PL396376A1 - Polikrystaliczny azotek metalu z grupy III z getterem i sposób jego wytwarzania - Google Patents

Polikrystaliczny azotek metalu z grupy III z getterem i sposób jego wytwarzania

Info

Publication number
PL396376A1
PL396376A1 PL396376A PL39637609A PL396376A1 PL 396376 A1 PL396376 A1 PL 396376A1 PL 396376 A PL396376 A PL 396376A PL 39637609 A PL39637609 A PL 39637609A PL 396376 A1 PL396376 A1 PL 396376A1
Authority
PL
Poland
Prior art keywords
getter
preparation
group iii
iii metal
polycrystalline nitride
Prior art date
Application number
PL396376A
Other languages
English (en)
Inventor
Mark P. D'evelyn
Original Assignee
Soraa, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soraa, Inc. filed Critical Soraa, Inc.
Publication of PL396376A1 publication Critical patent/PL396376A1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
PL396376A 2008-12-12 2009-12-11 Polikrystaliczny azotek metalu z grupy III z getterem i sposób jego wytwarzania PL396376A1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12233208P 2008-12-12 2008-12-12
US12/634,665 US8461071B2 (en) 2008-12-12 2009-12-09 Polycrystalline group III metal nitride with getter and method of making

Publications (1)

Publication Number Publication Date
PL396376A1 true PL396376A1 (pl) 2012-04-23

Family

ID=42240895

Family Applications (1)

Application Number Title Priority Date Filing Date
PL396376A PL396376A1 (pl) 2008-12-12 2009-12-11 Polikrystaliczny azotek metalu z grupy III z getterem i sposób jego wytwarzania

Country Status (5)

Country Link
US (1) US8461071B2 (pl)
JP (2) JP5476637B2 (pl)
CN (2) CN104846439A (pl)
PL (1) PL396376A1 (pl)
WO (1) WO2010068916A1 (pl)

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) * 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
WO2010005914A1 (en) * 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
WO2010017148A1 (en) 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8574525B2 (en) * 2008-11-07 2013-11-05 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
JP2010171388A (ja) * 2008-12-25 2010-08-05 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法及び基板処理用反応管
US8252662B1 (en) 2009-03-28 2012-08-28 Soraa, Inc. Method and structure for manufacture of light emitting diode devices using bulk GaN
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8294179B1 (en) 2009-04-17 2012-10-23 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US9531164B2 (en) 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US9309120B2 (en) * 2009-11-12 2016-04-12 Taiheiyo Cement Corporation Method for producing alkali metal nitride or alkaline earth metal nitride
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
CN104024152A (zh) * 2011-10-24 2014-09-03 加利福尼亚大学董事会 利用碱土金属减少杂质掺入iii-族氮化物晶体
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
JP2015509669A (ja) 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 導波光効果を低減させる低屈折率材料層を有する発光ダイオード
US10145026B2 (en) * 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
JP6039469B2 (ja) * 2013-03-13 2016-12-07 太平洋セメント株式会社 金属窒化物の製造方法
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
CN104209075B (zh) * 2014-06-10 2016-04-06 天津大学 提供特定气体气氛的光反应器和应用
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
US9557238B2 (en) * 2014-07-25 2017-01-31 Ams International Ag Pressure sensor with geter embedded in membrane
PL231548B1 (pl) * 2014-09-11 2019-03-29 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US10094017B2 (en) 2015-01-29 2018-10-09 Slt Technologies, Inc. Method and system for preparing polycrystalline group III metal nitride
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
KR102722614B1 (ko) * 2016-08-05 2024-10-28 삼성디스플레이 주식회사 선형 증착원 및 이를 포함하는 증착 장치
JP6855782B2 (ja) * 2016-12-21 2021-04-07 株式会社豊田中央研究所 結晶性窒化ガリウム（ＧａＮ）及び結晶性窒化ガリウム（ＧａＮ）の気相成長方法
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US12659034B2 (en) 2017-09-28 2026-06-16 Kyocera Sld Laser, Inc. Laser based white light system configured for communication
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
JP7503539B2 (ja) * 2018-09-19 2024-06-20 インフラマティックス インコーポレイテッド 等温増幅および相対存在比を使用した宿主ｒｎａの評価
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
CN110329998B (zh) * 2019-07-23 2021-02-02 英特美光电（苏州）有限公司 一种在高压氮化炉中制备氮化锶粉末的方法
JP7718039B2 (ja) * 2019-10-07 2025-08-05 東ソー株式会社 窒化ガリウム粒子およびその製造方法
WO2021163230A1 (en) 2020-02-11 2021-08-19 Slt Technologies, Inc. Large area group iii nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP2023513570A (ja) 2020-02-11 2023-03-31 エスエルティー テクノロジーズ インコーポレイテッド 改善されたｉｉｉ族窒化物基板、その製造方法、並びにその使用方法
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
US20220065533A1 (en) * 2020-08-28 2022-03-03 Desktop Metal, Inc. Systems, devices, and methods for purifying atmosphere in a vacuum furnace
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
KR102588567B1 (ko) * 2021-07-16 2023-10-16 주식회사 원익홀딩스 Zr계 게터의 표면 불순물 제거 방법
US12677604B2 (en) 2021-12-01 2026-07-07 Slt Technologies, Inc. Group III nitride substrate with oxygen gradient, method of making, and method of use
CN116657245A (zh) * 2023-05-25 2023-08-29 中国电子科技集团公司第十三研究所 一种超临界流体状态下生长晶体的装置及方法

Family Cites Families (214)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US703358A (en) * 1900-06-12 1902-06-24 Cyrus C Webster Strip-metal-casting machine.
US3245760A (en) 1961-10-31 1966-04-12 Sawyer Res Products Inc Apparatus for growing crystals
US3303053A (en) 1963-03-26 1967-02-07 Gen Electric Pattern diamond growth on dimaond crystals
US3335084A (en) 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
US4030966A (en) 1975-06-27 1977-06-21 Western Electric Company, Inc. Method of hydrothermally growing quartz
EP0032545B1 (de) 1979-12-20 1985-02-20 F. D. International Ltd. Verfahren und Vorrichtung zur Umwandlung von Stoffen unter Anwendung hoher Drucke und Temperaturen
EP0525207B1 (en) 1991-02-15 1996-11-06 Sumitomo Electric Industries, Ltd. Process for synthesizing diamond
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6542526B1 (en) 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US6533874B1 (en) 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
US6090202A (en) 1998-04-29 2000-07-18 Sawyer Research Products, Inc. Method and apparatus for growing crystals
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JPH10335750A (ja) 1997-06-03 1998-12-18 Sony Corp 半導体基板および半導体装置
CN100344004C (zh) 1997-10-30 2007-10-17 住友电气工业株式会社 GaN单晶衬底及其制造方法
US6305923B1 (en) 1998-06-12 2001-10-23 Husky Injection Molding Systems Ltd. Molding system using film heaters and/or sensors
JP3788041B2 (ja) * 1998-06-30 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
KR100304881B1 (ko) 1998-10-15 2001-10-12 구자홍 Gan계화합물반도체및그의결정성장방법
US6152977A (en) 1998-11-30 2000-11-28 General Electric Company Surface functionalized diamond crystals and methods for producing same
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6455877B1 (en) 1999-09-08 2002-09-24 Sharp Kabushiki Kaisha III-N compound semiconductor device
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
US6452220B1 (en) 1999-12-09 2002-09-17 The Regents Of The University Of California Current isolating epitaxial buffer layers for high voltage photodiode array
US6350191B1 (en) 2000-01-14 2002-02-26 General Electric Company Surface functionalized diamond crystals and methods for producing same
KR100388011B1 (ko) 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6372002B1 (en) 2000-03-13 2002-04-16 General Electric Company Functionalized diamond, methods for producing same, abrasive composites and abrasive tools comprising functionalized diamonds
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP4374720B2 (ja) * 2000-04-21 2009-12-02 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
US6787814B2 (en) 2000-06-22 2004-09-07 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device and production method thereof
US6729248B2 (en) 2000-06-26 2004-05-04 Ada Environmental Solutions, Llc Low sulfur coal additive for improved furnace operation
JP3882539B2 (ja) 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
US6858882B2 (en) 2000-09-08 2005-02-22 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
US7102158B2 (en) 2000-10-23 2006-09-05 General Electric Company Light-based system for detecting analytes
US6936488B2 (en) 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US7053413B2 (en) 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
TW486829B (en) * 2000-11-16 2002-05-11 United Epitaxy Co Ltd Epitaxial growth of nitride semiconductor
JP2002190635A (ja) 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
US6541115B2 (en) 2001-02-26 2003-04-01 General Electric Company Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles
US6706119B2 (en) 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US6806508B2 (en) 2001-04-20 2004-10-19 General Electic Company Homoepitaxial gallium nitride based photodetector and method of producing
US7160531B1 (en) 2001-05-08 2007-01-09 University Of Kentucky Research Foundation Process for the continuous production of aligned carbon nanotubes
KR100850293B1 (ko) 2001-06-06 2008-08-04 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치
US7198671B2 (en) 2001-07-11 2007-04-03 Matsushita Electric Industrial Co., Ltd. Layered substrates for epitaxial processing, and device
JP2003063897A (ja) 2001-08-28 2003-03-05 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
EP2017901A1 (en) 2001-09-03 2009-01-21 Panasonic Corporation Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV
US7105865B2 (en) 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP3801125B2 (ja) 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
US6645885B2 (en) 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
WO2003035945A2 (en) 2001-10-26 2003-05-01 Ammono Sp. Zo.O. Substrate for epitaxy
US6861130B2 (en) 2001-11-02 2005-03-01 General Electric Company Sintered polycrystalline gallium nitride and its production
US7001577B2 (en) * 2001-11-02 2006-02-21 Diamond Innovaitons, Inc. Low oxygen cubic boron nitride and its production
US6475254B1 (en) 2001-11-16 2002-11-05 General Electric Company Functionally graded coatings for abrasive particles and use thereof in vitreous matrix composites
FR2833757B1 (fr) 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US20030140845A1 (en) 2002-01-31 2003-07-31 General Electric Company Pressure vessel
JP4513264B2 (ja) * 2002-02-22 2010-07-28 三菱化学株式会社 窒化物単結晶の製造方法
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
WO2004061969A1 (en) 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
US20030209191A1 (en) 2002-05-13 2003-11-13 Purdy Andrew P. Ammonothermal process for bulk synthesis and growth of cubic GaN
US7335262B2 (en) 2002-05-17 2008-02-26 Ammono Sp. Z O.O. Apparatus for obtaining a bulk single crystal using supercritical ammonia
AU2003299500A1 (en) * 2002-05-17 2004-06-07 The Regents Of The University Of California Hafnium nitride buffer layers for growth of gan on silicon
AUPS240402A0 (en) 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
US6927382B2 (en) 2002-05-22 2005-08-09 Agilent Technologies Optical excitation/detection device and method for making same using fluidic self-assembly techniques
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
WO2004003261A1 (en) 2002-06-26 2004-01-08 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride
US7175704B2 (en) 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
US7019434B2 (en) * 2002-11-08 2006-03-28 Iris Ao, Inc. Deformable mirror method and apparatus including bimorph flexures and integrated drive
KR101088991B1 (ko) 2002-12-11 2011-12-01 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨-함유 질화물의 제조공정
US7101433B2 (en) 2002-12-18 2006-09-05 General Electric Company High pressure/high temperature apparatus with improved temperature control for crystal growth
US7638815B2 (en) 2002-12-27 2009-12-29 Momentive Performance Materials Inc. Crystalline composition, wafer, and semi-conductor structure
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
EP1579486B1 (en) * 2002-12-27 2017-04-12 Soraa Inc. Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
US7786503B2 (en) 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
US8089097B2 (en) 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
TWI230978B (en) 2003-01-17 2005-04-11 Sanken Electric Co Ltd Semiconductor device and the manufacturing method thereof
EP2894678A1 (de) 2003-01-31 2015-07-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
JP3778186B2 (ja) 2003-02-18 2006-05-24 株式会社豊田自動織機 導光板
KR100678407B1 (ko) 2003-03-18 2007-02-02 크리스탈 포토닉스, 인코포레이티드 Ⅲ족 질화물 장치를 제조하는 방법과 이 방법으로 제조된장치
US7260130B2 (en) 2003-03-31 2007-08-21 Sanyo Electric Co., Ltd. Semiconductor laser device and method of fabricating the same
US7067407B2 (en) 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7026755B2 (en) 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
EP1658642B1 (en) 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7160380B2 (en) 2003-09-22 2007-01-09 Fuji Photo Film Co., Ltd. Organic pigment fine-particle, and method of producing the same
US7122827B2 (en) 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7119372B2 (en) 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7009215B2 (en) 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
DE60341314C5 (de) 2003-12-09 2023-03-23 The Regents Of The University Of California Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung
US7256879B2 (en) 2003-12-11 2007-08-14 Corning Incorporated Semiconductor array tester
TWI229463B (en) 2004-02-02 2005-03-11 South Epitaxy Corp Light-emitting diode structure with electro-static discharge protection
US20050205215A1 (en) 2004-03-17 2005-09-22 General Electric Company Apparatus for the evaporation of aqueous organic liquids and the production of powder pre-forms in flame hydrolysis processes
US7285801B2 (en) 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
WO2005104767A2 (en) * 2004-04-27 2005-11-10 Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Method to synthesize highly luminescent doped metal nitride powders
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP5014804B2 (ja) 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
EP2733744A1 (en) 2004-06-30 2014-05-21 Seoul Viosys Co., Ltd Light emitting element comprising a plurality of vertical-type LEDs connected in series on the same carrier substrate
WO2006010075A1 (en) 2004-07-09 2006-01-26 Cornell Research Foundation, Inc. Method of making group iii nitrides
JP2006052123A (ja) * 2004-07-12 2006-02-23 Sumitomo Electric Ind Ltd ｎ型ＡｌＮ結晶、ｎ型ＡｌＧａＮ固溶体及びそれらの製造方法
US7288679B2 (en) 2004-08-06 2007-10-30 Agfa-Gevaert Device provided with a dedicated dye compound
TWI241036B (en) 2004-08-18 2005-10-01 Formosa Epitaxy Inc GaN LED structure with enhanced light emitting luminance
WO2006019098A1 (ja) 2004-08-20 2006-02-23 Mitsubishi Chemical Corporation 金属窒化物および金属窒化物の製造方法
JP2006086516A (ja) 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
JP5023451B2 (ja) * 2004-08-25 2012-09-12 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、シリコン単結晶育成方法
TWI279752B (en) * 2004-09-21 2007-04-21 Casio Computer Co Ltd Transistor array substrate, display panel and manufacturing method of display panel
JP2006103998A (ja) * 2004-10-01 2006-04-20 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物多結晶およびその製造方法ならびにｉｉｉ族窒化物単結晶およびその製造方法
JP4880456B2 (ja) 2004-11-22 2012-02-22 パナソニック株式会社 窒素化合物系半導体装置およびその製造方法
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7527742B2 (en) 2005-06-27 2009-05-05 Momentive Performance Materials Inc. Etchant, method of etching, laminate formed thereby, and device
JP2006182596A (ja) * 2004-12-27 2006-07-13 Matsushita Electric Ind Co Ltd Ｉｉｉ族元素窒化物結晶の製造方法、それにより得られるｉｉｉ族元素窒化物結晶、ならびにそれを含む半導体装置
US7646033B2 (en) 2005-01-11 2010-01-12 Semileds Corporation Systems and methods for producing white-light light emitting diodes
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7358542B2 (en) 2005-02-02 2008-04-15 Lumination Llc Red emitting phosphor materials for use in LED and LCD applications
US7535028B2 (en) 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
US7316746B2 (en) 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
JP5010108B2 (ja) 2005-03-25 2012-08-29 株式会社沖データ 半導体複合装置、プリントヘッド、及びそれを用いた画像形成装置
JP4735949B2 (ja) 2005-04-08 2011-07-27 日立電線株式会社 Ｉｉｉ−ｖ族窒化物半導体結晶の製造方法およびｉｉｉ−ｖ族窒化物半導体基板の製造方法
US7329371B2 (en) 2005-04-19 2008-02-12 Lumination Llc Red phosphor for LED based lighting
JP4636501B2 (ja) 2005-05-12 2011-02-23 株式会社沖データ 半導体装置、プリントヘッド及び画像形成装置
TWI377602B (en) 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
US8148713B2 (en) 2008-04-04 2012-04-03 The Regents Of The University Of California Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
TWI394871B (zh) 2005-07-01 2013-05-01 Mitsubishi Chem Corp 使用超臨界溶劑之結晶製造方法
JP5023312B2 (ja) 2005-07-01 2012-09-12 三菱化学株式会社 超臨界溶媒を用いた結晶製造方法、結晶成長装置、結晶およびデバイス
KR20080040709A (ko) 2005-07-13 2008-05-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 질화물 박막들의 결함 감소를 위한 측방향 성장방법
US7638818B2 (en) 2005-09-07 2009-12-29 Cree, Inc. Robust transistors with fluorine treatment
JP2007080896A (ja) 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子
US20070096239A1 (en) 2005-10-31 2007-05-03 General Electric Company Semiconductor devices and methods of manufacture
JP4720441B2 (ja) * 2005-11-02 2011-07-13 日立電線株式会社 青色発光ダイオード用ＧａＮ基板
WO2007060944A1 (ja) * 2005-11-22 2007-05-31 Chubu Chelest Co., Ltd. 金属窒化物の製法
JP4631681B2 (ja) * 2005-12-05 2011-02-16 日立電線株式会社 窒化物系半導体基板及び半導体装置
JP4696886B2 (ja) 2005-12-08 2011-06-08 日立電線株式会社 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法
JP5191650B2 (ja) 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR101351498B1 (ko) * 2005-12-20 2014-01-15 모멘티브 퍼포먼스 머티리얼즈 인크. 결정성 조성물, 소자 및 관련 방법
US8039412B2 (en) * 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US7935382B2 (en) * 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
JP4978009B2 (ja) 2006-01-16 2012-07-18 ソニー株式会社 ＧａＮ系半導体発光素子及びその製造方法
JP5684455B2 (ja) 2006-02-10 2015-03-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法
EP1984545A4 (en) 2006-02-17 2013-05-15 Univ California PROCESS FOR THE GROWTH OF SEMIPOLARS (AL, IN, GA, B) N OPTOELECTRONIC COMPONENTS
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
ATE435584T1 (de) 2006-02-24 2009-07-15 Sefar Ag Flächenheizelement und verfahren zur herstellung eines flächenheizelementes
JP4647525B2 (ja) 2006-03-20 2011-03-09 日本碍子株式会社 Ｉｉｉ族窒化物結晶の製造方法
KR100765075B1 (ko) 2006-03-26 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광 소자 및 그 제조방법
JP4811082B2 (ja) * 2006-03-29 2011-11-09 住友電気工業株式会社 ｎ型ＡｌＮ結晶及びその製造方法
JP2009533303A (ja) 2006-04-07 2009-09-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 大表面積窒化ガリウム結晶の成長
JP4797793B2 (ja) * 2006-05-23 2011-10-19 三菱化学株式会社 窒化物半導体結晶の製造方法
JP4854566B2 (ja) 2006-06-15 2012-01-18 シャープ株式会社 窒化物半導体発光素子の製造方法および窒化物半導体発光素子
CN101485000B (zh) 2006-06-23 2012-01-11 Lg电子株式会社 具有垂直拓扑的发光二极管及其制造方法
JP2008115068A (ja) * 2006-06-30 2008-05-22 Tama Tlo Kk 窒化アルミニウム含有物の製造方法
US7952109B2 (en) 2006-07-10 2011-05-31 Alcatel-Lucent Usa Inc. Light-emitting crystal structures
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
US7705276B2 (en) 2006-09-14 2010-04-27 Momentive Performance Materials Inc. Heater, apparatus, and associated method
JP4246242B2 (ja) 2006-09-27 2009-04-02 三菱電機株式会社 半導体発光素子
JP4760652B2 (ja) * 2006-10-03 2011-08-31 三菱化学株式会社 Ｇａ含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法
US7714348B2 (en) 2006-10-06 2010-05-11 Ac-Led Lighting, L.L.C. AC/DC light emitting diodes with integrated protection mechanism
US7642122B2 (en) 2006-10-08 2010-01-05 Momentive Performance Materials Inc. Method for forming nitride crystals
TWI371870B (en) 2006-11-08 2012-09-01 Epistar Corp Alternate current light-emitting device and fabrication method thereof
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
CA2670280A1 (en) * 2006-11-21 2008-11-06 Amyris Biotechnologies, Inc. Jet fuel compositions and methods of making and using same
US8742251B2 (en) 2006-12-20 2014-06-03 Jds Uniphase Corporation Multi-segment photovoltaic power converter with a center portion
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
US7839903B2 (en) 2007-02-12 2010-11-23 The Regents Of The University Of California Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
KR101239853B1 (ko) 2007-03-13 2013-03-06 서울옵토디바이스주식회사 교류용 발광 다이오드
KR100974923B1 (ko) 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
JP2008311640A (ja) 2007-05-16 2008-12-25 Rohm Co Ltd 半導体レーザダイオード
JP4614988B2 (ja) 2007-05-31 2011-01-19 シャープ株式会社 窒化物系半導体レーザ素子及びその製造方法
US7572425B2 (en) 2007-09-14 2009-08-11 General Electric Company System and method for producing solar grade silicon
US8058663B2 (en) 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
US20110017298A1 (en) 2007-11-14 2011-01-27 Stion Corporation Multi-junction solar cell devices
CN101874307B (zh) 2007-11-30 2014-06-18 加利福尼亚大学董事会 通过表面粗糙化的高光提取效率的基于氮化物的发光二极管
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8303710B2 (en) 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100006873A1 (en) 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
WO2010005914A1 (en) 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US20120000415A1 (en) 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
WO2010017148A1 (en) 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
KR101332794B1 (ko) 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US20100117118A1 (en) 2008-08-07 2010-05-13 Dabiran Amir M High electron mobility heterojunction device
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US20100031873A1 (en) 2008-08-07 2010-02-11 Soraa, Inc. Basket process and apparatus for crystalline gallium-containing nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US20100295088A1 (en) 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
JP2012507874A (ja) 2008-10-31 2012-03-29 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性または半極性ＡｌＩｎＮおよびＡｌＩｎＧａＮ合金に基づく光電子デバイス
US8062916B2 (en) 2008-11-06 2011-11-22 Koninklijke Philips Electronics N.V. Series connected flip chip LEDs with growth substrate removed
US20100147210A1 (en) 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8048225B2 (en) 2009-01-29 2011-11-01 Soraa, Inc. Large-area bulk gallium nitride wafer and method of manufacture
US20110100291A1 (en) 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US7759710B1 (en) 2009-05-05 2010-07-20 Chang Gung University Oxidized low density lipoprotein sensing device for gallium nitride process
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8203161B2 (en) 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
JP5251893B2 (ja) 2010-01-21 2013-07-31 日立電線株式会社 導電性ｉｉｉ族窒化物結晶の製造方法及び導電性ｉｉｉ族窒化物基板の製造方法
US20120007102A1 (en) 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
US10145021B2 (en) 2010-07-28 2018-12-04 Slt Technologies, Inc. Apparatus for processing materials at high temperatures and pressures
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films

Also Published As

Publication number Publication date
JP2012512119A (ja) 2012-05-31
US8461071B2 (en) 2013-06-11
US20100151194A1 (en) 2010-06-17
CN102282298B (zh) 2015-05-13
CN102282298A (zh) 2011-12-14
JP2014114210A (ja) 2014-06-26
WO2010068916A1 (en) 2010-06-17
CN104846439A (zh) 2015-08-19
JP5476637B2 (ja) 2014-04-23

Similar Documents

Publication Publication Date Title
SG10201508015RA (en) Composition and process for selectively etching metal nitrides
IL202664A (en) Processes for Preparation of 3-Dihlomethyl-1-Methyl-1H-Pyrazole-4-Carbaldehyde and Intermediates
PL2519100T3 (pl) Związki pośrednie i sposoby wytwarzania tapentadolu i pokrewnych związków
ZA201202504B (en) Process for the preparation of calcobutrol
EP2411465A4 (en) PROCESS FOR PREPARING A HETEROPHASIC COPOLYMER AND USES THEREOF
AP2011005914A0 (en) New crystalline form VI of agomelatine, preparation method and application thereof.
PL2333122T3 (pl) Stop aluminium i metoda jego produkcji
WO2010056656A3 (en) Preparation of crystalline palonosetron hydrochloride
SI1976960T1 (sl) Postopek za pripravo biodizla
EP2594933A4 (en) Polycrystalline silicon rod and production method for polycrystalline silicon rod
IL219913A (en) A process for preparing tapentadol and its intermediates
PL2344489T3 (pl) Sposób otrzymywania winpocetyny i apowinkaminy
IL215980A (en) An intermediate substance of Artemnam, a preparation containing it and methods for its preparation
SI2044099T1 (sl) Postopek priprave S-fluorometil-6,9-difluoro-11-hidroksi-16-metil-17-propioniloksi-3-okso -androsta-1,4-dien-17-karbotioata in vmesnih spojin
IL209152A (en) Methanolic solvate of 2-cyano-2-deoxy-n4-palmitual-1-beta-d-arabinoporenecylcytocin, its crystalline form and processes for its preparation
PT2443227T (pt) Levedura, método de preparação, composição, equipamento e utilizações
TWI371481B (en) Slurry composition and method of fabricating damascene structure using the same
PL2285780T3 (pl) Sposoby i związki do wytwarzania normorfinanów
TWM373946U (en) Improved metal clapboards
EG27000A (en) Process for the preparation of ibodutant (MEN15596) and related intermediates
SI2325412T1 (sl) Sponka, prednostno iz kovine
PL385349A1 (pl) Nawóz organiczno-mineralny i sposób otrzymywania nawozu organiczno-mineralnego
PL2658860T3 (pl) Alkiloarenometale i sposoby ich wytwarzania
GB0805670D0 (en) Increasing the plasticity of stem cells
PL388491A1 (pl) Chiralny hydroksykarbaminian dimetylocyklopropanu i sposób jego wytwarzania