PL379548A1 - Sposób otrzymywania objętościowego krystalicznego azotku zawierającego gal - Google Patents

Sposób otrzymywania objętościowego krystalicznego azotku zawierającego gal

Info

Publication number
PL379548A1
PL379548A1 PL379548A PL37954803A PL379548A1 PL 379548 A1 PL379548 A1 PL 379548A1 PL 379548 A PL379548 A PL 379548A PL 37954803 A PL37954803 A PL 37954803A PL 379548 A1 PL379548 A1 PL 379548A1
Authority
PL
Poland
Prior art keywords
containing nitride
crystalline gallium
obtaining bulk
bulk
obtaining
Prior art date
Application number
PL379548A
Other languages
English (en)
Other versions
PL225430B1 (pl
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp Z Oo
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL357695A external-priority patent/PL232211B1/pl
Priority claimed from PL02357704A external-priority patent/PL357704A1/pl
Priority claimed from PL357706A external-priority patent/PL221055B1/pl
Application filed by Ammono Sp Z Oo, Nichia Corp filed Critical Ammono Sp Z Oo
Priority to PL379548A priority Critical patent/PL225430B1/pl
Publication of PL379548A1 publication Critical patent/PL379548A1/pl
Publication of PL225430B1 publication Critical patent/PL225430B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL379548A 2002-12-11 2003-12-11 Mineralizator do zastosowania w sposobie otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w nadkrytycznym rozpuszczalniku amoniakalnym PL225430B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL379548A PL225430B1 (pl) 2002-12-11 2003-12-11 Mineralizator do zastosowania w sposobie otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w nadkrytycznym rozpuszczalniku amoniakalnym

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
PLP-357695 2002-12-11
PLP-357706 2002-12-11
PL357695A PL232211B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego
PLP-357704 2002-12-11
PL02357704A PL357704A1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL357706A PL221055B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
PCT/JP2003/015903 WO2004053208A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride
PL379548A PL225430B1 (pl) 2002-12-11 2003-12-11 Mineralizator do zastosowania w sposobie otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w nadkrytycznym rozpuszczalniku amoniakalnym

Publications (2)

Publication Number Publication Date
PL379548A1 true PL379548A1 (pl) 2006-10-16
PL225430B1 PL225430B1 (pl) 2017-04-28

Family

ID=32512152

Family Applications (1)

Application Number Title Priority Date Filing Date
PL379548A PL225430B1 (pl) 2002-12-11 2003-12-11 Mineralizator do zastosowania w sposobie otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w nadkrytycznym rozpuszczalniku amoniakalnym

Country Status (5)

Country Link
US (1) US7314517B2 (pl)
JP (1) JP2006509707A (pl)
AU (1) AU2003285766A1 (pl)
PL (1) PL225430B1 (pl)
WO (1) WO2004053208A1 (pl)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656615B2 (en) * 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
JP4860927B2 (ja) 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US8357945B2 (en) 2002-12-27 2013-01-22 Momentive Performance Materials Inc. Gallium nitride crystal and method of making same
US7786503B2 (en) 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
US7638815B2 (en) 2002-12-27 2009-12-29 Momentive Performance Materials Inc. Crystalline composition, wafer, and semi-conductor structure
US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
US7859008B2 (en) 2002-12-27 2010-12-28 Momentive Performance Materials Inc. Crystalline composition, wafer, device, and associated method
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US8398767B2 (en) 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7521732B2 (en) 2005-11-18 2009-04-21 General Electric Company Vertical heterostructure field effect transistor and associated method
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US20110300051A1 (en) * 2008-11-07 2011-12-08 The Regents Of The University Of California Group-iii nitride monocrystal with improved purity and method of producing the same
US8960657B2 (en) 2011-10-05 2015-02-24 Sunedison, Inc. Systems and methods for connecting an ingot to a wire saw
KR20140088147A (ko) 2011-10-28 2014-07-09 미쓰비시 가가꾸 가부시키가이샤 질화물 결정의 제조 방법 및 질화물 결정

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7346396A (en) 1995-10-13 1997-04-30 Centrum Badan Wysokocisnieniowych Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates
FR2796657B1 (fr) 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
US6656615B2 (en) * 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
ATE452999T1 (de) * 2001-10-26 2010-01-15 Ammono Sp Zoo Substrat für epitaxie

Also Published As

Publication number Publication date
PL225430B1 (pl) 2017-04-28
US20060120931A1 (en) 2006-06-08
JP2006509707A (ja) 2006-03-23
AU2003285766A8 (en) 2004-06-30
US7314517B2 (en) 2008-01-01
AU2003285766A1 (en) 2004-06-30
WO2004053208A1 (en) 2004-06-24

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