PL398151A1 - Method for preparing a silicon carbide substrate for the growth of epitaxial layers, especially SiC and graphene - Google Patents
Method for preparing a silicon carbide substrate for the growth of epitaxial layers, especially SiC and grapheneInfo
- Publication number
- PL398151A1 PL398151A1 PL398151A PL39815112A PL398151A1 PL 398151 A1 PL398151 A1 PL 398151A1 PL 398151 A PL398151 A PL 398151A PL 39815112 A PL39815112 A PL 39815112A PL 398151 A1 PL398151 A1 PL 398151A1
- Authority
- PL
- Poland
- Prior art keywords
- epitaxial layers
- growth
- graphene
- silicon carbide
- preparing
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 4
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 2
- 229910021389 graphene Inorganic materials 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 229910003465 moissanite Inorganic materials 0.000 title abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000029087 digestion Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Przedmiotem wynalazku jest sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza warstw epitaksjalnych SiC lub grafenu, charakteryzuje sie tym, ze obejmuje etapy: a. nagrzewania podloza do temperatury 1600°C, b. trawienia podloza w atmosferze wodoru w reaktorze. The subject of the invention is a method of preparing silicon carbide substrates for the growth of epitaxial layers, especially SiC or graphene epitaxial layers, characterized by the following stages: a. Heating the substrate to a temperature of 1600 ° C, b. Digestion of the substrate in a hydrogen atmosphere in the reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL398151A PL398151A1 (en) | 2012-02-17 | 2012-02-17 | Method for preparing a silicon carbide substrate for the growth of epitaxial layers, especially SiC and graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL398151A PL398151A1 (en) | 2012-02-17 | 2012-02-17 | Method for preparing a silicon carbide substrate for the growth of epitaxial layers, especially SiC and graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL398151A1 true PL398151A1 (en) | 2013-08-19 |
Family
ID=48951773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL398151A PL398151A1 (en) | 2012-02-17 | 2012-02-17 | Method for preparing a silicon carbide substrate for the growth of epitaxial layers, especially SiC and graphene |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL398151A1 (en) |
-
2012
- 2012-02-17 PL PL398151A patent/PL398151A1/en unknown
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