PL417459A1 - Method for producing doped carbon layers on metallic layers by RF PACVD method - Google Patents

Method for producing doped carbon layers on metallic layers by RF PACVD method

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Publication number
PL417459A1
PL417459A1 PL417459A PL41745916A PL417459A1 PL 417459 A1 PL417459 A1 PL 417459A1 PL 417459 A PL417459 A PL 417459A PL 41745916 A PL41745916 A PL 41745916A PL 417459 A1 PL417459 A1 PL 417459A1
Authority
PL
Poland
Prior art keywords
layers
doped carbon
pacvd
producing doped
carbon layers
Prior art date
Application number
PL417459A
Other languages
Polish (pl)
Other versions
PL232687B1 (en
Inventor
Jacek Grabarczyk
Marian Cłapa
Piotr Niedzielski
Lidia Świątek
Dorota Bociąga
Małgorzata Czerniak-Reczulska
Original Assignee
Politechnika Łódzka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Łódzka filed Critical Politechnika Łódzka
Priority to PL417459A priority Critical patent/PL232687B1/en
Publication of PL417459A1 publication Critical patent/PL417459A1/en
Publication of PL232687B1 publication Critical patent/PL232687B1/en

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  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Przedmiotem zgłoszenia jest sposób wytwarzania domieszkowanych warstw węglowych na podłożach metalicznych metodą RF PACVD, charakteryzuje się tym, że w reaktorze plazmowo - chemicznym, w trakcie nanoszenia warstwy węglowej, prowadzi się równocześnie proces rozpylania materiału domieszki z dodatkowej elektrody wysokiej częstotliwości reaktora zasilanej potencjałem ujemnym z odrębnego źródła energii, w drodze bombardowania jonowego tej elektrody, wzbudzonego plazmą wysokiej częstotliwości.The subject of the application is a method of producing doped carbon layers on metallic substrates using the RF PACVD method, characterized by the fact that in the plasma-chemical reactor, during the application of the carbon layer, the process of atomizing the dopant material from an additional high-frequency electrode of the reactor fed with a negative potential is fed simultaneously energy sources by ion bombardment of this electrode, excited by high frequency plasma.

PL417459A 2016-06-07 2016-06-07 Method for producing doped carbon layers on metallic layers by RF PACVD method PL232687B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL417459A PL232687B1 (en) 2016-06-07 2016-06-07 Method for producing doped carbon layers on metallic layers by RF PACVD method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL417459A PL232687B1 (en) 2016-06-07 2016-06-07 Method for producing doped carbon layers on metallic layers by RF PACVD method

Publications (2)

Publication Number Publication Date
PL417459A1 true PL417459A1 (en) 2017-12-18
PL232687B1 PL232687B1 (en) 2019-07-31

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ID=60655690

Family Applications (1)

Application Number Title Priority Date Filing Date
PL417459A PL232687B1 (en) 2016-06-07 2016-06-07 Method for producing doped carbon layers on metallic layers by RF PACVD method

Country Status (1)

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PL (1) PL232687B1 (en)

Also Published As

Publication number Publication date
PL232687B1 (en) 2019-07-31

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