PL433156A1 - Method for producing large-diameter CdTe crystals - Google Patents

Method for producing large-diameter CdTe crystals

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Publication number
PL433156A1
PL433156A1 PL433156A PL43315620A PL433156A1 PL 433156 A1 PL433156 A1 PL 433156A1 PL 433156 A PL433156 A PL 433156A PL 43315620 A PL43315620 A PL 43315620A PL 433156 A1 PL433156 A1 PL 433156A1
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PL
Poland
Prior art keywords
temperature
producing large
rate
diameter
increased
Prior art date
Application number
PL433156A
Other languages
Polish (pl)
Other versions
PL243492B1 (en
Inventor
Andrzej Mycielski
Dominika Kochanowska
Marta Witkowska-Baran
Original Assignee
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL433156A priority Critical patent/PL243492B1/en
Publication of PL433156A1 publication Critical patent/PL433156A1/en
Publication of PL243492B1 publication Critical patent/PL243492B1/en

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Abstract

Przedmiotem wynalazku jest sposób wytwarzania kryształów na bazie CdTe o dużej średnicy, to znaczy o średnicy równej 3 całe lub większej i o wadze ponad 2,5 kg metodą Bridgman'a. Według sposobu, dobrze wymieszane, pierwiastki materiału wsadowego (Cd, Zn i Mg, Te, Mn) materiału wsadowego umieszcza się w ampule kwarcowej znajdującej się w poziomym piecu i prowadzi się proces termiczny. W pierwszej fazie procesu, do temperatury 350 – 380°C wzrost temperatury prowadzi się z szybkością 70 - 90°C/h, następnie zwalnia się szybkość grzania do 2 – 3°C/h. Po osiągnięciu przez ampułę temperatury 430 – 450°C, zatrzymuje się grzanie i temperaturę utrzymuje na tym poziomie przez co najmniej kilka godzin. Po tym czasie podnosi się temperaturę z szybkością ~10°C/h do temperatury 1090 - 1100°C, pionizuje się piec i prowadzi się w znany sposób dalszy proces krystalizacji.The present invention relates to a method for producing large diameter CdTe-based crystals, i.e. 3 or more in diameter and weighing more than 2.5 kg, by the Bridgman method. According to the method, the well mixed elements of the charge material (Cd, Zn and Mg, Te, Mn) of the charge material are placed in a quartz ampoule located in a horizontal furnace and the thermal process is carried out. In the first phase of the process, to the temperature of 350-380 ° C, the temperature is increased at the rate of 70-90 ° C / h, then the heating rate is slowed down to 2-3 ° C / h. After the ampoule has reached a temperature of 430-450 ° C, heating is stopped and the temperature is kept at this level for at least several hours. After this time, the temperature is increased at a rate of ~ 10 ° C / h to a temperature of 1090 - 1100 ° C, the furnace is verticalized and the further crystallization process is carried out in a known manner.

PL433156A 2020-03-05 2020-03-05 Method for producing large-diameter CdTe crystals PL243492B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL433156A PL243492B1 (en) 2020-03-05 2020-03-05 Method for producing large-diameter CdTe crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL433156A PL243492B1 (en) 2020-03-05 2020-03-05 Method for producing large-diameter CdTe crystals

Publications (2)

Publication Number Publication Date
PL433156A1 true PL433156A1 (en) 2021-09-06
PL243492B1 PL243492B1 (en) 2023-09-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
PL433156A PL243492B1 (en) 2020-03-05 2020-03-05 Method for producing large-diameter CdTe crystals

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PL (1) PL243492B1 (en)

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Publication number Publication date
PL243492B1 (en) 2023-09-04

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