PL368483A1 - Monokryształy azotku zawierającego gal oraz jego zastosowanie - Google Patents

Monokryształy azotku zawierającego gal oraz jego zastosowanie

Info

Publication number: PL368483A1
Authority: PL; Poland
Prior art keywords: monocrystals; application; nitride containing; containing gallium; gallium
Prior art date: 2004-06-11

Application number

PL04368483A

Other languages

English (en)

Inventor

Robert Dwiliński

Roman Doradziński

Jerzy Garczyński

Leszek Sierzputowski

Yasuo Kanbara

Robert Kucharski

Original Assignee

Ammono Sp.Z O.O.

Nichia Corporation

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-06-11

Filing date

2004-06-11

Publication date

2005-12-12

2004-06-11 Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.

2004-06-11 Priority to PL04368483A priority Critical patent/PL368483A1/pl

2005-02-11 Priority to PL05372746A priority patent/PL372746A1/pl

2005-06-10 Priority to PCT/JP2005/011093 priority patent/WO2005121415A1/en

2005-06-10 Priority to JP2006551658A priority patent/JP5014804B2/ja

2005-06-10 Priority to PL05751252T priority patent/PL1769105T3/pl

2005-06-10 Priority to CN2005800188221A priority patent/CN1973063B/zh

2005-06-10 Priority to EP05751252.7A priority patent/EP1769105B1/en

2005-06-10 Priority to PCT/PL2005/000036 priority patent/WO2005122232A1/en

2005-06-10 Priority to US11/629,125 priority patent/US8754449B2/en

2005-06-10 Priority to EP05748691A priority patent/EP1759408A1/en

2005-06-10 Priority to JP2007527098A priority patent/JP4579294B2/ja

2005-06-10 Priority to KR1020067027359A priority patent/KR100848379B1/ko

2005-06-10 Priority to CNB200580019026XA priority patent/CN100485888C/zh

2005-06-10 Priority to KR1020067027510A priority patent/KR100848380B1/ko

2005-06-10 Priority to US11/629,109 priority patent/US8398767B2/en

2005-12-12 Publication of PL368483A1 publication Critical patent/PL368483A1/pl

2009-01-07 Priority to JP2009001451A priority patent/JP2009141377A/ja

2009-08-29 Priority to JP2009199105A priority patent/JP5309395B2/ja

Links

GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
229910052733 gallium Inorganic materials 0.000 title 1
150000004767 nitrides Chemical class 0.000 title 1

PL04368483A 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie PL368483A1 (pl)

Priority Applications (17)

Application Number	Priority Date	Filing Date	Title
PL04368483A PL368483A1 (pl)	2004-06-11	2004-06-11	Monokryształy azotku zawierającego gal oraz jego zastosowanie
PL05372746A PL372746A1 (pl)	2004-06-11	2005-02-11	Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania
PCT/PL2005/000036 WO2005122232A1 (en)	2004-06-11	2005-06-10	High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
EP05748691A EP1759408A1 (en)	2004-06-11	2005-06-10	High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
PL05751252T PL1769105T3 (pl)	2004-06-11	2005-06-10	Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
CN2005800188221A CN1973063B (zh)	2004-06-11	2005-06-10	块状单晶含镓氮化物及其应用
EP05751252.7A EP1769105B1 (en)	2004-06-11	2005-06-10	Bulk mono-crystalline gallium nitride and method for its preparation
PCT/JP2005/011093 WO2005121415A1 (en)	2004-06-11	2005-06-10	Bulk mono-crystalline gallium-containing nitride and its application
US11/629,125 US8754449B2 (en)	2004-06-11	2005-06-10	High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
JP2006551658A JP5014804B2 (ja)	2004-06-11	2005-06-10	バルク単結晶ガリウム含有窒化物およびその用途
JP2007527098A JP4579294B2 (ja)	2004-06-11	2005-06-10	第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法
KR1020067027359A KR100848379B1 (ko)	2004-06-11	2005-06-10	Ⅹⅲ족 원소 질화물의 층으로 이루어진 고 전자이동도트랜지스터 및 그 제조 방법
CNB200580019026XA CN100485888C (zh)	2004-06-11	2005-06-10	由xⅲ族元素氮化物层制成的高电子迁移率晶体管（hemt）及其制造方法
KR1020067027510A KR100848380B1 (ko)	2004-06-11	2005-06-10	갈륨 함유 질화물의 벌크 단결정 및 그의 어플리케이션
US11/629,109 US8398767B2 (en)	2004-06-11	2005-06-10	Bulk mono-crystalline gallium-containing nitride and its application
JP2009001451A JP2009141377A (ja)	2004-06-11	2009-01-07	高電子移動度トランジスタ（ｈｅｍｔ）用基板
JP2009199105A JP5309395B2 (ja)	2004-06-11	2009-08-29	高電子移動度トランジスタ（ｈｅｍｔ）用基板

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PL04368483A PL368483A1 (pl)	2004-06-11	2004-06-11	Monokryształy azotku zawierającego gal oraz jego zastosowanie

Publications (1)

Publication Number	Publication Date
PL368483A1 true PL368483A1 (pl)	2005-12-12

Family

ID=37495759

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PL04368483A PL368483A1 (pl)	2004-06-11	2004-06-11	Monokryształy azotku zawierającego gal oraz jego zastosowanie

Country Status (2)

Country	Link
CN (2)	CN1973063B (pl)
PL (1)	PL368483A1 (pl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP2267197A1 (en)	2009-06-25	2010-12-29	AMMONO Sp.z o.o.	Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en)	2010-04-06	2015-03-10	Instytut Wysokich Ciśnień Polskiej Akademi Nauk	Substrate for epitaxial growth

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6106932B2 (ja) *	2012-03-19	2017-04-05	株式会社リコー	１３族窒化物結晶、及び１３族窒化物結晶基板
CN104781456B (zh) *	2012-08-24	2018-01-12	希波特公司	掺杂铋的半绝缘第iii族氮化物晶片和其制造方法
WO2016118862A1 (en) *	2015-01-22	2016-07-28	Sixpoint Materials, Inc.	Seed selection and growth methods for reduced-crack group iii nitride bulk crystals
WO2017077806A1 (ja) *	2015-11-02	2017-05-11	日本碍子株式会社	半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
ATE452999T1 (de) *	2001-10-26	2010-01-15	Ammono Sp Zoo	Substrat für epitaxie
US7030428B2 (en) *	2001-12-03	2006-04-18	Cree, Inc.	Strain balanced nitride heterojunction transistors
WO2003050849A2 (en) *	2001-12-06	2003-06-19	Hrl Laboratories, Llc	High power-low noise microwave gan heterojunction field effet transistor
JP4221697B2 (ja) *	2002-06-17	2009-02-12	日本電気株式会社	半導体装置

2004
- 2004-06-11 PL PL04368483A patent/PL368483A1/pl not_active Application Discontinuation
2005
- 2005-06-10 CN CN2005800188221A patent/CN1973063B/zh not_active Expired - Fee Related
- 2005-06-10 CN CNB200580019026XA patent/CN100485888C/zh not_active Expired - Fee Related

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP2267197A1 (en)	2009-06-25	2010-12-29	AMMONO Sp.z o.o.	Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en)	2010-04-06	2015-03-10	Instytut Wysokich Ciśnień Polskiej Akademi Nauk	Substrate for epitaxial growth

Also Published As

Publication number	Publication date
CN1965399A (zh)	2007-05-16
CN1973063B (zh)	2010-09-15
CN1973063A (zh)	2007-05-30
CN100485888C (zh)	2009-05-06

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Legal Events

Date	Code	Title	Description
2015-11-30	REFS	Decisions on refusal to grant patents (taken after the publication of the particulars of the applications)