PL4158695T3 - Ogniwo słoneczne i moduł ogniwa słonecznego - Google Patents

Ogniwo słoneczne i moduł ogniwa słonecznego

Info

Publication number
PL4158695T3
PL4158695T3 PL21732591.9T PL21732591T PL4158695T3 PL 4158695 T3 PL4158695 T3 PL 4158695T3 PL 21732591 T PL21732591 T PL 21732591T PL 4158695 T3 PL4158695 T3 PL 4158695T3
Authority
PL
Poland
Prior art keywords
solar
cells module
solar cell
solar cells
cell
Prior art date
Application number
PL21732591.9T
Other languages
English (en)
Inventor
Marcello Sciuto
Andrea CANINO
Giuseppe Condorelli
Cosimo Gerardi
Antonio TERRASI
Giacomo TORRISI
Anna Battaglia
Original Assignee
3Sun S.R.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3Sun S.R.L. filed Critical 3Sun S.R.L.
Publication of PL4158695T3 publication Critical patent/PL4158695T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
PL21732591.9T 2020-05-27 2021-05-27 Ogniwo słoneczne i moduł ogniwa słonecznego PL4158695T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT102020000012613A IT202000012613A1 (it) 2020-05-27 2020-05-27 Cella solare e modulo di celle solari
PCT/IT2021/050167 WO2021240569A1 (en) 2020-05-27 2021-05-27 Solar cell and solar cells module

Publications (1)

Publication Number Publication Date
PL4158695T3 true PL4158695T3 (pl) 2025-12-01

Family

ID=71994996

Family Applications (1)

Application Number Title Priority Date Filing Date
PL21732591.9T PL4158695T3 (pl) 2020-05-27 2021-05-27 Ogniwo słoneczne i moduł ogniwa słonecznego

Country Status (10)

Country Link
US (1) US12284842B2 (pl)
EP (1) EP4158695B1 (pl)
JP (1) JP2023527064A (pl)
CN (1) CN115769385A (pl)
AU (1) AU2021279452A1 (pl)
CA (1) CA3185056A1 (pl)
ES (1) ES3040617T3 (pl)
IT (1) IT202000012613A1 (pl)
PL (1) PL4158695T3 (pl)
WO (1) WO2021240569A1 (pl)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0733931B1 (en) * 1995-03-22 2003-08-27 Toppan Printing Co., Ltd. Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
EP2261995B1 (en) * 2008-03-19 2019-05-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell and method for manufacturing the same
JP5975841B2 (ja) * 2012-10-17 2016-08-23 三菱電機株式会社 光起電力素子の製造方法及び光起電力素子
EP2980861B1 (en) * 2013-03-28 2020-01-08 Panasonic Intellectual Property Management Co., Ltd. Solar cell
KR101821394B1 (ko) * 2016-01-14 2018-01-23 엘지전자 주식회사 태양전지
JP6697406B2 (ja) * 2016-01-21 2020-05-20 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
US11769851B2 (en) * 2016-02-25 2023-09-26 Newsouth Innovations Pty Limited Method and an apparatus for treating a surface of a TCO material, in a semiconductor device
EP3324448B1 (en) * 2016-11-17 2019-09-11 LG Electronics Inc. Solar cell panel
CN106784041A (zh) * 2017-02-04 2017-05-31 江苏神科新能源有限公司 一种硅基异质结太阳能电池及其制备方法
KR101919611B1 (ko) * 2017-09-08 2018-11-19 청주대학교 산학협력단 서브 마이크로미터 두께의 광 흡수층을 포함하는 투명 박막 태양전지 및 그 제조방법
CN108831968A (zh) * 2018-06-25 2018-11-16 张军 一种n型硅基太阳能电池及其制备方法
CN208655672U (zh) * 2018-08-02 2019-03-26 君泰创新(北京)科技有限公司 异质结太阳能电池

Also Published As

Publication number Publication date
IT202000012613A1 (it) 2021-11-27
US20230231062A1 (en) 2023-07-20
AU2021279452A1 (en) 2023-01-19
JP2023527064A (ja) 2023-06-26
EP4158695A1 (en) 2023-04-05
ES3040617T3 (en) 2025-11-03
WO2021240569A1 (en) 2021-12-02
CA3185056A1 (en) 2021-12-02
EP4158695B1 (en) 2025-08-13
US12284842B2 (en) 2025-04-22
CN115769385A (zh) 2023-03-07

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