PL412250A1 - Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego - Google Patents

Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

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Publication number
PL412250A1
PL412250A1 PL412250A PL41225015A PL412250A1 PL 412250 A1 PL412250 A1 PL 412250A1 PL 412250 A PL412250 A PL 412250A PL 41225015 A PL41225015 A PL 41225015A PL 412250 A1 PL412250 A1 PL 412250A1
Authority
PL
Poland
Prior art keywords
layer
photovoltaic cell
zno
znmgo
producing
Prior art date
Application number
PL412250A
Other languages
English (en)
Other versions
PL229128B1 (pl
Inventor
Sylwia Gierałtowska
Marek Godlewski
Rafał Pietruszka
Łukasz Wachnicki
Bartłomiej Witkowski
Original Assignee
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL412250A priority Critical patent/PL229128B1/pl
Priority to EP16730517.6A priority patent/EP3295490B1/en
Priority to PCT/PL2016/050016 priority patent/WO2016182465A1/en
Priority to US15/572,416 priority patent/US20180151770A1/en
Publication of PL412250A1 publication Critical patent/PL412250A1/pl
Publication of PL229128B1 publication Critical patent/PL229128B1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

Przedmiotem wynalazku jest struktura ogniwa fotowoltaicznego, posiadająca półprzewodnikowe podłoże typu p, ze spodnim kontaktem elektrycznym, na którym znajduje się warstwa zawierająca nanostruktury ZnO pokryte warstwą ZnMgO (5), a na niej przezroczysta warstwa przewodząca, korzystnie warstwa ZnO:Al, z kontaktem elektrycznym, charakteryzująca się tym, że warstwę aktywną stanowi złącze Si/ZnO/ZnMgO, przy czym warstwa nanostruktur ZnO o wysokości od 10 nm do 2000 nm jest przykryta warstwą ZnMgO o grubości co najmniej od 1 nm do 2000nm. Przedmiotem zgłoszenia jest również sposób wykonania struktury ogniwa fotowoltaicznego.
PL412250A 2015-05-08 2015-05-08 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego PL229128B1 (pl)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PL412250A PL229128B1 (pl) 2015-05-08 2015-05-08 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego
EP16730517.6A EP3295490B1 (en) 2015-05-08 2016-05-06 Photovoltaic cell structure and method to produce the same
PCT/PL2016/050016 WO2016182465A1 (en) 2015-05-08 2016-05-06 Photovoltaic cell structure and method to produce the same
US15/572,416 US20180151770A1 (en) 2015-05-08 2016-05-06 Photovoltaic cell structure and method to produce the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL412250A PL229128B1 (pl) 2015-05-08 2015-05-08 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

Publications (2)

Publication Number Publication Date
PL412250A1 true PL412250A1 (pl) 2016-11-21
PL229128B1 PL229128B1 (pl) 2018-06-29

Family

ID=56137490

Family Applications (1)

Application Number Title Priority Date Filing Date
PL412250A PL229128B1 (pl) 2015-05-08 2015-05-08 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

Country Status (4)

Country Link
US (1) US20180151770A1 (pl)
EP (1) EP3295490B1 (pl)
PL (1) PL229128B1 (pl)
WO (1) WO2016182465A1 (pl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3553829A1 (en) 2018-04-13 2019-10-16 Centrum Badan i Rozwoju Technologii dla Przemyslu S.A. A silicon photovoltaic cell and a method for manufacturing silicon photovoltaic cells
PL425218A1 (pl) * 2018-04-13 2019-10-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11427499B2 (en) 2017-11-29 2022-08-30 Pilkington Group Limited Process for depositing a layer
CN109585642A (zh) * 2018-11-06 2019-04-05 浙江海洋大学 一种基于pet/银纳米线/氧化锌镁/氧化锌镁纳米阵列的纳米发电机
CN109608219B (zh) * 2018-12-06 2022-01-28 五邑大学 一种耐弱酸腐蚀的多孔氧化物薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100180950A1 (en) * 2008-11-14 2010-07-22 University Of Connecticut Low-temperature surface doping/alloying/coating of large scale semiconductor nanowire arrays
PL407336A1 (pl) 2014-02-27 2015-08-31 Instytut Fizyki Polskiej Akademii Nauk Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3553829A1 (en) 2018-04-13 2019-10-16 Centrum Badan i Rozwoju Technologii dla Przemyslu S.A. A silicon photovoltaic cell and a method for manufacturing silicon photovoltaic cells
PL425218A1 (pl) * 2018-04-13 2019-10-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych

Also Published As

Publication number Publication date
EP3295490A1 (en) 2018-03-21
WO2016182465A1 (en) 2016-11-17
EP3295490B1 (en) 2020-03-18
PL229128B1 (pl) 2018-06-29
US20180151770A1 (en) 2018-05-31

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