SE0100748L - Elektrokemisk anordning - Google Patents
Elektrokemisk anordningInfo
- Publication number
- SE0100748L SE0100748L SE0100748A SE0100748A SE0100748L SE 0100748 L SE0100748 L SE 0100748L SE 0100748 A SE0100748 A SE 0100748A SE 0100748 A SE0100748 A SE 0100748A SE 0100748 L SE0100748 L SE 0100748L
- Authority
- SE
- Sweden
- Prior art keywords
- gate electrode
- active element
- source
- contact
- transistor device
- Prior art date
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
- C09K9/02—Organic tenebrescent materials
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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- H01L29/772—
-
- H01L51/05—
-
- H01L51/0575—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
- G02F2001/1635—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor the pixel comprises active switching elements, e.g. TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
- G02F2202/022—Materials and properties organic material polymeric
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
- H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Nanotechnology (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Electroluminescent Light Sources (AREA)
- Semiconductor Memories (AREA)
Priority Applications (19)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0100748A SE520339C2 (sv) | 2001-03-07 | 2001-03-07 | Elektrokemisk transistoranordning och dess tillverkningsförfarande |
| PCT/SE2002/000406 WO2002071505A1 (en) | 2001-03-07 | 2002-03-07 | Electrochemical device |
| CNB028060520A CN100352077C (zh) | 2001-03-07 | 2002-03-07 | 电化学器件 |
| CNB028061276A CN1224862C (zh) | 2001-03-07 | 2002-03-07 | 电化学像素器件 |
| PCT/SE2002/000404 WO2002071139A1 (en) | 2001-03-07 | 2002-03-07 | Electrochemical pixel device |
| JP2002570320A JP5043283B2 (ja) | 2001-03-07 | 2002-03-07 | 電気化学装置 |
| AT02704001T ATE393411T1 (de) | 2001-03-07 | 2002-03-07 | Elektrochemische pixel-einrichtung |
| US10/091,397 US6642069B2 (en) | 2001-03-07 | 2002-03-07 | Electrochemical pixel device |
| EP02703016A EP1374321A1 (en) | 2001-03-07 | 2002-03-07 | Electrochemical device |
| US10/091,419 US6806511B2 (en) | 2001-03-07 | 2002-03-07 | Electrochemical device |
| JP2002569996A JP4256163B2 (ja) | 2001-03-07 | 2002-03-07 | 電気化学ピクセル装置 |
| EP02704001A EP1373976B1 (en) | 2001-03-07 | 2002-03-07 | Electrochemical pixel device |
| DE60226221T DE60226221T2 (de) | 2001-03-07 | 2002-03-07 | Elektrochemische pixel-einrichtung |
| US10/819,306 US7012306B2 (en) | 2001-03-07 | 2004-04-07 | Electrochemical device |
| US11/327,438 US7582895B2 (en) | 2001-03-07 | 2006-01-09 | Electrochemical device including a channel of an organic material, a gate electrode, and an electrolyte therebetween |
| US11/980,633 US7679110B2 (en) | 2001-03-07 | 2007-10-31 | Electrochemical device and methods for producing the same |
| US11/980,359 US7705410B2 (en) | 2001-03-07 | 2007-10-31 | Circuitry and method |
| US12/659,194 US20100230731A1 (en) | 2001-03-07 | 2010-02-26 | Circuitry and method |
| JP2010052470A JP5268075B2 (ja) | 2001-03-07 | 2010-03-10 | 電気化学トランジスタ装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0100748A SE520339C2 (sv) | 2001-03-07 | 2001-03-07 | Elektrokemisk transistoranordning och dess tillverkningsförfarande |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE0100748D0 SE0100748D0 (sv) | 2001-03-07 |
| SE0100748L true SE0100748L (sv) | 2002-09-08 |
| SE520339C2 SE520339C2 (sv) | 2003-06-24 |
Family
ID=20283223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0100748A SE520339C2 (sv) | 2001-03-07 | 2001-03-07 | Elektrokemisk transistoranordning och dess tillverkningsförfarande |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6806511B2 (sv) |
| EP (1) | EP1374321A1 (sv) |
| JP (2) | JP5043283B2 (sv) |
| CN (1) | CN100352077C (sv) |
| SE (1) | SE520339C2 (sv) |
| WO (1) | WO2002071505A1 (sv) |
Families Citing this family (88)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10061299A1 (de) | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
| DE10061297C2 (de) | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
| DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| US7012306B2 (en) * | 2001-03-07 | 2006-03-14 | Acreo Ab | Electrochemical device |
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| DE10151036A1 (de) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
| DE10160732A1 (de) | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
| DE10212640B4 (de) | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
| ATE355566T1 (de) | 2002-08-23 | 2006-03-15 | Polyic Gmbh & Co Kg | Organisches bauelement zum überspannungsschutz und dazugehörige schaltung |
| DE10253154A1 (de) | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
| US7442954B2 (en) | 2002-11-19 | 2008-10-28 | Polyic Gmbh & Co. Kg | Organic electronic component comprising a patterned, semi-conducting functional layer and a method for producing said component |
| DE10300521A1 (de) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistiver Speicher |
| DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
| US7179534B2 (en) * | 2003-01-31 | 2007-02-20 | Princeton University | Conductive-polymer electronic switch |
| DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
| US7163734B2 (en) * | 2003-08-26 | 2007-01-16 | Eastman Kodak Company | Patterning of electrically conductive layers by ink printing methods |
| DE10340644B4 (de) | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
| US20050129977A1 (en) * | 2003-12-12 | 2005-06-16 | General Electric Company | Method and apparatus for forming patterned coated films |
| US7358113B2 (en) * | 2004-01-28 | 2008-04-15 | Zettacore, Inc. | Processing systems and methods for molecular memory |
| US7695756B2 (en) * | 2004-04-29 | 2010-04-13 | Zettacore, Inc. | Systems, tools and methods for production of molecular memory |
| US6972427B2 (en) * | 2004-04-29 | 2005-12-06 | Infineon Technologies Ag | Switching device for reconfigurable interconnect and method for making the same |
| JP4461173B2 (ja) * | 2004-04-29 | 2010-05-12 | ゼッタコア,インコーポレーテッド. | 分子メモリとそのプロセスシステムおよびプロセス方法 |
| DE102004024271A1 (de) * | 2004-05-15 | 2005-12-01 | H.C. Starck Gmbh | Verbindungen enthaltend 3,4-Methylendioxythiophen-Einheiten |
| US7626179B2 (en) | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
| US7791290B2 (en) | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
| US7586097B2 (en) | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
| JP4858804B2 (ja) * | 2004-08-31 | 2012-01-18 | 国立大学法人大阪大学 | 薄層化学トランジスター及びその製造方法 |
| EP1648040B1 (en) * | 2004-08-31 | 2016-06-01 | Osaka University | Thin-layer chemical transistors and their manufacture |
| DE102005009820A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
| US7642546B2 (en) * | 2005-12-01 | 2010-01-05 | Zettacore, Inc. | Molecular memory devices including solid-state dielectric layers and related methods |
| US7579609B2 (en) | 2005-12-14 | 2009-08-25 | Virgin Islands Microsystems, Inc. | Coupling light of light emitting resonator to waveguide |
| US7443358B2 (en) | 2006-02-28 | 2008-10-28 | Virgin Island Microsystems, Inc. | Integrated filter in antenna-based detector |
| US7646991B2 (en) | 2006-04-26 | 2010-01-12 | Virgin Island Microsystems, Inc. | Selectable frequency EMR emitter |
| US7876793B2 (en) | 2006-04-26 | 2011-01-25 | Virgin Islands Microsystems, Inc. | Micro free electron laser (FEL) |
| EP2016591A1 (en) * | 2006-04-28 | 2009-01-21 | Agfa-Gevaert | Conventionally printable non-volatile passive memory element and method of making thereof. |
| US7710040B2 (en) | 2006-05-05 | 2010-05-04 | Virgin Islands Microsystems, Inc. | Single layer construction for ultra small devices |
| US7732786B2 (en) | 2006-05-05 | 2010-06-08 | Virgin Islands Microsystems, Inc. | Coupling energy in a plasmon wave to an electron beam |
| US7723698B2 (en) | 2006-05-05 | 2010-05-25 | Virgin Islands Microsystems, Inc. | Top metal layer shield for ultra-small resonant structures |
| US7728397B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Coupled nano-resonating energy emitting structures |
| US8188431B2 (en) | 2006-05-05 | 2012-05-29 | Jonathan Gorrell | Integration of vacuum microelectronic device with integrated circuit |
| US7746532B2 (en) | 2006-05-05 | 2010-06-29 | Virgin Island Microsystems, Inc. | Electro-optical switching system and method |
| US7728702B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Shielding of integrated circuit package with high-permeability magnetic material |
| US7741934B2 (en) | 2006-05-05 | 2010-06-22 | Virgin Islands Microsystems, Inc. | Coupling a signal through a window |
| US7986113B2 (en) | 2006-05-05 | 2011-07-26 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
| US7656094B2 (en) * | 2006-05-05 | 2010-02-02 | Virgin Islands Microsystems, Inc. | Electron accelerator for ultra-small resonant structures |
| US7718977B2 (en) | 2006-05-05 | 2010-05-18 | Virgin Island Microsystems, Inc. | Stray charged particle removal device |
| US7679067B2 (en) | 2006-05-26 | 2010-03-16 | Virgin Island Microsystems, Inc. | Receiver array using shared electron beam |
| US7655934B2 (en) | 2006-06-28 | 2010-02-02 | Virgin Island Microsystems, Inc. | Data on light bulb |
| GB2449926A (en) | 2007-06-08 | 2008-12-10 | Seiko Epson Corp | Method for manufacturing an electrolyte pattern |
| GB2449927A (en) * | 2007-06-08 | 2008-12-10 | Seiko Epson Corp | Electrolyte gated TFT |
| GB2449928A (en) * | 2007-06-08 | 2008-12-10 | Seiko Epson Corp | Electrochemical thin-film transistor |
| US7990336B2 (en) | 2007-06-19 | 2011-08-02 | Virgin Islands Microsystems, Inc. | Microwave coupled excitation of solid state resonant arrays |
| JP5602626B2 (ja) | 2007-06-29 | 2014-10-08 | アーティフィシャル マッスル,インク. | 感覚性フィードバック用途のための電気活性ポリマートランスデューサー |
| TWI392087B (zh) * | 2007-07-26 | 2013-04-01 | Ind Tech Res Inst | 固態電解質記憶元件及其製造方法 |
| US7791053B2 (en) * | 2007-10-10 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Depressed anode with plasmon-enabled devices such as ultra-small resonant structures |
| US7724499B2 (en) * | 2007-11-13 | 2010-05-25 | Industrial Technology Research Institute | Electrolyte transistor |
| PT103999B (pt) | 2008-03-20 | 2012-11-16 | Univ Nova De Lisboa | Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem |
| PT103998B (pt) * | 2008-03-20 | 2011-03-10 | Univ Nova De Lisboa | Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico |
| EP2120107A1 (en) | 2008-05-05 | 2009-11-18 | Acreo AB | Device for integrating and indicating a parameter over time |
| EP2143768A1 (en) | 2008-07-11 | 2010-01-13 | Acreo AB | Waterbased casting or printing composition |
| US7948151B1 (en) | 2009-04-09 | 2011-05-24 | The United States Of America As Represented By The Secretary Of The Navy | Electroactive polymer-based artificial neuromuscular unit |
| EP2239793A1 (de) | 2009-04-11 | 2010-10-13 | Bayer MaterialScience AG | Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung |
| US8067875B1 (en) | 2009-04-13 | 2011-11-29 | The United States Of America As Represented By The Secretary Of The Navy | Networked structure of electroactive polymer-based artificial neuromuscular units |
| DE102010026098A1 (de) * | 2010-07-05 | 2012-01-05 | Forschungszentrum Jülich GmbH | Ionisch gesteuertes Dreitorbauelement |
| EP2606530B1 (en) | 2010-08-20 | 2017-04-26 | Rhodia Operations | Polymer compositions, polymer films, polymer gels, polymer foams, and electronic devices containing such films, gels, and foams |
| US9709867B2 (en) | 2010-10-05 | 2017-07-18 | Rise Acreo Ab | Display device |
| TWI542269B (zh) | 2011-03-01 | 2016-07-11 | 拜耳材料科學股份有限公司 | 用於生產可變形聚合物裝置和薄膜的自動化生產方法 |
| KR20140019801A (ko) | 2011-03-22 | 2014-02-17 | 바이엘 인텔렉쳐 프로퍼티 게엠베하 | 전기활성 중합체 작동기 렌티큘라 시스템 |
| JP6035458B2 (ja) | 2011-04-05 | 2016-12-07 | リンテック株式会社 | 電極上での自己整列電解質に基づく電気化学デバイスの製造方法 |
| KR20140026455A (ko) * | 2011-04-07 | 2014-03-05 | 바이엘 인텔렉쳐 프로퍼티 게엠베하 | 전도성 중합체 퓨즈 |
| WO2013007362A1 (en) * | 2011-07-08 | 2013-01-17 | Heraeus Precious Metals Gmbh & Co. Kg | Process for the production of a layered body and layered bodies obtainable therefrom |
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| US9484601B2 (en) * | 2013-07-30 | 2016-11-01 | Elwha Llc | Load-managed electrochemical energy generation system |
| US9893369B2 (en) | 2013-07-30 | 2018-02-13 | Elwha Llc | Managed access electrochemical energy generation system |
| US9343783B2 (en) | 2013-07-30 | 2016-05-17 | Elwha Llc | Electrochemical energy generation system having individually controllable cells |
| EP3038177B1 (en) * | 2014-12-22 | 2019-12-18 | Nokia Technologies Oy | Modular electronics apparatuses and methods |
| US10497866B1 (en) * | 2018-06-19 | 2019-12-03 | National Technology & Engineering Solutions Of Sandia, Llc | Ionic floating-gate memory device |
| CN109638166A (zh) * | 2018-12-19 | 2019-04-16 | 福州大学 | 一种全固态有机电化学光晶体管及其制备方法 |
| CN111063260B (zh) * | 2019-12-27 | 2021-12-24 | 武汉天马微电子有限公司 | 一种显示装置及其弯折方法 |
| CN115963666B (zh) * | 2021-10-12 | 2025-12-19 | 南京林业大学 | 一种用于电致变色器件的高稳定性型水凝胶电解质 |
| CN114583050B (zh) * | 2022-02-18 | 2023-07-25 | 电子科技大学 | 一种可拉伸有机电化学晶体管及其制备方法 |
| CN116794141A (zh) * | 2022-03-17 | 2023-09-22 | 武汉纺织大学 | 积累工作模式的有机电化学晶体管及复合半导体材料 |
| CN115942756B (zh) * | 2022-11-23 | 2026-04-24 | 武汉纺织大学 | 垂直型纤维基有机电化学晶体管及其制备方法 |
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| US4936956A (en) * | 1984-11-23 | 1990-06-26 | Massachusetts Institute Of Technology | Microelectrochemical devices based on inorganic redox active material and method for sensing |
| DE3721793A1 (de) * | 1986-07-01 | 1988-04-07 | Mitsubishi Electric Corp | Elektrisches element mit verwendung von oxidations-reduktions-substanzen |
| JPH01202866A (ja) * | 1988-02-09 | 1989-08-15 | Seiko Epson Corp | 分子素子 |
| DE69018348T2 (de) * | 1989-07-25 | 1995-08-03 | Matsushita Electric Ind Co Ltd | Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren. |
| JP3169617B2 (ja) * | 1989-12-27 | 2001-05-28 | 日本石油化学株式会社 | 電気伝導度制御方法 |
| EP0440957B1 (de) * | 1990-02-08 | 1996-03-27 | Bayer Ag | Neue Polythiophen-Dispersionen, ihre Herstellung und ihre Verwendung |
| FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| JPH0575127A (ja) * | 1991-09-17 | 1993-03-26 | Canon Inc | 薄膜半導体装置 |
| SE517720C2 (sv) | 1996-08-08 | 2002-07-09 | Olle Inganaes | Elektrokemiska komponenter baserade på polymerer |
| EP0968537B1 (en) | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
| US6207034B1 (en) * | 1997-12-05 | 2001-03-27 | Massachusetts Institute Of Technology | Method of manufacture of polymer transistors with controllable gap |
| US6506438B2 (en) * | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US6444400B1 (en) * | 1999-08-23 | 2002-09-03 | Agfa-Gevaert | Method of making an electroconductive pattern on a support |
-
2001
- 2001-03-07 SE SE0100748A patent/SE520339C2/sv not_active IP Right Cessation
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2002
- 2002-03-07 US US10/091,419 patent/US6806511B2/en not_active Expired - Fee Related
- 2002-03-07 CN CNB028060520A patent/CN100352077C/zh not_active Expired - Fee Related
- 2002-03-07 EP EP02703016A patent/EP1374321A1/en not_active Withdrawn
- 2002-03-07 JP JP2002570320A patent/JP5043283B2/ja not_active Expired - Fee Related
- 2002-03-07 WO PCT/SE2002/000406 patent/WO2002071505A1/en not_active Ceased
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|---|---|
| EP1374321A1 (en) | 2004-01-02 |
| WO2002071505A8 (en) | 2004-06-03 |
| SE0100748D0 (sv) | 2001-03-07 |
| US20020158295A1 (en) | 2002-10-31 |
| WO2002071505A1 (en) | 2002-09-12 |
| CN1494743A (zh) | 2004-05-05 |
| JP5268075B2 (ja) | 2013-08-21 |
| US6806511B2 (en) | 2004-10-19 |
| JP5043283B2 (ja) | 2012-10-10 |
| CN100352077C (zh) | 2007-11-28 |
| SE520339C2 (sv) | 2003-06-24 |
| JP2010177678A (ja) | 2010-08-12 |
| JP2004529491A (ja) | 2004-09-24 |
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