PL398151A1 - Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu - Google Patents

Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu

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Publication number
PL398151A1
PL398151A1 PL398151A PL39815112A PL398151A1 PL 398151 A1 PL398151 A1 PL 398151A1 PL 398151 A PL398151 A PL 398151A PL 39815112 A PL39815112 A PL 39815112A PL 398151 A1 PL398151 A1 PL 398151A1
Authority
PL
Poland
Prior art keywords
epitaxial layers
graphene
silicon carbide
preparation
especially sic
Prior art date
Application number
PL398151A
Other languages
English (en)
Inventor
Wlodzimierz Strupinski
Kinga Kościewicz
Original Assignee
Isos Technologies Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isos Technologies Sarl filed Critical Isos Technologies Sarl
Priority to PL398151A priority Critical patent/PL398151A1/pl
Publication of PL398151A1 publication Critical patent/PL398151A1/pl

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Przedmiotem wynalazku jest sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza warstw epitaksjalnych SiC lub grafenu, charakteryzuje sie tym, ze obejmuje etapy: a. nagrzewania podloza do temperatury 1600°C, b. trawienia podloza w atmosferze wodoru w reaktorze.
PL398151A 2012-02-17 2012-02-17 Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu PL398151A1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL398151A PL398151A1 (pl) 2012-02-17 2012-02-17 Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL398151A PL398151A1 (pl) 2012-02-17 2012-02-17 Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu

Publications (1)

Publication Number Publication Date
PL398151A1 true PL398151A1 (pl) 2013-08-19

Family

ID=48951773

Family Applications (1)

Application Number Title Priority Date Filing Date
PL398151A PL398151A1 (pl) 2012-02-17 2012-02-17 Sposób przygotowania podloza z weglika krzemu do wzrostu warstw epitaksjalnych, zwlaszcza SiC i grafenu

Country Status (1)

Country Link
PL (1) PL398151A1 (pl)

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