PL396936A1 - Nanokrystaliczna warstwa ZnIrSiO oraz sposób wytwarzania tej warstwy - Google Patents
Nanokrystaliczna warstwa ZnIrSiO oraz sposób wytwarzania tej warstwyInfo
- Publication number
- PL396936A1 PL396936A1 PL396936A PL39693611A PL396936A1 PL 396936 A1 PL396936 A1 PL 396936A1 PL 396936 A PL396936 A PL 396936A PL 39693611 A PL39693611 A PL 39693611A PL 396936 A1 PL396936 A1 PL 396936A1
- Authority
- PL
- Poland
- Prior art keywords
- layer
- znirsio
- target
- preparation
- producing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000011701 zinc Substances 0.000 abstract 3
- 229910052741 iridium Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Przedmiotem wynalazku jest przezroczysta nanokrystaliczna pólprzewodnikowa warstwa ZnIrSiO o przewodnictwie typu p i sposób wytwarzania tej warstwy. W warstwie tej zawartosc krzemu wynosi 25-35% at., zawartosc tlenu 55-65% at., zas proporcja atomowa irydu do cynku wynosi 2,5-3,5. Sposób wytwarzania tej warstwy polega na tym, ze najpierw z targetów jednoskladnikowych Zn, Ir, Si sporzadza sie metoda rozpylania katodowego target Ir/Zn/Si/Ir, który wygrzewa sie przez co najmniej 30 minut w temperaturze ? 400°C. Nastepnie z takiego targetu, za pomoca reaktywnego rozpylania katodowego w atmosferze argonowo-tlenowej, osadza sie na wybranym podlozu warstwe ZnIrSiO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL396936A PL219948B1 (pl) | 2011-11-09 | 2011-11-09 | Nanokrystaliczna warstwa ZnIrSiO oraz sposób wytwarzania tej warstwy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL396936A PL219948B1 (pl) | 2011-11-09 | 2011-11-09 | Nanokrystaliczna warstwa ZnIrSiO oraz sposób wytwarzania tej warstwy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL396936A1 true PL396936A1 (pl) | 2013-05-13 |
| PL219948B1 PL219948B1 (pl) | 2015-08-31 |
Family
ID=48522630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL396936A PL219948B1 (pl) | 2011-11-09 | 2011-11-09 | Nanokrystaliczna warstwa ZnIrSiO oraz sposób wytwarzania tej warstwy |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL219948B1 (pl) |
-
2011
- 2011-11-09 PL PL396936A patent/PL219948B1/pl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL219948B1 (pl) | 2015-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LICE | Declarations of willingness to grant licence |
Effective date: 20150108 |