SE0100748L - Elektrokemisk anordning - Google Patents

Elektrokemisk anordning

Info

Publication number
SE0100748L
SE0100748L SE0100748A SE0100748A SE0100748L SE 0100748 L SE0100748 L SE 0100748L SE 0100748 A SE0100748 A SE 0100748A SE 0100748 A SE0100748 A SE 0100748A SE 0100748 L SE0100748 L SE 0100748L
Authority
SE
Sweden
Prior art keywords
gate electrode
active element
source
contact
transistor device
Prior art date
Application number
SE0100748A
Other languages
English (en)
Other versions
SE0100748D0 (sv
SE520339C2 (sv
Inventor
Maarten Armgarth
Miaoxiang Chen
David Andreas Nilsson
Rolf Magnus Berggren
Thomas Kugler
Tommi Mattias Remonen
Original Assignee
Acreo Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acreo Ab filed Critical Acreo Ab
Priority to SE0100748A priority Critical patent/SE520339C2/sv
Publication of SE0100748D0 publication Critical patent/SE0100748D0/sv
Priority to US10/091,419 priority patent/US6806511B2/en
Priority to EP02704001A priority patent/EP1373976B1/en
Priority to PCT/SE2002/000404 priority patent/WO2002071139A1/en
Priority to JP2002570320A priority patent/JP5043283B2/ja
Priority to AT02704001T priority patent/ATE393411T1/de
Priority to US10/091,397 priority patent/US6642069B2/en
Priority to EP02703016A priority patent/EP1374321A1/en
Priority to CNB028060520A priority patent/CN100352077C/zh
Priority to JP2002569996A priority patent/JP4256163B2/ja
Priority to CNB028061276A priority patent/CN1224862C/zh
Priority to DE60226221T priority patent/DE60226221T2/de
Priority to PCT/SE2002/000406 priority patent/WO2002071505A1/en
Publication of SE0100748L publication Critical patent/SE0100748L/sv
Publication of SE520339C2 publication Critical patent/SE520339C2/sv
Priority to US10/819,306 priority patent/US7012306B2/en
Priority to US11/327,438 priority patent/US7582895B2/en
Priority to US11/980,633 priority patent/US7679110B2/en
Priority to US11/980,359 priority patent/US7705410B2/en
Priority to US12/659,194 priority patent/US20100230731A1/en
Priority to JP2010052470A priority patent/JP5268075B2/ja

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/163Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K9/00Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
    • C09K9/02Organic tenebrescent materials
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H01L29/772
    • H01L51/05
    • H01L51/0575
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00Primary cells; Manufacture thereof
    • H01M6/40Printed batteries, e.g. thin film batteries
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20Organic diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/163Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
    • G02F2001/1635Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor the pixel comprises active switching elements, e.g. TFT
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/02Materials and properties organic material
    • G02F2202/022Materials and properties organic material polymeric
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10Resistive cells; Technology aspects
    • G11C2213/15Current-voltage curve
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/682Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
SE0100748A 2001-03-07 2001-03-07 Elektrokemisk transistoranordning och dess tillverkningsförfarande SE520339C2 (sv)

Priority Applications (19)

Application Number Priority Date Filing Date Title
SE0100748A SE520339C2 (sv) 2001-03-07 2001-03-07 Elektrokemisk transistoranordning och dess tillverkningsförfarande
PCT/SE2002/000406 WO2002071505A1 (en) 2001-03-07 2002-03-07 Electrochemical device
CNB028060520A CN100352077C (zh) 2001-03-07 2002-03-07 电化学器件
CNB028061276A CN1224862C (zh) 2001-03-07 2002-03-07 电化学像素器件
PCT/SE2002/000404 WO2002071139A1 (en) 2001-03-07 2002-03-07 Electrochemical pixel device
JP2002570320A JP5043283B2 (ja) 2001-03-07 2002-03-07 電気化学装置
AT02704001T ATE393411T1 (de) 2001-03-07 2002-03-07 Elektrochemische pixel-einrichtung
US10/091,397 US6642069B2 (en) 2001-03-07 2002-03-07 Electrochemical pixel device
EP02703016A EP1374321A1 (en) 2001-03-07 2002-03-07 Electrochemical device
US10/091,419 US6806511B2 (en) 2001-03-07 2002-03-07 Electrochemical device
JP2002569996A JP4256163B2 (ja) 2001-03-07 2002-03-07 電気化学ピクセル装置
EP02704001A EP1373976B1 (en) 2001-03-07 2002-03-07 Electrochemical pixel device
DE60226221T DE60226221T2 (de) 2001-03-07 2002-03-07 Elektrochemische pixel-einrichtung
US10/819,306 US7012306B2 (en) 2001-03-07 2004-04-07 Electrochemical device
US11/327,438 US7582895B2 (en) 2001-03-07 2006-01-09 Electrochemical device including a channel of an organic material, a gate electrode, and an electrolyte therebetween
US11/980,633 US7679110B2 (en) 2001-03-07 2007-10-31 Electrochemical device and methods for producing the same
US11/980,359 US7705410B2 (en) 2001-03-07 2007-10-31 Circuitry and method
US12/659,194 US20100230731A1 (en) 2001-03-07 2010-02-26 Circuitry and method
JP2010052470A JP5268075B2 (ja) 2001-03-07 2010-03-10 電気化学トランジスタ装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0100748A SE520339C2 (sv) 2001-03-07 2001-03-07 Elektrokemisk transistoranordning och dess tillverkningsförfarande

Publications (3)

Publication Number Publication Date
SE0100748D0 SE0100748D0 (sv) 2001-03-07
SE0100748L true SE0100748L (sv) 2002-09-08
SE520339C2 SE520339C2 (sv) 2003-06-24

Family

ID=20283223

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0100748A SE520339C2 (sv) 2001-03-07 2001-03-07 Elektrokemisk transistoranordning och dess tillverkningsförfarande

Country Status (6)

Country Link
US (1) US6806511B2 (sv)
EP (1) EP1374321A1 (sv)
JP (2) JP5043283B2 (sv)
CN (1) CN100352077C (sv)
SE (1) SE520339C2 (sv)
WO (1) WO2002071505A1 (sv)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
US7012306B2 (en) * 2001-03-07 2006-03-14 Acreo Ab Electrochemical device
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
DE10212640B4 (de) 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
ATE355566T1 (de) 2002-08-23 2006-03-15 Polyic Gmbh & Co Kg Organisches bauelement zum überspannungsschutz und dazugehörige schaltung
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
US7442954B2 (en) 2002-11-19 2008-10-28 Polyic Gmbh & Co. Kg Organic electronic component comprising a patterned, semi-conducting functional layer and a method for producing said component
DE10300521A1 (de) * 2003-01-09 2004-07-22 Siemens Ag Organoresistiver Speicher
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
US7179534B2 (en) * 2003-01-31 2007-02-20 Princeton University Conductive-polymer electronic switch
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
US7163734B2 (en) * 2003-08-26 2007-01-16 Eastman Kodak Company Patterning of electrically conductive layers by ink printing methods
DE10340644B4 (de) 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
US20050129977A1 (en) * 2003-12-12 2005-06-16 General Electric Company Method and apparatus for forming patterned coated films
US7358113B2 (en) * 2004-01-28 2008-04-15 Zettacore, Inc. Processing systems and methods for molecular memory
US7695756B2 (en) * 2004-04-29 2010-04-13 Zettacore, Inc. Systems, tools and methods for production of molecular memory
US6972427B2 (en) * 2004-04-29 2005-12-06 Infineon Technologies Ag Switching device for reconfigurable interconnect and method for making the same
JP4461173B2 (ja) * 2004-04-29 2010-05-12 ゼッタコア,インコーポレーテッド. 分子メモリとそのプロセスシステムおよびプロセス方法
DE102004024271A1 (de) * 2004-05-15 2005-12-01 H.C. Starck Gmbh Verbindungen enthaltend 3,4-Methylendioxythiophen-Einheiten
US7626179B2 (en) 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
JP4858804B2 (ja) * 2004-08-31 2012-01-18 国立大学法人大阪大学 薄層化学トランジスター及びその製造方法
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
US7642546B2 (en) * 2005-12-01 2010-01-05 Zettacore, Inc. Molecular memory devices including solid-state dielectric layers and related methods
US7579609B2 (en) 2005-12-14 2009-08-25 Virgin Islands Microsystems, Inc. Coupling light of light emitting resonator to waveguide
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US7646991B2 (en) 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US7876793B2 (en) 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
EP2016591A1 (en) * 2006-04-28 2009-01-21 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof.
US7710040B2 (en) 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7732786B2 (en) 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7746532B2 (en) 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7741934B2 (en) 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7656094B2 (en) * 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7679067B2 (en) 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
GB2449926A (en) 2007-06-08 2008-12-10 Seiko Epson Corp Method for manufacturing an electrolyte pattern
GB2449927A (en) * 2007-06-08 2008-12-10 Seiko Epson Corp Electrolyte gated TFT
GB2449928A (en) * 2007-06-08 2008-12-10 Seiko Epson Corp Electrochemical thin-film transistor
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
JP5602626B2 (ja) 2007-06-29 2014-10-08 アーティフィシャル マッスル,インク. 感覚性フィードバック用途のための電気活性ポリマートランスデューサー
TWI392087B (zh) * 2007-07-26 2013-04-01 Ind Tech Res Inst 固態電解質記憶元件及其製造方法
US7791053B2 (en) * 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
US7724499B2 (en) * 2007-11-13 2010-05-25 Industrial Technology Research Institute Electrolyte transistor
PT103999B (pt) 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
PT103998B (pt) * 2008-03-20 2011-03-10 Univ Nova De Lisboa Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
EP2120107A1 (en) 2008-05-05 2009-11-18 Acreo AB Device for integrating and indicating a parameter over time
EP2143768A1 (en) 2008-07-11 2010-01-13 Acreo AB Waterbased casting or printing composition
US7948151B1 (en) 2009-04-09 2011-05-24 The United States Of America As Represented By The Secretary Of The Navy Electroactive polymer-based artificial neuromuscular unit
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
US8067875B1 (en) 2009-04-13 2011-11-29 The United States Of America As Represented By The Secretary Of The Navy Networked structure of electroactive polymer-based artificial neuromuscular units
DE102010026098A1 (de) * 2010-07-05 2012-01-05 Forschungszentrum Jülich GmbH Ionisch gesteuertes Dreitorbauelement
EP2606530B1 (en) 2010-08-20 2017-04-26 Rhodia Operations Polymer compositions, polymer films, polymer gels, polymer foams, and electronic devices containing such films, gels, and foams
US9709867B2 (en) 2010-10-05 2017-07-18 Rise Acreo Ab Display device
TWI542269B (zh) 2011-03-01 2016-07-11 拜耳材料科學股份有限公司 用於生產可變形聚合物裝置和薄膜的自動化生產方法
KR20140019801A (ko) 2011-03-22 2014-02-17 바이엘 인텔렉쳐 프로퍼티 게엠베하 전기활성 중합체 작동기 렌티큘라 시스템
JP6035458B2 (ja) 2011-04-05 2016-12-07 リンテック株式会社 電極上での自己整列電解質に基づく電気化学デバイスの製造方法
KR20140026455A (ko) * 2011-04-07 2014-03-05 바이엘 인텔렉쳐 프로퍼티 게엠베하 전도성 중합체 퓨즈
WO2013007362A1 (en) * 2011-07-08 2013-01-17 Heraeus Precious Metals Gmbh & Co. Kg Process for the production of a layered body and layered bodies obtainable therefrom
US9653159B2 (en) 2012-01-18 2017-05-16 Xerox Corporation Memory device based on conductance switching in polymer/electrolyte junctions
EP2828901B1 (en) 2012-03-21 2017-01-04 Parker Hannifin Corporation Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices
WO2013192143A1 (en) 2012-06-18 2013-12-27 Bayer Intellectual Property Gmbh Stretch frame for stretching process
WO2014066576A1 (en) 2012-10-24 2014-05-01 Bayer Intellectual Property Gmbh Polymer diode
US9484601B2 (en) * 2013-07-30 2016-11-01 Elwha Llc Load-managed electrochemical energy generation system
US9893369B2 (en) 2013-07-30 2018-02-13 Elwha Llc Managed access electrochemical energy generation system
US9343783B2 (en) 2013-07-30 2016-05-17 Elwha Llc Electrochemical energy generation system having individually controllable cells
EP3038177B1 (en) * 2014-12-22 2019-12-18 Nokia Technologies Oy Modular electronics apparatuses and methods
US10497866B1 (en) * 2018-06-19 2019-12-03 National Technology & Engineering Solutions Of Sandia, Llc Ionic floating-gate memory device
CN109638166A (zh) * 2018-12-19 2019-04-16 福州大学 一种全固态有机电化学光晶体管及其制备方法
CN111063260B (zh) * 2019-12-27 2021-12-24 武汉天马微电子有限公司 一种显示装置及其弯折方法
CN115963666B (zh) * 2021-10-12 2025-12-19 南京林业大学 一种用于电致变色器件的高稳定性型水凝胶电解质
CN114583050B (zh) * 2022-02-18 2023-07-25 电子科技大学 一种可拉伸有机电化学晶体管及其制备方法
CN116794141A (zh) * 2022-03-17 2023-09-22 武汉纺织大学 积累工作模式的有机电化学晶体管及复合半导体材料
CN115942756B (zh) * 2022-11-23 2026-04-24 武汉纺织大学 垂直型纤维基有机电化学晶体管及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936956A (en) * 1984-11-23 1990-06-26 Massachusetts Institute Of Technology Microelectrochemical devices based on inorganic redox active material and method for sensing
DE3721793A1 (de) * 1986-07-01 1988-04-07 Mitsubishi Electric Corp Elektrisches element mit verwendung von oxidations-reduktions-substanzen
JPH01202866A (ja) * 1988-02-09 1989-08-15 Seiko Epson Corp 分子素子
DE69018348T2 (de) * 1989-07-25 1995-08-03 Matsushita Electric Ind Co Ltd Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren.
JP3169617B2 (ja) * 1989-12-27 2001-05-28 日本石油化学株式会社 電気伝導度制御方法
EP0440957B1 (de) * 1990-02-08 1996-03-27 Bayer Ag Neue Polythiophen-Dispersionen, ihre Herstellung und ihre Verwendung
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
JPH0575127A (ja) * 1991-09-17 1993-03-26 Canon Inc 薄膜半導体装置
SE517720C2 (sv) 1996-08-08 2002-07-09 Olle Inganaes Elektrokemiska komponenter baserade på polymerer
EP0968537B1 (en) 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
US6207034B1 (en) * 1997-12-05 2001-03-27 Massachusetts Institute Of Technology Method of manufacture of polymer transistors with controllable gap
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
US6444400B1 (en) * 1999-08-23 2002-09-03 Agfa-Gevaert Method of making an electroconductive pattern on a support

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WO2002071505A8 (en) 2004-06-03
SE0100748D0 (sv) 2001-03-07
US20020158295A1 (en) 2002-10-31
WO2002071505A1 (en) 2002-09-12
CN1494743A (zh) 2004-05-05
JP5268075B2 (ja) 2013-08-21
US6806511B2 (en) 2004-10-19
JP5043283B2 (ja) 2012-10-10
CN100352077C (zh) 2007-11-28
SE520339C2 (sv) 2003-06-24
JP2010177678A (ja) 2010-08-12
JP2004529491A (ja) 2004-09-24

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