PL380915A1 - Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe - Google Patents

Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe

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Publication number
PL380915A1
PL380915A1 PL380915A PL38091506A PL380915A1 PL 380915 A1 PL380915 A1 PL 380915A1 PL 380915 A PL380915 A PL 380915A PL 38091506 A PL38091506 A PL 38091506A PL 380915 A1 PL380915 A1 PL 380915A1
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PL
Poland
Prior art keywords
nitride semiconductor
semiconductor base
plane
pattern
manufacture
Prior art date
Application number
PL380915A
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English (en)
Other versions
PL218607B1 (pl
Inventor
Toru Takasone
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corporation filed Critical Nichia Corporation
Publication of PL380915A1 publication Critical patent/PL380915A1/pl
Publication of PL218607B1 publication Critical patent/PL218607B1/pl

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3258—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Sposób wytwarzania azotkowego podłoża półprzewodnikowego, obejmuje etapy, w których przeprowadza się krystalizację pierwszego półprzewodnika azotkowego na podłożu, kształtuje się wzór (10) z pierwszego półprzewodnika azotkowego, z otrzymaniem wzoru otoczonego płaszczyzną równoważną płaszczyźnie krystalograficznej (11-20) i mającego co najmniej dwie części wklęsłe, które w ich kształcie płaskim są podobne, i przeprowadza się krystalizację drugiej warstwy półprzewodnika azotkowego z wykorzystaniem płaszczyzny równoważnej płaszczyźnie (11-20) we wzorze półprzewodnika azotkowego jako zarodku krystalizacji. Azotkowe podłoże półprzewodnikowe zawiera pierwszy wzór półprzewodnika azotkowego, otoczony płaszczyzną równoważną płaszczyźnie (11-20), mający co najmniej dwie części wklęsłe, które w ich kształcie płaskim są podobne i ukształtowane na podłożu oraz drugą warstwę półprzewodnika azotkowego ukształtowaną na pierwszym wzorze półprzewodnika azotowego.
PL380915A 2005-10-28 2006-10-26 Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe PL218607B1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005314688 2005-10-28
JP2006224023A JP5140962B2 (ja) 2005-10-28 2006-08-21 窒化物半導体基板の製造方法

Publications (2)

Publication Number Publication Date
PL380915A1 true PL380915A1 (pl) 2007-04-30
PL218607B1 PL218607B1 (pl) 2015-01-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PL380915A PL218607B1 (pl) 2005-10-28 2006-10-26 Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe

Country Status (3)

Country Link
US (2) US7608525B2 (pl)
JP (1) JP5140962B2 (pl)
PL (1) PL218607B1 (pl)

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JP4888377B2 (ja) * 2007-12-22 2012-02-29 日立電線株式会社 窒化物半導体自立基板
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
EP2465141B1 (en) * 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5458874B2 (ja) * 2009-12-25 2014-04-02 日亜化学工業株式会社 窒化物半導体の成長方法
KR20130088743A (ko) 2010-04-13 2013-08-08 갠 시스템즈 인크. 아일랜드 토폴로지를 이용한 고밀도 질화 갈륨 디바이스
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
TWI455426B (zh) * 2011-02-16 2014-10-01 Advanced Optoelectronic Tech 半導體鐳射器及其製造方法
CN104025260B (zh) * 2012-08-03 2016-11-23 夏普株式会社 氮化物半导体元件结构体及其制造方法

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JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
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Also Published As

Publication number Publication date
US20090246945A1 (en) 2009-10-01
US7615472B2 (en) 2009-11-10
JP5140962B2 (ja) 2013-02-13
PL218607B1 (pl) 2015-01-30
US7608525B2 (en) 2009-10-27
US20070096262A1 (en) 2007-05-03
JP2007150250A (ja) 2007-06-14

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