PL368483A1 - Monokryształy azotku zawierającego gal oraz jego zastosowanie - Google Patents

Monokryształy azotku zawierającego gal oraz jego zastosowanie

Info

Publication number
PL368483A1
PL368483A1 PL04368483A PL36848304A PL368483A1 PL 368483 A1 PL368483 A1 PL 368483A1 PL 04368483 A PL04368483 A PL 04368483A PL 36848304 A PL36848304 A PL 36848304A PL 368483 A1 PL368483 A1 PL 368483A1
Authority
PL
Poland
Prior art keywords
monocrystals
application
nitride containing
containing gallium
gallium
Prior art date
Application number
PL04368483A
Other languages
English (en)
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek Sierzputowski
Yasuo Kanbara
Robert Kucharski
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL04368483A priority Critical patent/PL368483A1/pl
Priority to PL05372746A priority patent/PL372746A1/pl
Priority to US11/629,125 priority patent/US8754449B2/en
Priority to JP2006551658A priority patent/JP5014804B2/ja
Priority to PCT/JP2005/011093 priority patent/WO2005121415A1/en
Priority to EP05748691A priority patent/EP1759408A1/en
Priority to US11/629,109 priority patent/US8398767B2/en
Priority to PCT/PL2005/000036 priority patent/WO2005122232A1/en
Priority to CN2005800188221A priority patent/CN1973063B/zh
Priority to KR1020067027359A priority patent/KR100848379B1/ko
Priority to PL05751252T priority patent/PL1769105T3/pl
Priority to CNB200580019026XA priority patent/CN100485888C/zh
Priority to JP2007527098A priority patent/JP4579294B2/ja
Priority to EP05751252.7A priority patent/EP1769105B1/en
Priority to KR1020067027510A priority patent/KR100848380B1/ko
Publication of PL368483A1 publication Critical patent/PL368483A1/pl
Priority to JP2009001451A priority patent/JP2009141377A/ja
Priority to JP2009199105A priority patent/JP5309395B2/ja

Links

PL04368483A 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie PL368483A1 (pl)

Priority Applications (17)

Application Number Priority Date Filing Date Title
PL04368483A PL368483A1 (pl) 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie
PL05372746A PL372746A1 (pl) 2004-06-11 2005-02-11 Tranzystor typu HEMT, zbudowany z warstw azotków pierwiastków grupy XIII oraz metoda jego wytwarzania
PCT/PL2005/000036 WO2005122232A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
KR1020067027359A KR100848379B1 (ko) 2004-06-11 2005-06-10 Ⅹⅲ족 원소 질화물의 층으로 이루어진 고 전자이동도트랜지스터 및 그 제조 방법
PCT/JP2005/011093 WO2005121415A1 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium-containing nitride and its application
EP05748691A EP1759408A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US11/629,109 US8398767B2 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium-containing nitride and its application
US11/629,125 US8754449B2 (en) 2004-06-11 2005-06-10 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
CN2005800188221A CN1973063B (zh) 2004-06-11 2005-06-10 块状单晶含镓氮化物及其应用
JP2006551658A JP5014804B2 (ja) 2004-06-11 2005-06-10 バルク単結晶ガリウム含有窒化物およびその用途
PL05751252T PL1769105T3 (pl) 2004-06-11 2005-06-10 Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
CNB200580019026XA CN100485888C (zh) 2004-06-11 2005-06-10 由xⅲ族元素氮化物层制成的高电子迁移率晶体管（hemt）及其制造方法
JP2007527098A JP4579294B2 (ja) 2004-06-11 2005-06-10 第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法
EP05751252.7A EP1769105B1 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium nitride and method for its preparation
KR1020067027510A KR100848380B1 (ko) 2004-06-11 2005-06-10 갈륨 함유 질화물의 벌크 단결정 및 그의 어플리케이션
JP2009001451A JP2009141377A (ja) 2004-06-11 2009-01-07 高電子移動度トランジスタ（ｈｅｍｔ）用基板
JP2009199105A JP5309395B2 (ja) 2004-06-11 2009-08-29 高電子移動度トランジスタ（ｈｅｍｔ）用基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL04368483A PL368483A1 (pl) 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie

Publications (1)

Publication Number Publication Date
PL368483A1 true PL368483A1 (pl) 2005-12-12

Family

ID=37495759

Family Applications (1)

Application Number Title Priority Date Filing Date
PL04368483A PL368483A1 (pl) 2004-06-11 2004-06-11 Monokryształy azotku zawierającego gal oraz jego zastosowanie

Country Status (2)

Country Link
CN (2) CN1973063B (pl)
PL (1) PL368483A1 (pl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en) 2010-04-06 2015-03-10 Instytut Wysokich Ciśnień Polskiej Akademi Nauk Substrate for epitaxial growth

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6106932B2 (ja) * 2012-03-19 2017-04-05 株式会社リコー １３族窒化物結晶、及び１３族窒化物結晶基板
EP2888390A1 (en) * 2012-08-24 2015-07-01 Sixpoint Materials Inc. A bismuth-doped semi-insulating group iii nitride wafer and its production method
EP3247824A1 (en) * 2015-01-22 2017-11-29 SixPoint Materials, Inc. Seed selection and growth methods for reduced-crack group iii nitride bulk crystals
DE112016005022T5 (de) * 2015-11-02 2018-08-02 Ngk Insulators, Ltd. Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL225235B1 (pl) * 2001-10-26 2017-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Objętościowy monokryształ azotkowy oraz jego zastosowanie jako podłoże do epitaksji
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
WO2003050849A2 (en) * 2001-12-06 2003-06-19 Hrl Laboratories, Llc High power-low noise microwave gan heterojunction field effet transistor
JP4221697B2 (ja) * 2002-06-17 2009-02-12 日本電気株式会社 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en) 2010-04-06 2015-03-10 Instytut Wysokich Ciśnień Polskiej Akademi Nauk Substrate for epitaxial growth

Also Published As

Publication number Publication date
CN100485888C (zh) 2009-05-06
CN1973063A (zh) 2007-05-30
CN1973063B (zh) 2010-09-15
CN1965399A (zh) 2007-05-16

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