-08
CN110112294A (zh) 2019-08-09
MX2019013856A (es) 2020-01-30
KR20170054389A (ko) 2017-05-17
AU2025202759A1 (en) 2025-05-08
EP3195372A1 (en) 2017-07-26
CA2956633C (en) 2020-02-11
CN107078219A (zh) 2017-08-18
US20160035496A1 (en) 2016-02-04
US20160268529A1 (en) 2016-09-15
AU2017204662B2 (en) 2019-06-27
KR20180030728A (ko) 2018-03-23
AU2021204425B2 (en) 2023-04-06
EP3576173A2 (en) 2019-12-04

Similar Documents

Publication Publication Date Title
EP3195372A4 (en) Method of formulating perovskite solar cell materials
EP3136450A4 (en) Perovskite solar cell and manufacturing method therefor
EP3125323A4 (en) Solar cell
EP3128098A4 (en) Solar cell apparatus
EP3169824A4 (en) Laser-transferred ibc solar cells
SG11201608039SA (en) High voltage solar modules
SG11201701356WA (en) Solar cell and method for producing thereof
PL3125302T3 (pl) Ogniwo słoneczne
PL3182468T3 (pl) Sposób wytwarzania ogniwa słonecznego
EP3208860A4 (en) Solar cell
SG11201608045TA (en) Solar cells with tunnel dielectrics
EP3208858A4 (en) Solar cell
SG11201609998SA (en) Solar cell and method for producing solar cell
HUE047530T2 (hu) Napelem
HUP1400380A2 (hu) Napelem cella elrendezés
EP3200242A4 (en) Solar cell element
EP3105797A4 (en) Solar cells and methods of fabrication thereof
EP3103870A4 (en) Method for obtaining transformed cells of plant
EP3101696A4 (en) Solar cell and solar cell manufacturing method
SG11201701418RA (en) Solar cell and manufacturing method of solar cell
SG11201610430QA (en) Growth-independent detection of cells
EP3208859A4 (en) Solar cell
GB201504291D0 (en) PV cells
EP3208857A4 (en) Solar cell
GB201410011D0 (en) Perovskite pigments for solar cells