PL442496A1 - Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym - Google Patents

Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

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Publication number
PL442496A1
PL442496A1 PL442496A PL44249622A PL442496A1 PL 442496 A1 PL442496 A1 PL 442496A1 PL 442496 A PL442496 A PL 442496A PL 44249622 A PL44249622 A PL 44249622A PL 442496 A1 PL442496 A1 PL 442496A1
Authority
PL
Poland
Prior art keywords
sup
layer
bandgap
photovoltaic cell
energy level
Prior art date
Application number
PL442496A
Other languages
English (en)
Other versions
PL243315B1 (pl
Inventor
Paweł Węgierek
Justyna Pastuszak
Original Assignee
Politechnika Lubelska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Lubelska filed Critical Politechnika Lubelska
Priority to PL442496A priority Critical patent/PL243315B1/pl
Publication of PL442496A1 publication Critical patent/PL442496A1/pl
Publication of PL243315B1 publication Critical patent/PL243315B1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Przedmiotem zgłoszenia jest sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym (3) w paśmie zabronionym półprzewodnika (8), składającego się z warstwy krzemu typu p (2) i warstwy krzemu typu n (4), a także elektrody dolnej (1) i górnej (6) wraz z warstwą pasywującą powierzchnię i powłoką antyrefleksyjną (5), w którym teksturyzuje się, domieszkuje się metodą implantacji jonowej, wygrzewa się poimplantacyjnie i pasywuje, a następnie osadza się powłokę antyrefleksyjną i nanosi się elektrody oraz utwardza w piecu. Istotą sposobu jest to, że warstwę krzemu typu p (2), o rezystywności ρ od 0,01 Ω x cm, do 10 Ω x cm, korzystnie 0,4  Ω x cm, implantuje się jonami neonu o dawce D od 4,0 x 10<sup>13</sup> cm<sup>-2</sup> do 4,0 x 10<sup>14</sup> cm<sup>-2</sup>, korzystnie 2,2 x 10<sup>14</sup> cm<sup>-2</sup> i energii E 100 keV, a następnie wygrzewa izochronicznie w temperaturze T<sub>a</sub> = 598 K, w czasie t = 15 min.
PL442496A 2022-10-12 2022-10-12 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym PL243315B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL442496A PL243315B1 (pl) 2022-10-12 2022-10-12 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL442496A PL243315B1 (pl) 2022-10-12 2022-10-12 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Publications (2)

Publication Number Publication Date
PL442496A1 true PL442496A1 (pl) 2023-03-13
PL243315B1 PL243315B1 (pl) 2023-07-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PL442496A PL243315B1 (pl) 2022-10-12 2022-10-12 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Country Status (1)

Country Link
PL (1) PL243315B1 (pl)

Also Published As

Publication number Publication date
PL243315B1 (pl) 2023-07-31

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