RU2009139089A - Износостойкое твердое покрытие для заготовки и способ его получения - Google Patents

Износостойкое твердое покрытие для заготовки и способ его получения Download PDF

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RU2009139089A
RU2009139089A RU2009139089/02A RU2009139089A RU2009139089A RU 2009139089 A RU2009139089 A RU 2009139089A RU 2009139089/02 A RU2009139089/02 A RU 2009139089/02A RU 2009139089 A RU2009139089 A RU 2009139089A RU 2009139089 A RU2009139089 A RU 2009139089A
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workpiece according
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coating
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Маркус ЛЕХТХАЛЕР (AT)
Маркус ЛЕХТХАЛЕР
Андреас РАЙТЕР (AT)
Андреас РАЙТЕР
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Эрликон Трейдинг Аг, Трюббах (Ch)
Эрликон Трейдинг Аг, Трюббах
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Abstract

1. Заготовка, имеющая поверхность, по меньшей мере части которой покрыты износостойким, многослойным твердым покрытием, нанесенным способом PVD, при этом твердое покрытие включает по меньшей мере первый несущий слой и второй нанокристаллический слой; первый слой расположен между заготовкой и вторым слоем, при этом первый слой включает покрывающий материал, имеющий следующий состав: ! (TiaAl1-а)N1-x-yCxOy, ! где 0,4<а<0,6, а 0≤х и y<0,3, ! или ! (AlbCr1-b)N1-x-yCxOy, ! где 0,5<b<0,7, а 0≤х и y<0,3; ! второй слой включает покрывающий материал, имеющий следующий состав: ! (Al1-c-d-eCrcSidMe)N1-x-yCxOy ! где М означает по меньшей мере один элемент переходных металлов групп 4, 5, 6 периодической системы, за исключением хрома, а ! 0,2<с≤0,35, 0<d≤0,20, 0<e≤0,04. ! 2. Заготовка по п.1, первый слой которой включает покрывающий материал, имеющий следующий состав: ! (TiaAl1-а)N1-x-yCxOy, ! где 0,4<а<0,6, а 0≤х и y<0,3, ! или ! (AlbCr1-b)N1-x-yCxOy, ! где 0,5<b<0,7, а 0≤х и y<0,3; ! второй слой включает покрывающий материал, имеющий следующий состав: ! (Al1-c-d-eCrcSidM'e')N1-x-yCxOy, ! где М' означает W, Mo, Ta или Cb(Nb), и ! 0,2<с≤0,35, 0,06≤d'≤0,15, 0<e≤0,04. ! 3. Заготовка по п.1, первый слой которой включает две различные кристаллические фазы. ! 4. Заготовка по п.2, первый слой которой включает две различные кристаллические фазы. ! 5. Заготовка по п.3 или 4, в которой различные кристаллические фазы представляют собой кубическую гранецентрированную (fcc) фазу и гексагональную плотноупакованную (hcp) фазу. ! 6. Заготовка по п.5, в которой XRD сигнал hcp фазы становится более наклонным под воздействием термической обработки или высоких рабочих температур. ! 7. Заготовка по п.5, в которой hcp фаза обогащена Al. ! 8. Заготовка по п.5, в которой процентная доля hcp фазы после осаждения со

Claims (24)

1. Заготовка, имеющая поверхность, по меньшей мере части которой покрыты износостойким, многослойным твердым покрытием, нанесенным способом PVD, при этом твердое покрытие включает по меньшей мере первый несущий слой и второй нанокристаллический слой; первый слой расположен между заготовкой и вторым слоем, при этом первый слой включает покрывающий материал, имеющий следующий состав:
(TiaAl1-а)N1-x-yCxOy,
где 0,4<а<0,6, а 0≤х и y<0,3,
или
(AlbCr1-b)N1-x-yCxOy,
где 0,5<b<0,7, а 0≤х и y<0,3;
второй слой включает покрывающий материал, имеющий следующий состав:
(Al1-c-d-eCrcSidMe)N1-x-yCxOy
где М означает по меньшей мере один элемент переходных металлов групп 4, 5, 6 периодической системы, за исключением хрома, а
0,2<с≤0,35, 0<d≤0,20, 0<e≤0,04.
2. Заготовка по п.1, первый слой которой включает покрывающий материал, имеющий следующий состав:
(TiaAl1-а)N1-x-yCxOy,
где 0,4<а<0,6, а 0≤х и y<0,3,
или
(AlbCr1-b)N1-x-yCxOy,
где 0,5<b<0,7, а 0≤х и y<0,3;
второй слой включает покрывающий материал, имеющий следующий состав:
(Al1-c-d-eCrcSidM'e')N1-x-yCxOy,
где М' означает W, Mo, Ta или Cb(Nb), и
0,2<с≤0,35, 0,06≤d'≤0,15, 0<e≤0,04.
3. Заготовка по п.1, первый слой которой включает две различные кристаллические фазы.
4. Заготовка по п.2, первый слой которой включает две различные кристаллические фазы.
5. Заготовка по п.3 или 4, в которой различные кристаллические фазы представляют собой кубическую гранецентрированную (fcc) фазу и гексагональную плотноупакованную (hcp) фазу.
6. Заготовка по п.5, в которой XRD сигнал hcp фазы становится более наклонным под воздействием термической обработки или высоких рабочих температур.
7. Заготовка по п.5, в которой hcp фаза обогащена Al.
8. Заготовка по п.5, в которой процентная доля hcp фазы после осаждения составляет от 5 до 40 об.%.
9. Заготовка по любому из пп.1-4, в которой отношение QAl/Cr=(1-c-d-e)/c, находится в рамках следующего диапазона: 1,7<QAl/Cr≤2,4.
10. Заготовка по любому из пп.1-4, в которой толщина покрытия D находится в рамках следующего диапазона: 1 мкм ≤D≤10 мкм, предпочтительно, 2 мкм ≤D≤6 мкм.
11. Заготовка по любому из пп.1-4, в которой толщина D1 первого несущего слоя меньше толщины D2 второго покрытия.
12. Заготовка по любому из пп.1-4, в которой толщина HV1 первого несущего слоя меньше толщины HV2 второго покрытия.
13. Заготовка по любому из пп.1-4, в которой второй слой демонстрирует нанокристаллическую структуру роста в поперечном сечении РЭМ.
14. Заготовка по любому из пп.1-4, в которой первый слой демонстрирует столбчатую структуру роста в поперечном сечении РЭМ.
15. Заготовка по любому из пп.1-4, в которой коэффициент текстуры QI=I(200)/I(111) второго нанокристаллического слоя находится в диапазоне, составляющем 0,7≤QI≤2.
16. Заготовка по любому из пп.1-4, в которой первый слой включает полислой из чередующихся слоев (TiaAl1-а)N1-x-yCxOy и (Al1-c-d-eCrcSidMe)N1-x-yCxOy или чередующихся слоев (AlbCr1-b)N1-x-yCxOy и (Al1-c-d-eCrcSidMe)N1-x-yCxOy.
17. Заготовка по любому из пп.1-4, корпус которой изготовлен из быстрорежущей стали, цементированного карбида, кубического нитрида бора, металлокерамики или керамического материала.
18. Заготовка по любому из пп.1-4, в которой заготовка представляет собой режущий инструмент, в частности, концевую фрезу, сверло, режущую вставную пластинку или зуборезный инструмент.
19. Способ PVD для получения заготовки по любому из пп.1-18, включающий стадию нагревания заготовки до температуры выше 550°С, в частности до температуры, составляющей около 600°С, и поддержание данной температуры во время процесса осаждения.
20. Способ PVD по п.19, включающий стадию приложения к первой подложке напряжения U1 во время осаждения первого покрытия и приложения ко второй подложке более высокого напряжения U2 во время осаждения второго покрытия.
21. Способ PVD по п.20, в котором 0 В≤U1≤-100 В, -80 В≤U2≤-200 В, а │U2-U1│≥20.
22. Способ резания для обработки твердого материала, в частности материала, имеющего твердость по Роквеллу, составляющую 50 HRC и выше, используя режущий инструмент по п.18.
23. Способ резания по п.22, в котором твердый материал представляет собой закаленную сталь.
24. Способ получения обработанной заготовки из твердого материала, включающий использование способа резания по любому из пп.22 или 23.
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