PL372746A1 - Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania - Google Patents

Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania

Info

Publication number
PL372746A1
PL372746A1 PL05372746A PL37274605A PL372746A1 PL 372746 A1 PL372746 A1 PL 372746A1 PL 05372746 A PL05372746 A PL 05372746A PL 37274605 A PL37274605 A PL 37274605A PL 372746 A1 PL372746 A1 PL 372746A1
Authority
PL
Poland
Prior art keywords
nitrides
layers
manufacture
type transistor
chemical elements
Prior art date
Application number
PL05372746A
Other languages
English (en)
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL04368483A external-priority patent/PL368483A1/pl
Application filed by Ammono Sp.Z O.O. filed Critical Ammono Sp.Z O.O.
Priority to PL05372746A priority Critical patent/PL372746A1/pl
Priority to JP2007527098A priority patent/JP4579294B2/ja
Priority to US11/629,125 priority patent/US8754449B2/en
Priority to EP05748691A priority patent/EP1759408A1/en
Priority to KR1020067027359A priority patent/KR100848379B1/ko
Priority to PCT/PL2005/000036 priority patent/WO2005122232A1/en
Publication of PL372746A1 publication Critical patent/PL372746A1/pl
Priority to JP2009001451A priority patent/JP2009141377A/ja
Priority to JP2009199105A priority patent/JP5309395B2/ja

Links

PL05372746A 2004-06-11 2005-02-11 Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania PL372746A1 (pl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PL05372746A PL372746A1 (pl) 2004-06-11 2005-02-11 Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania
JP2007527098A JP4579294B2 (ja) 2004-06-11 2005-06-10 第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法
US11/629,125 US8754449B2 (en) 2004-06-11 2005-06-10 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
EP05748691A EP1759408A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
KR1020067027359A KR100848379B1 (ko) 2004-06-11 2005-06-10 Ⅹⅲ족 원소 질화물의 층으로 이루어진 고 전자이동도트랜지스터 및 그 제조 방법
PCT/PL2005/000036 WO2005122232A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
JP2009001451A JP2009141377A (ja) 2004-06-11 2009-01-07 高電子移動度トランジスタ（ｈｅｍｔ）用基板
JP2009199105A JP5309395B2 (ja) 2004-06-11 2009-08-29 高電子移動度トランジスタ（ｈｅｍｔ）用基板

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL04368483A PL368483A1 (pl) 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie
PL05372746A PL372746A1 (pl) 2004-06-11 2005-02-11 Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania

Publications (1)

Publication Number Publication Date
PL372746A1 true PL372746A1 (pl) 2005-12-12

Family

ID=37495836

Family Applications (1)

Application Number Title Priority Date Filing Date
PL05372746A PL372746A1 (pl) 2004-06-11 2005-02-11 Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania

Country Status (1)

Country Link
PL (1) PL372746A1 (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates

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