PL3758076T3 - Dioda emitująca światło - Google Patents
Dioda emitująca światłoInfo
- Publication number
- PL3758076T3 PL3758076T3 PL20190306.9T PL20190306T PL3758076T3 PL 3758076 T3 PL3758076 T3 PL 3758076T3 PL 20190306 T PL20190306 T PL 20190306T PL 3758076 T3 PL3758076 T3 PL 3758076T3
- Authority
- PL
- Poland
- Prior art keywords
- light
- emitting diode
- diode
- emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090131693A KR101654340B1 (ko) | 2009-12-28 | 2009-12-28 | 발광 다이오드 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3758076T3 true PL3758076T3 (pl) | 2023-08-28 |
Family
ID=43828431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL20190306.9T PL3758076T3 (pl) | 2009-12-28 | 2010-11-23 | Dioda emitująca światło |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8946744B2 (pl) |
| EP (3) | EP3758076B1 (pl) |
| JP (1) | JP5639856B2 (pl) |
| KR (1) | KR101654340B1 (pl) |
| CN (2) | CN102110754B (pl) |
| PL (1) | PL3758076T3 (pl) |
| TW (1) | TWI464914B (pl) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236532B2 (en) * | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
| KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101194844B1 (ko) * | 2010-11-15 | 2012-10-25 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
| JP5652234B2 (ja) * | 2011-02-07 | 2015-01-14 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP5776203B2 (ja) * | 2011-02-14 | 2015-09-09 | 日亜化学工業株式会社 | 発光素子 |
| CN108807626B (zh) * | 2011-09-15 | 2020-02-21 | 晶元光电股份有限公司 | 发光元件 |
| JP5961359B2 (ja) * | 2011-09-20 | 2016-08-02 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| US20140225062A1 (en) * | 2011-10-05 | 2014-08-14 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element |
| KR101981119B1 (ko) * | 2011-11-25 | 2019-05-22 | 엘지이노텍 주식회사 | 자외선 반도체 발광 소자 |
| JP2013145867A (ja) * | 2011-12-15 | 2013-07-25 | Hitachi Cable Ltd | 窒化物半導体テンプレート及び発光ダイオード |
| KR101883842B1 (ko) | 2011-12-26 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 조명시스템 |
| TWI479694B (zh) | 2012-01-11 | 2015-04-01 | Formosa Epitaxy Inc | Light emitting diode wafers |
| US9076923B2 (en) * | 2012-02-13 | 2015-07-07 | Epistar Corporation | Light-emitting device manufacturing method |
| TWI572054B (zh) * | 2012-03-16 | 2017-02-21 | 晶元光電股份有限公司 | 高亮度發光二極體結構與其製造方法 |
| KR101293495B1 (ko) * | 2012-03-20 | 2013-08-06 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| US8546831B1 (en) * | 2012-05-17 | 2013-10-01 | High Power Opto Inc. | Reflection convex mirror structure of a vertical light-emitting diode |
| US8816379B2 (en) | 2012-05-17 | 2014-08-26 | High Power Opto, Inc. | Reflection curved mirror structure of a vertical light-emitting diode |
| US8748928B2 (en) | 2012-05-17 | 2014-06-10 | High Power Opto, Inc. | Continuous reflection curved mirror structure of a vertical light-emitting diode |
| US9496458B2 (en) * | 2012-06-08 | 2016-11-15 | Cree, Inc. | Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same |
| JP2013258174A (ja) * | 2012-06-11 | 2013-12-26 | Nichia Chem Ind Ltd | 半導体発光素子 |
| CN103489980A (zh) * | 2012-06-12 | 2014-01-01 | 群康科技(深圳)有限公司 | 一种发光元件及其制作方法 |
| CN104620399B (zh) * | 2012-09-07 | 2020-02-21 | 首尔伟傲世有限公司 | 晶圆级发光二极管阵列 |
| KR102013363B1 (ko) * | 2012-11-09 | 2019-08-22 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| CN102945906A (zh) * | 2012-12-06 | 2013-02-27 | 上海顿格电子贸易有限公司 | 水平结构的led芯片 |
| CN105074941B (zh) * | 2012-12-06 | 2019-10-08 | 首尔伟傲世有限公司 | 发光二极管、照明模块、照明设备和背光单元 |
| JP6102677B2 (ja) | 2012-12-28 | 2017-03-29 | 日亜化学工業株式会社 | 発光素子 |
| CN105122478B (zh) * | 2013-04-23 | 2018-01-23 | 皇家飞利浦有限公司 | 用于发光器件的侧面互连 |
| TWI604633B (zh) * | 2013-11-05 | 2017-11-01 | 晶元光電股份有限公司 | 發光元件 |
| CN104638084B (zh) * | 2013-11-11 | 2019-07-02 | 晶元光电股份有限公司 | 发光元件 |
| WO2015074353A1 (zh) * | 2013-11-25 | 2015-05-28 | 扬州中科半导体照明有限公司 | 一种半导体发光二极管芯片 |
| JP6458463B2 (ja) | 2013-12-09 | 2019-01-30 | 日亜化学工業株式会社 | 発光素子 |
| JP2015207754A (ja) | 2013-12-13 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置 |
| WO2015145899A1 (ja) * | 2014-03-24 | 2015-10-01 | シャープ株式会社 | 窒化物半導体発光素子 |
| KR102357289B1 (ko) * | 2014-07-01 | 2022-02-03 | 서울바이오시스 주식회사 | 발광 소자 |
| CN104269471A (zh) * | 2014-09-28 | 2015-01-07 | 映瑞光电科技(上海)有限公司 | 全角度侧壁反射电极的led芯片及其制作方法 |
| JP2016100510A (ja) * | 2014-11-25 | 2016-05-30 | 泰谷光電科技股▲ふん▼有限公司 | 電流拡散構成を有する発光ダイオード |
| KR102322842B1 (ko) * | 2014-12-26 | 2021-11-08 | 엘지이노텍 주식회사 | 발광 소자 어레이 |
| US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| WO2016177333A1 (zh) * | 2015-05-05 | 2016-11-10 | 湘能华磊光电股份有限公司 | Iii族半导体发光器件倒装结构的制作方法 |
| CN105720156B (zh) * | 2016-02-03 | 2018-07-31 | 华灿光电(苏州）有限公司 | 一种发光二极管及其制作方法 |
| JP6668863B2 (ja) * | 2016-03-22 | 2020-03-18 | 日亜化学工業株式会社 | 発光素子 |
| CN105957928B (zh) * | 2016-05-31 | 2018-10-09 | 华灿光电股份有限公司 | 一种谐振腔发光二极管及其制造方法 |
| CN106129206B (zh) * | 2016-07-29 | 2019-02-26 | 天津三安光电有限公司 | 具有全镜面结构的发光二极管及其制作方法 |
| DE102017111123A1 (de) * | 2017-05-22 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| US10892297B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| JP7079106B2 (ja) * | 2018-01-24 | 2022-06-01 | シャープ株式会社 | 画像表示素子、及び画像表示素子の製造方法 |
| TWI661574B (zh) * | 2018-06-06 | 2019-06-01 | 友達光電股份有限公司 | 微型發光二極體顯示器、微型發光二極體元件及其製作方法 |
| CN109244207A (zh) * | 2018-08-30 | 2019-01-18 | 佛山市国星半导体技术有限公司 | 一种led芯片及其制作方法 |
| CN109088309B (zh) * | 2018-10-16 | 2024-01-26 | 厦门乾照半导体科技有限公司 | 一种高频垂直腔面发射激光器芯片及其制备方法 |
| KR102624112B1 (ko) * | 2018-10-23 | 2024-01-12 | 서울바이오시스 주식회사 | 플립칩형 발광 다이오드 칩 |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| CN111463329B (zh) * | 2019-01-18 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 一种led芯片及其制作方法 |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7558175B2 (ja) | 2019-01-29 | 2024-09-30 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | ビデオウォール、ドライバ回路、駆動制御回路およびそれらに関する方法 |
| US12261256B2 (en) | 2019-02-11 | 2025-03-25 | Osram Opto Semiconductors Gmbh | Optoelectronic component, optoelectronic arrangement and method |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| KR20260016601A (ko) * | 2019-04-23 | 2026-02-03 | 에이엠에스-오스람 인터내셔널 게엠베하 | Led 모듈, led 디스플레이 모듈 및 그 제조 방법 |
| CN114144727A (zh) | 2019-05-23 | 2022-03-04 | 奥斯兰姆奥普托半导体股份有限两合公司 | 照明装置、导光装置和方法 |
| DE112020004395A5 (de) | 2019-09-20 | 2022-06-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, optoelektronische anordnung und verfahren |
| CN111864026B (zh) * | 2020-08-31 | 2025-03-18 | 聚灿光电科技（宿迁）有限公司 | Led芯片及led芯片制造方法 |
| CN112117358B (zh) * | 2020-09-22 | 2021-07-16 | 宁波天炬光电科技有限公司 | 单芯片大功率led芯片结构 |
| CN112467006B (zh) * | 2020-11-27 | 2023-05-16 | 錼创显示科技股份有限公司 | 微型发光二极管结构与使用其的微型发光二极管显示设备 |
| KR20230076926A (ko) * | 2021-11-23 | 2023-06-01 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
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| TW365071B (en) * | 1996-09-09 | 1999-07-21 | Toshiba Corp | Semiconductor light emitting diode and method for manufacturing the same |
| JP3346735B2 (ja) * | 1998-03-03 | 2002-11-18 | 日亜化学工業株式会社 | 窒化物半導体発光素子及びその製造方法 |
| GB9807692D0 (en) * | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| JP3896704B2 (ja) * | 1998-10-07 | 2007-03-22 | 松下電器産業株式会社 | ＧａＮ系化合物半導体発光素子 |
| JP3849506B2 (ja) * | 2000-11-28 | 2006-11-22 | 日亜化学工業株式会社 | 窒化物半導体成長基板および保護膜を用いた窒化物半導体基板の成長方法 |
| US6630689B2 (en) * | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| CN100595938C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
| EP1652238B1 (en) * | 2003-08-08 | 2010-10-27 | Kang, Sang-kyu | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
| JP4273928B2 (ja) * | 2003-10-30 | 2009-06-03 | 豊田合成株式会社 | Ｉｉｉ−ｖ族窒化物半導体素子 |
| CN1922733A (zh) * | 2004-02-20 | 2007-02-28 | 奥斯兰姆奥普托半导体有限责任公司 | 光电组件、具有多个光电组件的装置和用于制造光电组件的方法 |
| US7358544B2 (en) * | 2004-03-31 | 2008-04-15 | Nichia Corporation | Nitride semiconductor light emitting device |
| JP2006012916A (ja) * | 2004-06-22 | 2006-01-12 | Toyoda Gosei Co Ltd | 発光素子 |
| JP2006128450A (ja) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物半導体発光素子 |
| TWI253188B (en) * | 2004-11-19 | 2006-04-11 | Epistar Corp | Method of forming light emitting diode array |
| TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
| US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
| US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
| TW200828624A (en) * | 2006-12-27 | 2008-07-01 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
| JP4305554B2 (ja) * | 2007-02-28 | 2009-07-29 | ソニー株式会社 | 半導体レーザの製造方法 |
| TWI343663B (en) * | 2007-05-15 | 2011-06-11 | Epistar Corp | Light emitting diode device and manufacturing method therof |
| KR100941766B1 (ko) * | 2007-08-08 | 2010-02-11 | 한국광기술원 | 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법 |
| KR101393353B1 (ko) * | 2007-10-29 | 2014-05-13 | 서울바이오시스 주식회사 | 발광다이오드 |
| TWI370558B (en) * | 2007-11-07 | 2012-08-11 | Ind Tech Res Inst | Light emitting diode and process for fabricating the same |
| KR101354981B1 (ko) * | 2007-11-14 | 2014-01-27 | 삼성전자주식회사 | 질화물 반도체 발광 다이오드 |
| US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| JP4974867B2 (ja) * | 2007-12-12 | 2012-07-11 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| CN101257072B (zh) * | 2007-12-26 | 2010-12-15 | 厦门市三安光电科技有限公司 | 一种立体式空间分布电极的发光二极管及其制造方法 |
| KR101457204B1 (ko) * | 2008-02-01 | 2014-11-03 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조방법 |
| US8884321B2 (en) * | 2008-04-06 | 2014-11-11 | Lg Innotek Co., Ltd. | Luminous element |
-
2009
- 2009-12-28 KR KR1020090131693A patent/KR101654340B1/ko active Active
-
2010
- 2010-11-18 TW TW099139730A patent/TWI464914B/zh active
- 2010-11-18 JP JP2010257901A patent/JP5639856B2/ja active Active
- 2010-11-23 EP EP20190306.9A patent/EP3758076B1/en active Active
- 2010-11-23 EP EP10192249.0A patent/EP2339654B1/en active Active
- 2010-11-23 PL PL20190306.9T patent/PL3758076T3/pl unknown
- 2010-11-23 EP EP23168470.5A patent/EP4220743B1/en active Active
- 2010-12-21 US US12/974,605 patent/US8946744B2/en active Active
- 2010-12-28 CN CN201010623389.7A patent/CN102110754B/zh active Active
- 2010-12-28 CN CN201410374382.4A patent/CN104241488A/zh active Pending
-
2014
- 2014-12-05 US US14/561,957 patent/US20150091038A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP3758076A1 (en) | 2020-12-30 |
| EP3758076B1 (en) | 2023-04-19 |
| CN102110754A (zh) | 2011-06-29 |
| CN104241488A (zh) | 2014-12-24 |
| EP4220743C0 (en) | 2025-07-23 |
| JP2011139037A (ja) | 2011-07-14 |
| US20110156070A1 (en) | 2011-06-30 |
| EP2339654B1 (en) | 2020-08-12 |
| EP2339654A2 (en) | 2011-06-29 |
| CN102110754B (zh) | 2014-09-03 |
| US8946744B2 (en) | 2015-02-03 |
| TW201133943A (en) | 2011-10-01 |
| EP2339654A3 (en) | 2013-02-06 |
| JP5639856B2 (ja) | 2014-12-10 |
| EP4220743A3 (en) | 2023-11-29 |
| EP4220743B1 (en) | 2025-07-23 |
| TWI464914B (zh) | 2014-12-11 |
| EP4220743A2 (en) | 2023-08-02 |
| KR20110075279A (ko) | 2011-07-06 |
| US20150091038A1 (en) | 2015-04-02 |
| KR101654340B1 (ko) | 2016-09-06 |
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