PL443344A1 - Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym - Google Patents

Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

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Publication number
PL443344A1
PL443344A1 PL443344A PL44334422A PL443344A1 PL 443344 A1 PL443344 A1 PL 443344A1 PL 443344 A PL443344 A PL 443344A PL 44334422 A PL44334422 A PL 44334422A PL 443344 A1 PL443344 A1 PL 443344A1
Authority
PL
Poland
Prior art keywords
sup
layer
bandgap
photovoltaic cell
energy level
Prior art date
Application number
PL443344A
Other languages
English (en)
Other versions
PL245553B1 (pl
Inventor
Paweł Węgierek
Justyna Pastuszak
Original Assignee
Politechnika Lubelska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Lubelska filed Critical Politechnika Lubelska
Priority to PL443344A priority Critical patent/PL245553B1/pl
Publication of PL443344A1 publication Critical patent/PL443344A1/pl
Publication of PL245553B1 publication Critical patent/PL245553B1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H10F77/1215—Active materials comprising only selenium or only tellurium characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/902—Thermal treatments, e.g. annealing or sintering for the formation of PN junctions without addition of impurities

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  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Przedmiotem zgłoszenia jest sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym (3) w paśmie zabronionym półprzewodnika (8), składającego się z warstwy krzemu typu p (2) i warstwy krzemu typu n (4), a także elektrody dolnej (1) i górnej (6) wraz z warstwą pasywującą powierzchnię i powłoką antyrefleksyjną (5), w którym teksturyzuje się, domieszkuje się metodą implantacji jonowej, wygrzewa się poimplantacyjnie i pasywuje, a następnie osadza się powłokę antyrefleksyjną i nanosi się elektrody oraz utwardza w piecu. Istotą sposobu jest to, że warstwę krzemu typu n (4) domieszkowaną antymonem, o rezystywności ρ od 0,01 Ω x cm, do 10 Ω x cm, korzystnie 0,01  Ω x cm, implantuje się jonami neonu o dawce D od 10 x 10<sup>13</sup> cm<sup>-2</sup> do 4,0 x 10<sup>14</sup> cm<sup>-2</sup>, korzystnie 1,5 x 10<sup>14</sup> cm<sup>-2</sup> i energii E = 100 keV, a następnie wygrzewa izochronicznie w temperaturze T<sub>a</sub> = 598 K, w czasie t = 15 min.
PL443344A 2022-12-30 2022-12-30 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym PL245553B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL443344A PL245553B1 (pl) 2022-12-30 2022-12-30 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL443344A PL245553B1 (pl) 2022-12-30 2022-12-30 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Publications (2)

Publication Number Publication Date
PL443344A1 true PL443344A1 (pl) 2023-06-19
PL245553B1 PL245553B1 (pl) 2024-08-26

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PL443344A PL245553B1 (pl) 2022-12-30 2022-12-30 Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Country Status (1)

Country Link
PL (1) PL245553B1 (pl)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130657A2 (en) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
JP2003142705A (ja) * 2001-11-07 2003-05-16 Mitsubishi Heavy Ind Ltd 光起電力素子
WO2008057629A2 (en) * 2006-06-05 2008-05-15 The Board Of Trustees Of The University Of Illinois Photovoltaic and photosensing devices based on arrays of aligned nanostructures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130657A2 (en) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
JP2003142705A (ja) * 2001-11-07 2003-05-16 Mitsubishi Heavy Ind Ltd 光起電力素子
WO2008057629A2 (en) * 2006-06-05 2008-05-15 The Board Of Trustees Of The University Of Illinois Photovoltaic and photosensing devices based on arrays of aligned nanostructures

Also Published As

Publication number Publication date
PL245553B1 (pl) 2024-08-26

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