PL377151A1 - Process for obtaining of bulk monocrystallline gallium-containing nitride - Google Patents

Process for obtaining of bulk monocrystallline gallium-containing nitride

Info

Publication number
PL377151A1
PL377151A1 PL377151A PL37715103A PL377151A1 PL 377151 A1 PL377151 A1 PL 377151A1 PL 377151 A PL377151 A PL 377151A PL 37715103 A PL37715103 A PL 37715103A PL 377151 A1 PL377151 A1 PL 377151A1
Authority
PL
Poland
Prior art keywords
nitride
gallium
monocrystallline
bulk
obtaining
Prior art date
Application number
PL377151A
Other languages
Polish (pl)
Other versions
PL225422B1 (en
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL354740A external-priority patent/PL205838B1/en
Priority claimed from PL357697A external-priority patent/PL232212B1/en
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL377151A priority Critical patent/PL225422B1/en
Publication of PL377151A1 publication Critical patent/PL377151A1/en
Publication of PL225422B1 publication Critical patent/PL225422B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Wynalazek obecny dotyczy nowych udoskonaleń w procesie wzrostu kryształów w środowisku nadkrytycznego roztworu zawierającego amoniak, opartych na wykorzystaniu szczególnych mineralizatorów azydkowych i prowadzących do lepszych objętościowych monokryształów azotku pierwiastka Grupy XIII, w szczególności objętościowego monokrystalicznego azotku zawierającego gal, przeznaczonego głównie do różnorodnych zastosowań w opartych na azotkach produktach półprzewodnikowych, takich jak różne urządzenia opto-elektroniczne. Wynalazek dotyczy ponadto mineralizatora stosowanego w nadkrytycznym roztworze zawierającym amoniak, który zawiera co najmniej jeden związek wybrany spośród LiN3, NaN3, KN3 oraz CsN3.The present invention relates to new improvements in the crystal growth process in a supercritical ammonia-containing solution environment, based on the use of specific azide mineralizers and leading to better volumetric single crystals of Group XIII element nitride, in particular volumetric single crystal gallium-containing nitride, intended mainly for various nitride-based applications semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used in a supercritical ammonia-containing solution that contains at least one compound selected from LiN3, NaN3, KN3 and CsN3.

PL377151A 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride PL225422B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL377151A PL225422B1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
PL354740A PL205838B1 (en) 2002-06-26 2002-06-26 Epitaxy substrate
PLP-354740 2002-06-26
PLP-357697 2002-12-11
PL357697A PL232212B1 (en) 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium
PL377151A PL225422B1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride
PCT/PL2003/000040 WO2004003261A1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride

Publications (2)

Publication Number Publication Date
PL377151A1 true PL377151A1 (en) 2006-01-23
PL225422B1 PL225422B1 (en) 2017-04-28

Family

ID=30002432

Family Applications (1)

Application Number Title Priority Date Filing Date
PL377151A PL225422B1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride

Country Status (8)

Country Link
US (1) US7364619B2 (en)
EP (1) EP1518009B1 (en)
JP (1) JP4663319B2 (en)
KR (1) KR100971851B1 (en)
CN (1) CN100339512C (en)
AU (1) AU2003238980A1 (en)
PL (1) PL225422B1 (en)
WO (1) WO2004003261A1 (en)

Families Citing this family (114)

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