PL409931A1 - Photovoltaic dye cell and method for producing it - Google Patents
Photovoltaic dye cell and method for producing itInfo
- Publication number
- PL409931A1 PL409931A1 PL409931A PL40993114A PL409931A1 PL 409931 A1 PL409931 A1 PL 409931A1 PL 409931 A PL409931 A PL 409931A PL 40993114 A PL40993114 A PL 40993114A PL 409931 A1 PL409931 A1 PL 409931A1
- Authority
- PL
- Poland
- Prior art keywords
- layer
- zno
- producing
- meh
- hfp
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 8
- 239000011787 zinc oxide Substances 0.000 abstract 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 150000003304 ruthenium compounds Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Hybrid Cells (AREA)
Abstract
Ogniwo fotowoltaiczne charakteryzuje się tym, że materiał transportujący dziury stanowi wielowarstwowe pokrycie PVDF-HFP/MEH-PPV, natomiast półprzewodnikiem typu n oddalającym elektrony do zewnętrznego obwodu jest nanokrystaliczny tlenek cynku. Sposób wytworzenia ogniwa polega na tym, że nanosi się metodą atomowego osadzania warstw nanokrystaliczną warstwę ZnO o grubości 0,5 - 4µm na komercyjne podłoże szklane z warstwą TCO, przy czym warstwę ZnO wytwarza się przy użyciu prekursora dietylocynku oraz wody jako reagenta w temperaturze 200 - 400°C. Następnie nanosi się barwnik - komercyjny związek rutenu - przez zanurzenie płytki szklanej z naniesioną warstwą ZnO w ciekłym roztworze barwnika z alkoholem etylowym, po czym osadza się warstwy PVDF-HFP oraz MEH-PPV z roztworu metodą wirową z prędkością obrotową podłoża w zakresie 1000 - 5000 obr/min., a na tak przygotowaną strukturę wielowarstwową naparowuje się kontakty metaliczne.Photovoltaic cell is characterized by the fact that the hole transporting material is a multilayer PVDF-HFP / MEH-PPV coating, while the n-type semiconductor moving the electrons to the outer circuit is nanocrystalline zinc oxide. The method of producing the cell consists in applying a nanocrystalline layer of ZnO with a thickness of 0.5 - 4µm by atomic layer deposition on a commercial glass substrate with a TCO layer, with the ZnO layer being prepared using a diethylzinc precursor and water as a reactant at a temperature of 200 - 400 ° C. Next, the dye - a commercial ruthenium compound - is applied by dipping a glass plate with a ZnO layer in a liquid dye solution with ethyl alcohol, and then PVDF-HFP and MEH-PPV layers are deposited from the solution by vortex method with a substrate rotational speed in the range of 1000 - 5000 rpm, and metallic contacts are deposited on the multilayer structure thus prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL409931A PL229752B1 (en) | 2014-10-27 | 2014-10-27 | Photovoltaic dye cell and method for producing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL409931A PL229752B1 (en) | 2014-10-27 | 2014-10-27 | Photovoltaic dye cell and method for producing it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL409931A1 true PL409931A1 (en) | 2016-05-09 |
| PL229752B1 PL229752B1 (en) | 2018-08-31 |
Family
ID=55910472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL409931A PL229752B1 (en) | 2014-10-27 | 2014-10-27 | Photovoltaic dye cell and method for producing it |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL229752B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL241410B1 (en) * | 2019-02-11 | 2022-09-26 | Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie | Method for producing powder kesterite of Cu₂SnZnS₄ type |
| PL241416B1 (en) * | 2019-02-11 | 2022-09-26 | Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie | Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells |
-
2014
- 2014-10-27 PL PL409931A patent/PL229752B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL229752B1 (en) | 2018-08-31 |
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