PL3380650T3 - Kompozycja kąpieli galwanicznej i sposób bezprądowego powlekania palladem - Google Patents

Kompozycja kąpieli galwanicznej i sposób bezprądowego powlekania palladem

Info

Publication number
PL3380650T3
PL3380650T3 PL16801787T PL16801787T PL3380650T3 PL 3380650 T3 PL3380650 T3 PL 3380650T3 PL 16801787 T PL16801787 T PL 16801787T PL 16801787 T PL16801787 T PL 16801787T PL 3380650 T3 PL3380650 T3 PL 3380650T3
Authority
PL
Poland
Prior art keywords
composition
electroplating bath
electroless palladium
palladium coating
coating
Prior art date
Application number
PL16801787T
Other languages
English (en)
Inventor
Andreas Walter
Christof Suchentrunk
Thomas Beck
Gerhard Steinberger
Holger BERA
Heiko Brunner
Sven Rückbrod
Original Assignee
Atotech Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland Gmbh filed Critical Atotech Deutschland Gmbh
Publication of PL3380650T3 publication Critical patent/PL3380650T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1683—Control of electrolyte composition, e.g. measurement, adjustment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/072—Electroless plating, e.g. finish plating or initial plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/243—Reinforcing of the conductive pattern characterised by selective plating, e.g. for finish plating of pads

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
PL16801787T 2015-11-27 2016-11-28 Kompozycja kąpieli galwanicznej i sposób bezprądowego powlekania palladem PL3380650T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15196815 2015-11-27
EP16801787.9A EP3380650B1 (en) 2015-11-27 2016-11-28 Plating bath composition and method for electroless plating of palladium
PCT/EP2016/079002 WO2017089608A1 (en) 2015-11-27 2016-11-28 Plating bath composition and method for electroless plating of palladium

Publications (1)

Publication Number Publication Date
PL3380650T3 true PL3380650T3 (pl) 2020-06-15

Family

ID=54754479

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16801787T PL3380650T3 (pl) 2015-11-27 2016-11-28 Kompozycja kąpieli galwanicznej i sposób bezprądowego powlekania palladem

Country Status (9)

Country Link
US (1) US20180340261A1 (pl)
EP (1) EP3380650B1 (pl)
JP (1) JP6899823B2 (pl)
KR (1) KR102080421B1 (pl)
CN (1) CN108291306B (pl)
PL (1) PL3380650T3 (pl)
PT (1) PT3380650T (pl)
TW (2) TWI649449B (pl)
WO (1) WO2017089608A1 (pl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102614202B1 (ko) * 2014-12-17 2023-12-14 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 팔라듐의 무전해 도금을 위한 도금 배쓰 조성물 및 방법
TWI707061B (zh) * 2015-11-27 2020-10-11 德商德國艾托特克公司 鈀之電鍍浴組合物及無電電鍍方法
CN110952081B (zh) * 2018-09-27 2022-04-29 Imec 非营利协会 用于形成互连部的方法和溶液
EP4407067A1 (en) * 2023-01-24 2024-07-31 Atotech Deutschland GmbH & Co. KG Plating bath composition for plating of precious metal and a method for depositing a precious metal layer

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310430A (en) * 1965-06-30 1967-03-21 Day Company Electroless copper plating
US3622367A (en) * 1970-03-24 1971-11-23 Mobil Oil Corp Contact deposition of platinum and other metals
JPS504327B1 (pl) * 1970-06-03 1975-02-18
NL7402422A (nl) * 1974-02-22 1975-08-26 Philips Nv Universele verkoperingsoplossing.
JPS518573A (en) * 1974-07-10 1976-01-23 Hitachi Ltd Purintokairobanno seiho
FR2403399A1 (fr) * 1977-09-19 1979-04-13 Oxy Metal Industries Corp Bains de revetement electrolytique de palladium brillant
US4162141A (en) * 1977-12-27 1979-07-24 West Clarence W Variable air flow oven
US4255194A (en) * 1979-01-15 1981-03-10 Mine Safety Appliances Company Palladium alloy baths for the electroless deposition
US4550166A (en) * 1984-05-21 1985-10-29 American Cyanamid Company (Pyridinyl)-1,2,4-triazolo[4,3-a]pyridines
US5882736A (en) 1993-05-13 1999-03-16 Atotech Deutschland Gmbh palladium layers deposition process
JP3671266B2 (ja) * 1996-03-21 2005-07-13 東洋化成工業株式会社 ５−置換テトラゾール類の製造方法
RU2375350C2 (ru) * 2003-06-04 2009-12-10 Смитклайн Бичам Корпорейшн Азотсодержащие производные гетероарила
JP5526459B2 (ja) * 2006-12-06 2014-06-18 上村工業株式会社 無電解金めっき浴及び無電解金めっき方法
CN101503428B (zh) * 2008-12-30 2011-12-07 西安凯立化工有限公司 一种钯配合物的制备方法
JP4511623B1 (ja) * 2009-05-08 2010-07-28 小島化学薬品株式会社 無電解パラジウムめっき液
JP2011119097A (ja) * 2009-12-02 2011-06-16 Sony Corp 非水電解質電池
EP2581470B1 (en) * 2011-10-12 2016-09-28 ATOTECH Deutschland GmbH Electroless palladium plating bath composition
EP2740818B1 (en) * 2012-12-05 2016-03-30 ATOTECH Deutschland GmbH Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes
EP2784182A1 (de) * 2013-03-28 2014-10-01 Technische Universität Darmstadt Ein Palladium-Abscheidungsbad und dessen Verwendung zur hochkontrollierten stromfreien Palladium-Abscheidung auf nanopartikulären Strukturen
KR101617654B1 (ko) * 2013-08-23 2016-05-03 숭실대학교 산학협력단 무전해 도금법을 이용한 팔라듐 박막 제조방법
JP6347853B2 (ja) * 2014-04-10 2018-06-27 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ パラジウムの無電解めっきのためのめっき浴組成物及び方法
CN105061516A (zh) * 2015-08-26 2015-11-18 合肥工业大学 一种钯配合物的合成方法及用途

Also Published As

Publication number Publication date
CN108291306A (zh) 2018-07-17
KR102080421B1 (ko) 2020-02-21
WO2017089608A1 (en) 2017-06-01
TW201738410A (zh) 2017-11-01
EP3380650A1 (en) 2018-10-03
KR20180081818A (ko) 2018-07-17
US20180340261A1 (en) 2018-11-29
EP3380650B1 (en) 2019-10-30
TWI649449B (zh) 2019-02-01
PT3380650T (pt) 2020-02-03
TWI692547B (zh) 2020-05-01
JP6899823B2 (ja) 2021-07-07
JP2018535325A (ja) 2018-11-29
CN108291306B (zh) 2019-12-27

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