PL4147277T3 - Ogniwo słoneczne z tylnym stykiem - Google Patents

Ogniwo słoneczne z tylnym stykiem

Info

Publication number
PL4147277T3
PL4147277T3 PL21715183.6T PL21715183T PL4147277T3 PL 4147277 T3 PL4147277 T3 PL 4147277T3 PL 21715183 T PL21715183 T PL 21715183T PL 4147277 T3 PL4147277 T3 PL 4147277T3
Authority
PL
Poland
Prior art keywords
solar cell
side contact
contact solar
cell
solar
Prior art date
Application number
PL21715183.6T
Other languages
English (en)
Inventor
Erik Hoffmann
Jürgen Werner
Original Assignee
EnPV GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EnPV GmbH filed Critical EnPV GmbH
Publication of PL4147277T3 publication Critical patent/PL4147277T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PL21715183.6T 2020-05-04 2021-03-22 Ogniwo słoneczne z tylnym stykiem PL4147277T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020111997.6A DE102020111997A1 (de) 2020-05-04 2020-05-04 Rückseitenkontaktierte Solarzelle
PCT/EP2021/057244 WO2021223932A1 (de) 2020-05-04 2021-03-22 Rückseitenkontaktierte solarzelle

Publications (1)

Publication Number Publication Date
PL4147277T3 true PL4147277T3 (pl) 2024-07-01

Family

ID=75277996

Family Applications (1)

Application Number Title Priority Date Filing Date
PL21715183.6T PL4147277T3 (pl) 2020-05-04 2021-03-22 Ogniwo słoneczne z tylnym stykiem

Country Status (22)

Country Link
US (1) US20230223483A1 (pl)
EP (1) EP4147277B1 (pl)
JP (1) JP2023527958A (pl)
KR (1) KR20230005821A (pl)
AU (1) AU2021268445A1 (pl)
CA (1) CA3172110A1 (pl)
CY (1) CY1126788T1 (pl)
DE (1) DE102020111997A1 (pl)
DK (1) DK4147277T3 (pl)
ES (1) ES2975536T3 (pl)
FI (1) FI4147277T3 (pl)
HR (1) HRP20240565T1 (pl)
HU (1) HUE066766T2 (pl)
LT (1) LT4147277T (pl)
MX (1) MX2022013553A (pl)
PL (1) PL4147277T3 (pl)
PT (1) PT4147277T (pl)
RS (1) RS65453B1 (pl)
SA (1) SA522441154B1 (pl)
SI (1) SI4147277T1 (pl)
TW (1) TW202143497A (pl)
WO (1) WO2021223932A1 (pl)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802486B2 (en) * 2011-04-25 2014-08-12 Sunpower Corporation Method of forming emitters for a back-contact solar cell
US10014425B2 (en) * 2012-09-28 2018-07-03 Sunpower Corporation Spacer formation in a solar cell using oxygen ion implantation
CN102856328B (zh) * 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
KR20140135881A (ko) * 2013-05-16 2014-11-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법
DE102013220753A1 (de) * 2013-10-15 2015-04-16 SolarWorld Industries Thüringen GmbH Solarzelle und Verfahren zu deren Herstellung
US9059341B1 (en) * 2014-01-23 2015-06-16 E I Du Pont De Nemours And Company Method for manufacturing an interdigitated back contact solar cell
KR101613846B1 (ko) * 2014-06-10 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9537041B2 (en) * 2014-06-27 2017-01-03 Sunpower Corporation Emitters of a backside contact solar cell
WO2017047311A1 (ja) * 2015-09-18 2017-03-23 シャープ株式会社 光電変換素子及びその製造方法
NL2016382B1 (en) * 2016-03-07 2017-09-19 Stichting Energieonderzoek Centrum Nederland Method for manufacturing a solar cell with doped polysilicon surface areas
CN110634964B (zh) 2019-09-26 2021-06-15 苏州腾晖光伏技术有限公司 一种高效晶硅太阳电池及其制备方法

Also Published As

Publication number Publication date
DE102020111997A1 (de) 2021-11-04
PT4147277T (pt) 2024-03-05
LT4147277T (lt) 2024-05-10
AU2021268445A1 (en) 2022-10-13
SI4147277T1 (sl) 2024-07-31
EP4147277B1 (de) 2024-02-28
MX2022013553A (es) 2022-11-30
CY1126788T1 (el) 2026-02-25
FI4147277T3 (fi) 2024-04-19
WO2021223932A1 (de) 2021-11-11
TW202143497A (zh) 2021-11-16
HUE066766T2 (hu) 2024-09-28
US20230223483A1 (en) 2023-07-13
JP2023527958A (ja) 2023-07-03
SA522441154B1 (ar) 2023-11-05
RS65453B1 (sr) 2024-05-31
CA3172110A1 (en) 2021-11-11
ES2975536T3 (es) 2024-07-08
DK4147277T3 (da) 2024-03-25
EP4147277A1 (de) 2023-03-15
KR20230005821A (ko) 2023-01-10
HRP20240565T1 (hr) 2024-07-19

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