SE0001646L - Topp-kontakt vcsel med övervakning - Google Patents

Topp-kontakt vcsel med övervakning

Info

Publication number
SE0001646L
SE0001646L SE0001646A SE0001646A SE0001646L SE 0001646 L SE0001646 L SE 0001646L SE 0001646 A SE0001646 A SE 0001646A SE 0001646 A SE0001646 A SE 0001646A SE 0001646 L SE0001646 L SE 0001646L
Authority
SE
Sweden
Prior art keywords
vcsel
monitoring
parasitic capacitance
monitor chip
results
Prior art date
Application number
SE0001646A
Other languages
English (en)
Other versions
SE0001646D0 (sv
Inventor
Mikael Wickstroem
Jan Joensson
Vilhelm Oskarsson
Original Assignee
Mitel Semiconductor Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9910202A external-priority patent/GB2349740A/en
Application filed by Mitel Semiconductor Ab filed Critical Mitel Semiconductor Ab
Publication of SE0001646D0 publication Critical patent/SE0001646D0/sv
Publication of SE0001646L publication Critical patent/SE0001646L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L27/15—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
SE0001646A 1999-05-05 2000-05-04 Topp-kontakt vcsel med övervakning SE0001646L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9910202A GB2349740A (en) 1999-05-05 1999-05-05 Vertical cavity surface emitting laser with monitoring diode
US09/506,895 US6368890B1 (en) 1999-05-05 2000-02-18 Top contact VCSEL with monitor

Publications (2)

Publication Number Publication Date
SE0001646D0 SE0001646D0 (sv) 2000-05-04
SE0001646L true SE0001646L (sv) 2000-11-06

Family

ID=26315500

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0001646A SE0001646L (sv) 1999-05-05 2000-05-04 Topp-kontakt vcsel med övervakning

Country Status (7)

Country Link
US (2) US6368890B1 (sv)
JP (1) JP2000340877A (sv)
CA (1) CA2307779A1 (sv)
DE (1) DE10021564A1 (sv)
FR (1) FR2793960A1 (sv)
GB (1) GB2351180A (sv)
SE (1) SE0001646L (sv)

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JP2005252032A (ja) * 2004-03-04 2005-09-15 Furukawa Electric Co Ltd:The 面発光レーザ素子およびそれを用いたレーザモジュール
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US20070047609A1 (en) * 2005-08-30 2007-03-01 Francis Daniel A Wafer testing of edge emitting lasers
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JP2007123738A (ja) * 2005-10-31 2007-05-17 Sony Corp 光送信モジュール、光送受信モジュール及び光通信装置
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US7253386B2 (en) * 2005-12-12 2007-08-07 Xerox Corporation Method and apparatus for monitoring and controlling laser intensity in a ROS scanning system
TW200832851A (en) * 2007-01-29 2008-08-01 Truelight Corp Package structure for horizontal cavity surface-emitting laser diode with light monitoring function
FR2915029A1 (fr) 2007-04-13 2008-10-17 Commissariat Energie Atomique Dispositif optoelectronique compact incluant au moins un laser emettant par la surface
US8767784B2 (en) 2011-02-21 2014-07-01 Tyco Electronics Corporation Driver for supplying modulated current to a laser
US8401045B2 (en) 2011-05-27 2013-03-19 Fujitsu Limited Regulating a vertical-cavity surface-emitting laser (VCSEL)-based optical communication link
JP5946611B2 (ja) 2011-07-15 2016-07-06 株式会社エンプラス 光レセプタクルおよびこれを備えた光モジュール
JP6134934B2 (ja) 2011-12-02 2017-05-31 株式会社エンプラス 光レセプタクルおよびこれを備えた光モジュール
JP6011958B2 (ja) * 2012-03-28 2016-10-25 株式会社エンプラス 光レセプタクルおよびこれを備えた光モジュール
DE102013201931B4 (de) * 2013-02-06 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserbauelement und Verfahren zu seiner Herstellung
JP6205194B2 (ja) 2013-07-08 2017-09-27 株式会社エンプラス 光レセプタクルおよび光モジュール
JP6289830B2 (ja) 2013-07-23 2018-03-07 株式会社エンプラス 光レセプタクルおよび光モジュール
US9559493B2 (en) 2015-06-09 2017-01-31 Sae Magnetics (H.K.) Ltd. Power monitoring device and transmitter having same
US9547142B1 (en) 2015-09-16 2017-01-17 Sae Magnetics (H.K.) Ltd. Optical transmitter module
EP3718183B1 (en) 2017-11-29 2023-02-15 Vixar, Inc. Power monitoring approach for vcsels and vcsel arrays
CN111868487B (zh) 2018-03-20 2024-08-30 维克萨股份有限公司 对眼睛安全的光学模块
TWI675522B (zh) * 2019-01-15 2019-10-21 晶智達光電股份有限公司 發光元件
US11988894B2 (en) 2021-02-26 2024-05-21 Stmicroelectronics (Research & Development) Limited Lens displacement detection circuit for an optical device
DE102022114856A1 (de) 2022-06-13 2023-12-14 Trumpf Photonic Components Gmbh VCSEL zum Emittieren von Laserlicht

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Also Published As

Publication number Publication date
FR2793960A1 (fr) 2000-11-24
CA2307779A1 (en) 2000-11-05
DE10021564A1 (de) 2000-11-09
SE0001646D0 (sv) 2000-05-04
US6678292B2 (en) 2004-01-13
GB0010361D0 (en) 2000-06-14
US20020110171A1 (en) 2002-08-15
US6368890B1 (en) 2002-04-09
GB2351180A (en) 2000-12-20
JP2000340877A (ja) 2000-12-08

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Legal Events

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