PL377151A1 - Sposób otrzymywania objętościowego monokrystalicznego azotku, zawierającego gal - Google Patents

Sposób otrzymywania objętościowego monokrystalicznego azotku, zawierającego gal

Info

Publication number
PL377151A1
PL377151A1 PL377151A PL37715103A PL377151A1 PL 377151 A1 PL377151 A1 PL 377151A1 PL 377151 A PL377151 A PL 377151A PL 37715103 A PL37715103 A PL 37715103A PL 377151 A1 PL377151 A1 PL 377151A1
Authority
PL
Poland
Prior art keywords
nitride
gallium
monocrystallline
bulk
obtaining
Prior art date
Application number
PL377151A
Other languages
English (en)
Other versions
PL225422B1 (pl
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL354740A external-priority patent/PL205838B1/pl
Priority claimed from PL357697A external-priority patent/PL232212B1/pl
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL377151A priority Critical patent/PL225422B1/pl
Publication of PL377151A1 publication Critical patent/PL377151A1/pl
Publication of PL225422B1 publication Critical patent/PL225422B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Wynalazek obecny dotyczy nowych udoskonaleń w procesie wzrostu kryształów w środowisku nadkrytycznego roztworu zawierającego amoniak, opartych na wykorzystaniu szczególnych mineralizatorów azydkowych i prowadzących do lepszych objętościowych monokryształów azotku pierwiastka Grupy XIII, w szczególności objętościowego monokrystalicznego azotku zawierającego gal, przeznaczonego głównie do różnorodnych zastosowań w opartych na azotkach produktach półprzewodnikowych, takich jak różne urządzenia opto-elektroniczne. Wynalazek dotyczy ponadto mineralizatora stosowanego w nadkrytycznym roztworze zawierającym amoniak, który zawiera co najmniej jeden związek wybrany spośród LiN3, NaN3, KN3 oraz CsN3.
PL377151A 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal PL225422B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
PL354740A PL205838B1 (pl) 2002-06-26 2002-06-26 Podłoże do epitaksji
PLP-354740 2002-06-26
PL357697A PL232212B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego
PLP-357697 2002-12-11
PCT/PL2003/000040 WO2004003261A1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal

Publications (2)

Publication Number Publication Date
PL377151A1 true PL377151A1 (pl) 2006-01-23
PL225422B1 PL225422B1 (pl) 2017-04-28

Family

ID=30002432

Family Applications (1)

Application Number Title Priority Date Filing Date
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal

Country Status (8)

Country Link
US (1) US7364619B2 (pl)
EP (1) EP1518009B1 (pl)
JP (1) JP4663319B2 (pl)
KR (1) KR100971851B1 (pl)
CN (1) CN100339512C (pl)
AU (1) AU2003238980A1 (pl)
PL (1) PL225422B1 (pl)
WO (1) WO2004003261A1 (pl)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL207400B1 (pl) * 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
JP4116535B2 (ja) * 2001-06-06 2008-07-09 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン ガリウム含有窒化物の単結晶の製造法及び装置
US7057211B2 (en) * 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
AU2002347692C1 (en) 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003097906A1 (en) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
ATE445722T1 (de) * 2002-12-11 2009-10-15 Ammono Sp Zoo Schabloneartiges substrat und verfahren zu seiner herstellung
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4276020B2 (ja) * 2003-08-01 2009-06-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
CN100494520C (zh) * 2004-03-31 2009-06-03 松下电器产业株式会社 制造第iii族元素氮化物晶体的方法、其中所用的制造装置以及由此制造的半导体元件
US8754449B2 (en) 2004-06-11 2014-06-17 Ammono Sp. Z O.O. High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
KR100848380B1 (ko) 2004-06-11 2008-07-25 암모노 에스피. 제트오. 오. 갈륨 함유 질화물의 벌크 단결정 및 그의 어플리케이션
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7558631B2 (en) * 2004-12-21 2009-07-07 Ebr Systems, Inc. Leadless tissue stimulation systems and methods
WO2007008198A1 (en) * 2005-07-08 2007-01-18 The Regents Of The University Of California Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US8039412B2 (en) 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
KR101351498B1 (ko) 2005-12-20 2014-01-15 모멘티브 퍼포먼스 머티리얼즈 인크. 결정성 조성물, 소자 및 관련 방법
US7935382B2 (en) 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
KR101510461B1 (ko) 2006-01-20 2015-04-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 (Ａｌ,Ｉｎ,Ｇａ,Ｂ)Ｎ의 개선된 성장 방법
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
US8476158B2 (en) 2006-06-14 2013-07-02 Sumitomo Electric Industries, Ltd. Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture
JP4714087B2 (ja) * 2006-06-14 2011-06-29 住友電気工業株式会社 ＧａＮ基板の保存方法、および半導体デバイスの製造方法
EP2041794A4 (en) * 2006-06-21 2010-07-21 Univ California OPTOELECTRONIC AND ELECTRONIC COMPONENTS USING AN N-FACE OR M-PLANE GaN SUBSTRATE FROM AMMONOTHERMAL BREEDING
US20100104495A1 (en) * 2006-10-16 2010-04-29 Mitsubishi Chemical Corporation Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and device
WO2008051589A2 (en) * 2006-10-25 2008-05-02 The Regents Of The University Of California Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
JP5118392B2 (ja) * 2007-06-08 2013-01-16 ローム株式会社 半導体発光素子およびその製造方法
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
WO2009149300A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
JP5536046B2 (ja) * 2008-06-05 2014-07-02 ソーラ インコーポレーション 窒化物結晶成長用の高圧装置及び結晶成長方法
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
EP2286007B1 (en) 2008-06-12 2018-04-04 SixPoint Materials, Inc. Method for testing gallium nitride wafers and method for producing gallium nitride wafers
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8124996B2 (en) * 2008-08-04 2012-02-28 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US20100031873A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Basket process and apparatus for crystalline gallium-containing nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
JP2010105903A (ja) * 2008-08-21 2010-05-13 Mitsubishi Chemicals Corp 第１３族金属窒化物結晶の製造方法および半導体デバイスの製造方法
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
WO2010053996A1 (en) * 2008-11-07 2010-05-14 The Regents Of The University Of California Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals
US8641823B2 (en) * 2008-11-07 2014-02-04 The Regents Of The University Of California Reactor designs for use in ammonothermal growth of group-III nitride crystals
KR20110093852A (ko) * 2008-11-07 2011-08-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 개선된 순도를 갖는 ⅲ족 질화물 단결정 및 그의 제조 방법
US20110209659A1 (en) * 2008-11-07 2011-09-01 The Regents Of The University Of California Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal
KR20110097813A (ko) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장을 위한 신규한 용기 설계 및 소스 물질과 씨드 결정들의 상기 용기에 대한 상대적인 배치
US8574525B2 (en) * 2008-11-07 2013-11-05 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
US8852341B2 (en) 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
EP2267197A1 (en) * 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
JP2013541491A (ja) 2010-10-29 2013-11-14 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 相互に対して鋭角、直角、または鈍角を成す少なくとも２つの表面を有する種におけるｉｉｉ族窒化物結晶のアモノサーマル成長法
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8971018B2 (en) 2011-06-27 2015-03-03 Sixpoint Materials, Inc. Ultracapacitors using transition metal nitride-containing electrode and transition metal nitride
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
JP2013091596A (ja) * 2011-10-24 2013-05-16 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
WO2013062042A1 (ja) 2011-10-28 2013-05-02 三菱化学株式会社 窒化物結晶の製造方法および窒化物結晶
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
JP6931827B2 (ja) 2017-04-07 2021-09-08 日本製鋼所Ｍ＆Ｅ株式会社 結晶製造用圧力容器
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN112430848B (zh) * 2020-10-21 2021-09-28 北京工业大学 一种氮化物单晶生长装置及方法
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
EP4108812A1 (en) * 2021-06-24 2022-12-28 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing a lateral growth of crystals
CN115364780B (zh) * 2022-07-20 2024-01-26 西南科技大学 衍生二氧化钛/还原氧化石墨烯复合气凝胶的制备及应用

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137287A (ja) 1988-11-17 1990-05-25 Sanyo Electric Co Ltd 半導体レーザ装置
JPH07249830A (ja) 1994-03-10 1995-09-26 Hitachi Ltd 半導体発光素子の製造方法
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
AU6946196A (en) 1995-09-18 1997-04-09 Hitachi Limited Semiconductor material, method of producing the semiconductor material, and semiconductor device
JPH09134878A (ja) 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JPH107496A (ja) 1996-06-25 1998-01-13 Hitachi Cable Ltd 窒化物結晶の製造方法およびその装置
WO1998019375A1 (en) 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
PL184902B1 (pl) 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
PL186905B1 (pl) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
PL183687B1 (pl) 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
JP3533938B2 (ja) * 1997-06-11 2004-06-07 日立電線株式会社 窒化物結晶の製造方法、混合物、液相成長方法、窒化物結晶、窒化物結晶粉末、および気相成長方法
TW519551B (en) * 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6249534B1 (en) 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11340576A (ja) 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
TW413956B (en) 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6177057B1 (en) 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
FR2796657B1 (fr) * 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
EP1104031B1 (en) 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
US6447604B1 (en) 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP2002016285A (ja) 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
JP3968968B2 (ja) 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP4154558B2 (ja) 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
JP2002134416A (ja) * 2000-10-19 2002-05-10 Ricoh Co Ltd ｐ型３族窒化物の結晶成長方法および製造方法、並びに半導体素子
EP1346085B1 (en) 2000-11-30 2011-10-12 North Carolina State University Method for producing group iii metal nitride based materials
JP4633962B2 (ja) * 2001-05-18 2011-02-16 日亜化学工業株式会社 窒化物半導体基板の製造方法
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
JP4116535B2 (ja) * 2001-06-06 2008-07-09 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン ガリウム含有窒化物の単結晶の製造法及び装置
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same

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