PL403813A1 - Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate - Google Patents
Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gateInfo
- Publication number
- PL403813A1 PL403813A1 PL403813A PL40381313A PL403813A1 PL 403813 A1 PL403813 A1 PL 403813A1 PL 403813 A PL403813 A PL 403813A PL 40381313 A PL40381313 A PL 40381313A PL 403813 A1 PL403813 A1 PL 403813A1
- Authority
- PL
- Poland
- Prior art keywords
- transistor
- gate
- emitter
- collector
- thermal resistance
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000005259 measurement Methods 0.000 abstract 3
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Sposób pomiaru rezystancji termicznej tranzystora bipolarnego mocy z izolowaną bramką realizowany w trzech etapach pomiaru charakteryzuje się tym, że w charakterze parametru termoczułego jest wykorzystywane napięcie między wyprowadzeniami bramki i emitera tranzystora. W pierwszym etapie jest wykonywana kalibracja charakterystyki termometrycznej stanowiącej zależność parametru termoczułego od temperatury przy ustalonej wartości prądu kolektora i napięcia między wyprowadzeniami kolektora i emitera tranzystora. W drugim etapie pomiaru tranzystor pracuje w zakresie aktywnym i mierzone są współrzędne trzech punktów pracy tranzystora leżących na liniowym odcinku przy ustalonej zależności napięcia bramka-emiter od napięcia kolektor-emiter przy określonej wartości prądu kolektora. W trzecim etapie pomiaru rezystancja termiczna jest obliczana ze wzoru analitycznego. Układ do pomiaru rezystancji termicznej tranzystora bipolarnego mocy z izolowaną bramką, charakteryzuje się tym, że pierwszy zasilacz napięciowy(1)przez pierwszy rezystor (3) jest połączony z emiterem tranzystora (5) Drugi zasilacz napięciowy (2) szeregowo jest połączony z drugim rezystorem (4) oraz amperomierzem(6) zasilając kolektor tranzystora (5). Bramka tranzystora (5) jest połączona z masą układu, a pierwszy woltomierz (7) jest włączony między emiter a bramkę tranzystora (5), zaś drugi woltomierz (8) jest włączony między kolektor a bramkę tranzystora (5). Badany tranzystor umieszczony jest w termostacie (9).The method of measuring the thermal resistance of a bipolar power transistor with an isolated gate implemented in three stages of measurement is characterized by the fact that the voltage between the terminals of the gate and the emitter of the transistor is used as a thermosensitive parameter. In the first stage, the calibration of the thermometric characteristics is performed, which is the dependence of the thermosensitive parameter on the temperature at a set value of the collector current and voltage between the collector and emitter of the transistor. In the second stage of measurement, the transistor works in the active range and the coordinates of the three operating points of the transistor lying on a linear section are measured with a fixed relationship between gate-emitter voltage and collector-emitter voltage at a given collector current value. In the third stage of measurement, the thermal resistance is calculated from the analytical formula. The system for measuring the thermal resistance of a bipolar power transistor with an isolated gate is characterized by the fact that the first voltage supply (1) through the first resistor (3) is connected to the emitter of the transistor (5) The second voltage supply (2) is connected in series with the second resistor ( 4) and an ammeter (6) supplying the transistor collector (5). The transistor gate (5) is connected to the ground of the system, and the first voltmeter (7) is connected between the emitter and the transistor gate (5), while the second voltmeter (8) is connected between the collector and the transistor gate (5). The tested transistor is located in the thermostat (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL403813A PL224783B1 (en) | 2013-05-09 | 2013-05-09 | Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL403813A PL224783B1 (en) | 2013-05-09 | 2013-05-09 | Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL403813A1 true PL403813A1 (en) | 2014-11-10 |
| PL224783B1 PL224783B1 (en) | 2017-01-31 |
Family
ID=51866461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL403813A PL224783B1 (en) | 2013-05-09 | 2013-05-09 | Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL224783B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114384385A (en) * | 2021-12-03 | 2022-04-22 | 南方电网科学研究院有限责任公司 | Method for testing thermal resistance of IGBT (insulated Gate Bipolar transistor) of crimping type power module |
-
2013
- 2013-05-09 PL PL403813A patent/PL224783B1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114384385A (en) * | 2021-12-03 | 2022-04-22 | 南方电网科学研究院有限责任公司 | Method for testing thermal resistance of IGBT (insulated Gate Bipolar transistor) of crimping type power module |
Also Published As
| Publication number | Publication date |
|---|---|
| PL224783B1 (en) | 2017-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103822731B (en) | A kind of method of testing of VDMOS device junction temperature | |
| CN107783022B (en) | Thermal Reliability Evaluation Method for High Electron Mobility Transistors | |
| CN107833840B (en) | Junction Temperature Testing Method of AlGaN/GaN High Electron Mobility Transistor | |
| Blackburn et al. | Power MOSFET temperature measurements | |
| CN106501699B (en) | A real-time measurement method of bipolar transistor junction temperature in saturation state | |
| CN103941172B (en) | Semiconductor test apparatus and method of testing | |
| CN105371991B (en) | Temperature sensor chip test device and test method | |
| CN106771942A (en) | Bipolar transistor is operated in the junction temperature method for real-time measurement of amplification region | |
| CN103954899B (en) | A kind of method of real-time measuring diode transient temperature rise | |
| CN107024294B (en) | Multi-channel chip temperature measuring circuit and method | |
| CN103050423A (en) | Wafer temperature detection method | |
| CN204536413U (en) | A kind of IGBT collector voltage metering circuit | |
| PL403813A1 (en) | Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate | |
| CN107576422A (en) | A kind of method of on-line measurement bipolar transistor device junction temperature | |
| CN203908700U (en) | Platinum resistor temperature measuring circuit | |
| CN102520753B (en) | Equivalent circuit with Schottky diode | |
| CN203479427U (en) | Multichannel temperature inspection instrument calibrating device | |
| CN103575304A (en) | Hall effect sensor working temperature compensation circuit | |
| CN108121378B (en) | Intelligent temperature control circuit with temperature control point capable of being adjusted and adjustment method | |
| Farkas et al. | Thermal Transient Measurements on Various Electronic Components | |
| RU2523121C1 (en) | Source of reference voltage | |
| PL424110A1 (en) | Method and the system for measuring own and reciprocal thermal resistances in the electrically insulated module | |
| RU2547882C2 (en) | Method to measure medium temperature | |
| CN202548229U (en) | Device for measuring light-emitting diode (LED) ideality factor | |
| PL402223A1 (en) | Method and system for measuring the choke's own and mutual thermal resistance |