RU2004129683A - Тело, полученное спеканием, и его применение - Google Patents

Тело, полученное спеканием, и его применение Download PDF

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RU2004129683A
RU2004129683A RU2004129683/03A RU2004129683A RU2004129683A RU 2004129683 A RU2004129683 A RU 2004129683A RU 2004129683/03 A RU2004129683/03 A RU 2004129683/03A RU 2004129683 A RU2004129683 A RU 2004129683A RU 2004129683 A RU2004129683 A RU 2004129683A
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sintering
body obtained
nbo
mgo
solid electrolyte
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Кристоф ШНИТТЕР (DE)
Кристоф ШНИТТЕР
Герхард ВЕТТИНГ (DE)
Герхард ВЕТТИНГ
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Х.К. Штарк Гмбх (De)
Х.К. Штарк Гмбх
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    • H—ELECTRICITY
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Claims (21)

1. Тело, полученное спеканием, содержащее от 30 до 100 мол.% NbOx, где 0,5<x<1,5, и до 70 мол.% MgO.
2. Тело, полученное спеканием, по п.1, отличающееся тем, что оно содержит от 35 до 100 мол.% NbOx, где 0,5<х<1,5, и до 65 мол.% MgO.
3. Тело, полученное спеканием, по п.1, отличающееся тем, что оно содержит от 45 до 60 мол.% NbOx, где 0,5<х<1,5, и от 55 до 40 мол.% MgO.
4. Тело, полученное спеканием, по одному из пп.1-3, отличающееся тем, что содержащаяся в нем недоокись ниобия соответствует формуле NbOx, где 0,7<х<1,3.
5. Тело, полученное спеканием, по одному из пп.1-3, отличающееся тем, что его пористость составляет меньше 30% объема.
6. Тело, полученное спеканием, по п.4, отличающееся тем, что его пористость составляет меньше 30% объема.
7. Тело, полученное спеканием, по п.5, отличающееся тем, что его пористость составляет меньше 15% объема.
8. Тело, полученное спеканием, по п.6, отличающееся тем, что его пористость составляет меньше 15% объема.
9. Тело, полученное спеканием, по одному из пп.1-3, отличающееся тем, что оно имеет микроструктуру, включающую гомогенные области, богатые NbOx, и гомогенные области, богатые MgO, которые простираются чаще всего на 1,5 мкм, по крайней мере, в одном направлении.
10. Тело, полученное спеканием, по п.4, отличающееся тем, что оно имеет микроструктуру, включающую гомогенные области, богатые NbOx, и гомогенные области, богатые MgO, которые простираются чаще всего на 1,5 мкм, по крайней мере, в одном направлении.
11. Тело, полученное спеканием, по п.5, отличающееся тем, что оно имеет микроструктуру, включающую гомогенные области, богатые NbOx, и гомогенные области, богатые MgO, которые простираются чаще всего на 1,5 мкм, по крайней мере, в одном направлении.
12. Тело, полученное спеканием, по одному из пп.6-8, отличающееся тем, что оно имеет микроструктуру, включающую гомогенные области, богатые NbOx, и гомогенные области, богатые MgO, которые простираются чаще всего на 1,5 мкм, по крайней мере, в одном направлении.
13. Тело, полученное спеканием, по одному из пп.1-3, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
14. Тело, полученное спеканием, по п.4, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
15. Тело, полученное спеканием, по п.5, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
16. Тело, полученное спеканием, по одному из пп.6-8, 10 или 11, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
17. Тело, полученное спеканием, по п.9, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
18. Тело, полученное спеканием, по п.12, имеющее форму спеченной пластины для анодов электролитических конденсаторов с твердым электролитом.
19. Использование спеченного тела по одному из пп.1-18 в качестве компонента химической аппаратуры.
20. Использование спеченного тела по одному из пп.1-18 в качестве материала для устройств, применяемых для механической и термической обработки предшественников конденсатора при производстве электролитических конденсаторов с твердым электролитом с анодом из недоокиси ниобия.
21. Использование спеченного тела по одному из пп.1-18 в качестве материала для инертной аппаратуры, применяемой для приготовления порошка недоокиси ниобия при производстве конденсаторов.
RU2004129683/03A 2003-10-14 2004-10-14 Тело, полученное спеканием, и его применение RU2378226C2 (ru)

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DE10347702.0 2003-10-14
DE10347702A DE10347702B4 (de) 2003-10-14 2003-10-14 Sinterkörper auf Basis Niobsuboxid

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RU2004129683A true RU2004129683A (ru) 2006-03-27
RU2378226C2 RU2378226C2 (ru) 2010-01-10

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US (2) US7419926B2 (ru)
EP (1) EP1524252B2 (ru)
JP (1) JP4723224B2 (ru)
KR (2) KR101146365B1 (ru)
CN (1) CN100404463C (ru)
AU (1) AU2004220706B2 (ru)
BR (1) BRPI0406065B1 (ru)
DE (2) DE10347702B4 (ru)
IL (1) IL164514A (ru)
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RU (1) RU2378226C2 (ru)
SV (1) SV2004001904A (ru)
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GB0517952D0 (en) * 2005-09-02 2005-10-12 Avx Ltd Method of forming anode bodies for solid state capacitors
GB0622463D0 (en) * 2006-11-10 2006-12-20 Avx Ltd Powder modification in the manufacture of solid state capacitor anodes
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