PL441208A1 - Układ do ogrzewania podłoża krzemowego w komorze do epitaksji z wiązki molekularnej - Google Patents
Układ do ogrzewania podłoża krzemowego w komorze do epitaksji z wiązki molekularnejInfo
- Publication number
- PL441208A1 PL441208A1 PL441208A PL44120822A PL441208A1 PL 441208 A1 PL441208 A1 PL 441208A1 PL 441208 A PL441208 A PL 441208A PL 44120822 A PL44120822 A PL 44120822A PL 441208 A1 PL441208 A1 PL 441208A1
- Authority
- PL
- Poland
- Prior art keywords
- silicon substrate
- heating
- molecular beam
- beam epitaxy
- diode laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Układ do ogrzewania podłoża krzemowego (1) w komorze do epitaksji z wiązki molekularnej zawiera laser diodowy (2), którego wiązka laserowa (3) ogrzewa podłoże krzemowe (1). Układ zawiera ponadto pirometr (6) do pomiaru temperatury podłoża krzemowego (1), który to pirometr (6) jest podłączony do układu sterowania (4) lasera diodowego (2), przy czym układ sterowania (4) lasera diodowego (2) jest skonfigurowany do regulacji mocy wiązki (3) lasera diodowego (2) na podstawie odczytu temperatury z pirometru (6) w celu zapewnienia stabilnego, stałego poziomu temperatury podłoża krzemowego (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL441208A PL441208A1 (pl) | 2022-05-17 | 2022-05-17 | Układ do ogrzewania podłoża krzemowego w komorze do epitaksji z wiązki molekularnej |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL441208A PL441208A1 (pl) | 2022-05-17 | 2022-05-17 | Układ do ogrzewania podłoża krzemowego w komorze do epitaksji z wiązki molekularnej |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL441208A1 true PL441208A1 (pl) | 2023-11-20 |
Family
ID=88838728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL441208A PL441208A1 (pl) | 2022-05-17 | 2022-05-17 | Układ do ogrzewania podłoża krzemowego w komorze do epitaksji z wiązki molekularnej |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL441208A1 (pl) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201735A (ja) * | 1993-11-01 | 1995-08-04 | Hitachi Ltd | 化合物半導体の結晶成長方法 |
-
2022
- 2022-05-17 PL PL441208A patent/PL441208A1/pl unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201735A (ja) * | 1993-11-01 | 1995-08-04 | Hitachi Ltd | 化合物半導体の結晶成長方法 |
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