PL407110A1 - Method for producing 3C-SiC carburized case on the Si substrate - Google Patents

Method for producing 3C-SiC carburized case on the Si substrate

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Publication number
PL407110A1
PL407110A1 PL407110A PL40711014A PL407110A1 PL 407110 A1 PL407110 A1 PL 407110A1 PL 407110 A PL407110 A PL 407110A PL 40711014 A PL40711014 A PL 40711014A PL 407110 A1 PL407110 A1 PL 407110A1
Authority
PL
Poland
Prior art keywords
flow
substrate
sic
layer
hydrogen
Prior art date
Application number
PL407110A
Other languages
Polish (pl)
Inventor
Włodzimierz Strupiński
Dominika Teklińska
Original Assignee
Instytut Technologii Materiałów Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Technologii Materiałów Elektronicznych filed Critical Instytut Technologii Materiałów Elektronicznych
Priority to PL407110A priority Critical patent/PL407110A1/en
Publication of PL407110A1 publication Critical patent/PL407110A1/en

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Abstract

Przedmiotem wynalazku jest sposób wytwarzania warstwy nawęglonej 3C-SiC na podłożu Si przez chemiczne osadzanie z fazy gazowej w reaktorze, obejmujący następujące kroki: a. trawienia podłoża Si w przepływie wodoru; b. nawęglania w przepływie wodoru i prekursora węgla z wytworzeniem warstwy 3C-SiC na podłożu Si; c. wygrzewania warstwy 3C-SiC w przepływie wodoru. Sposób charakteryzuje się tym, że krok wygrzewania następuje bezpośrednio po kroku nawęglania, zasadniczo w tych samych warunkach temperaturowych co krok nawęglania, przy czym w kroku wygrzewania jednocześnie z przepływem wodoru stosuje się przepływ prekursora krzemu i steruje się przepływem wodoru i przepływem prekursora krzemu tak, aby nad powierzchnią warstwy 3C-SiC na podłożu Si otrzymać warstwę "stojących" gazów o przepływie lateralnym, ukierunkowanym na poziomie makroskopowym (ang. "stagnant layer") i zatrzymać sublimację Si z warstwy 3C-SiC.The present invention relates to a method for producing a 3C-SiC carburized layer on an Si substrate by chemical vapor deposition in a reactor, comprising the following steps: a. Etching the Si substrate in a flow of hydrogen; b. carburizing in a flow of hydrogen and carbon precursor to form a 3C-SiC layer on a Si substrate; c. heating of 3C-SiC layer in hydrogen flow. The method is characterized in that the soaking step occurs immediately after the carburizing step, essentially under the same temperature conditions as the carburizing step, with the silicon precursor flow being used simultaneously with the hydrogen flow and the hydrogen flow and silicon precursor flow being controlled so that above the surface of the 3C-SiC layer on the Si substrate, obtain a layer of "standing" gases with a lateral flow, oriented at the macroscopic level (ang. "stagnant layer") and stop Si sublimation from the 3C-SiC layer.

PL407110A 2014-02-07 2014-02-07 Method for producing 3C-SiC carburized case on the Si substrate PL407110A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL407110A PL407110A1 (en) 2014-02-07 2014-02-07 Method for producing 3C-SiC carburized case on the Si substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL407110A PL407110A1 (en) 2014-02-07 2014-02-07 Method for producing 3C-SiC carburized case on the Si substrate

Publications (1)

Publication Number Publication Date
PL407110A1 true PL407110A1 (en) 2015-08-17

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ID=53786645

Family Applications (1)

Application Number Title Priority Date Filing Date
PL407110A PL407110A1 (en) 2014-02-07 2014-02-07 Method for producing 3C-SiC carburized case on the Si substrate

Country Status (1)

Country Link
PL (1) PL407110A1 (en)

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