SE0102134L - Förfarande och anordning för att alstra plasma - Google Patents

Förfarande och anordning för att alstra plasma

Info

Publication number
SE0102134L
SE0102134L SE0102134A SE0102134A SE0102134L SE 0102134 L SE0102134 L SE 0102134L SE 0102134 A SE0102134 A SE 0102134A SE 0102134 A SE0102134 A SE 0102134A SE 0102134 L SE0102134 L SE 0102134L
Authority
SE
Sweden
Prior art keywords
produced
discharges
cathode
metal
gas
Prior art date
Application number
SE0102134A
Other languages
Unknown language ( )
English (en)
Other versions
SE0102134D0 (sv
SE525231C2 (sv
Inventor
Vladimir Kouznetsov
Original Assignee
Chemfilt R & D Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemfilt R & D Ab filed Critical Chemfilt R & D Ab
Priority to SE0102134A priority Critical patent/SE525231C2/sv
Publication of SE0102134D0 publication Critical patent/SE0102134D0/sv
Priority to PCT/SE2002/001160 priority patent/WO2002103078A1/en
Priority to US10/480,826 priority patent/US8685213B2/en
Priority to EP02741573.6A priority patent/EP1404889B1/en
Priority to JP2003505388A priority patent/JP4461253B2/ja
Priority to EP11190828.1A priority patent/EP2434525B9/en
Publication of SE0102134L publication Critical patent/SE0102134L/sv
Publication of SE525231C2 publication Critical patent/SE525231C2/sv
Priority to US14/190,000 priority patent/US20140291140A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
SE0102134A 2001-06-14 2001-06-14 Förfarande och anordning för att alstra plasma SE525231C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE0102134A SE525231C2 (sv) 2001-06-14 2001-06-14 Förfarande och anordning för att alstra plasma
PCT/SE2002/001160 WO2002103078A1 (en) 2001-06-14 2002-06-14 Method and apparatus for plasma generation
US10/480,826 US8685213B2 (en) 2001-06-14 2002-06-14 Method and apparatus for plasma generation
EP02741573.6A EP1404889B1 (en) 2001-06-14 2002-06-14 Method and apparatus for plasma generation
JP2003505388A JP4461253B2 (ja) 2001-06-14 2002-06-14 プラズマ発生方法
EP11190828.1A EP2434525B9 (en) 2001-06-14 2002-06-14 Method and apparatus for plasma generation
US14/190,000 US20140291140A1 (en) 2001-06-14 2014-02-25 Method and apparatus for plasma generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0102134A SE525231C2 (sv) 2001-06-14 2001-06-14 Förfarande och anordning för att alstra plasma

Publications (3)

Publication Number Publication Date
SE0102134D0 SE0102134D0 (sv) 2001-06-14
SE0102134L true SE0102134L (sv) 2003-02-14
SE525231C2 SE525231C2 (sv) 2005-01-11

Family

ID=20284499

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0102134A SE525231C2 (sv) 2001-06-14 2001-06-14 Förfarande och anordning för att alstra plasma

Country Status (5)

Country Link
US (2) US8685213B2 (sv)
EP (2) EP1404889B1 (sv)
JP (1) JP4461253B2 (sv)
SE (1) SE525231C2 (sv)
WO (1) WO2002103078A1 (sv)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US7327089B2 (en) * 2002-09-19 2008-02-05 Applied Process Technologies, Inc. Beam plasma source
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
US6896775B2 (en) * 2002-10-29 2005-05-24 Zond, Inc. High-power pulsed magnetically enhanced plasma processing
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US7138343B2 (en) 2002-11-29 2006-11-21 Oc Oerlikon Balzers Ag Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber
US20040112735A1 (en) * 2002-12-17 2004-06-17 Applied Materials, Inc. Pulsed magnetron for sputter deposition
GB2401116A (en) * 2003-04-28 2004-11-03 Hauzer Techno Coating Bv Plasma Assisted Chemical Vapour Deposition
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7663319B2 (en) * 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
EP1580298A1 (fr) * 2004-03-22 2005-09-28 Materia Nova A.S.B.L Dépôt par pulverisation cathodique magnétron en régime impulsionnel avec préionisation
US7750575B2 (en) 2004-04-07 2010-07-06 Zond, Inc. High density plasma source
EP1609882A1 (de) * 2004-06-24 2005-12-28 METAPLAS IONON Oberflächenveredelungstechnik GmbH Kathodenzerstäubungsvorrichtung und -verfahren
EP1803142A1 (en) * 2004-09-24 2007-07-04 Zond, Inc. Apparatus for generating high-current electrical discharges
US20060140326A1 (en) * 2004-10-08 2006-06-29 The Regents Of The University Of Ca Portable low energy neutron source for high sensitivity material characterization
US20110176648A1 (en) * 2004-10-08 2011-07-21 Rowland Mark S Portable low energy neutron source for high sensitivity material characterization
SE0402644D0 (sv) * 2004-11-02 2004-11-02 Biocell Ab Method and apparatus for producing electric discharges
US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
US7507977B2 (en) * 2006-03-14 2009-03-24 Axcelis Technologies, Inc. System and method of ion beam control in response to a beam glitch
US20080121515A1 (en) * 2006-11-27 2008-05-29 Seagate Technology Llc Magnetron sputtering utilizing halbach magnet arrays
TWI464282B (zh) * 2006-12-12 2014-12-11 歐瑞康先進科技股份有限公司 具有高能脈衝磁管噴濺之射頻基板偏壓
US8217299B2 (en) 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
EP2188411B1 (en) * 2007-08-30 2011-10-26 Koninklijke Philips Electronics N.V. Sputtering system
DE102007044071A1 (de) * 2007-09-14 2009-04-02 Thales Electron Devices Gmbh Antriebsanordnung in einem Raumflugkörper
WO2009079358A1 (en) * 2007-12-14 2009-06-25 The Regents Of The University Of California Very low pressure high power impulse triggered magnetron sputtering
EP2272080B1 (de) 2008-04-28 2012-08-01 CemeCon AG Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
PL2157205T3 (pl) * 2008-07-29 2012-04-30 Sulzer Metaplas Gmbh Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy
US8044594B2 (en) 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
DE102008050499B4 (de) 2008-10-07 2014-02-06 Systec System- Und Anlagentechnik Gmbh & Co. Kg PVD-Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens und nach dem Verfahren beschichtete Substrate
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
EP2219205B1 (en) 2009-02-17 2014-06-04 Solvix GmbH A power supply device for plasma processing
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
CN102409303A (zh) * 2010-09-25 2012-04-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种靶材功率加载方法、靶材电源及半导体处理设备
CN102108492A (zh) * 2011-01-18 2011-06-29 中国科学院力学研究所 一种基于高功率脉冲磁控溅射的离化率可控镀膜设备
EP2541584B1 (en) * 2011-06-27 2018-08-08 TRUMPF Huettinger Sp. Z o. o. Generating a highly ionized plasma in a plasma chamber
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US9129776B2 (en) 2012-11-01 2015-09-08 Advanced Energy Industries, Inc. Differing boost voltages applied to two or more anodeless electrodes for plasma processing
US9226380B2 (en) 2012-11-01 2015-12-29 Advanced Energy Industries, Inc. Adjustable non-dissipative voltage boosting snubber network
US9287098B2 (en) 2012-11-01 2016-03-15 Advanced Energy Industries, Inc. Charge removal from electrodes in unipolar sputtering system
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
CN104451578A (zh) * 2014-11-17 2015-03-25 中国科学院力学研究所 一种直流耦合型高能脉冲磁控溅射方法
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US9812305B2 (en) 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US10373811B2 (en) * 2015-07-24 2019-08-06 Aes Global Holdings, Pte. Ltd Systems and methods for single magnetron sputtering
SE540533C2 (en) * 2016-02-12 2018-09-25 Plasmatrix Mat Ab Cutting tool assembly with controlled resilience using hyperelastic materials
US20180108519A1 (en) * 2016-10-17 2018-04-19 Applied Materials, Inc. POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS)
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10256067B1 (en) 2018-01-02 2019-04-09 General Electric Company Low voltage drop, cross-field, gas switch and method of operation
US10665402B2 (en) 2018-02-08 2020-05-26 General Electric Company High voltage, cross-field, gas switch and method of operation
US10403466B1 (en) 2018-03-23 2019-09-03 General Electric Company Low sputtering, cross-field, gas switch and method of operation
US10867776B2 (en) * 2018-05-09 2020-12-15 Applied Materials, Inc. Physical vapor deposition in-chamber electro-magnet
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
TWI686106B (zh) * 2019-01-25 2020-02-21 國立清華大學 場發射手持式常壓電漿產生裝置
CN110004426A (zh) * 2019-04-19 2019-07-12 东莞超汇链条有限公司 连续式镀膜系统的镀膜方法及其方法所得的镀膜
CN115461491B (zh) * 2020-07-01 2024-08-23 应用材料公司 用于操作腔室的方法、用于处理基板的装置和基板处理系统
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
CN112080728B (zh) * 2020-08-12 2022-05-10 北京航空航天大学 HiPIMS系统及减小HiPIMS放电电流延迟的方法
RU2754915C1 (ru) * 2020-10-27 2021-09-08 федеральное государственное автономное образовательное учреждение высшего образования "Пермский национальный исследовательский политехнический университет" Способ плазменной обработки металлических изделий
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
CN115704086B (zh) * 2021-08-12 2024-11-15 中国科学院上海硅酸盐研究所 一种离子同极溅射镀膜装置及方法
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN114351104B (zh) * 2022-03-21 2022-06-07 山西金山磁材有限公司 一种磁控溅射平面靶磁通装置
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12532679B2 (en) * 2022-10-11 2026-01-20 Samsung Electronics Co., Ltd. Substrate processing method, substrate processing device, and method of manufacturing a semiconductor device
WO2025099727A1 (en) * 2023-11-09 2025-05-15 N.T. Tao Ltd. High power plasma switch with active magnetic cut-off control

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562734A (en) * 1978-11-01 1980-05-12 Toshiba Corp Ion source and ion etching method
US4495399A (en) * 1981-03-26 1985-01-22 Cann Gordon L Micro-arc milling of metallic and non-metallic substrates
DE3700633C2 (de) * 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
US4963239A (en) * 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US5252194A (en) 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
DE4127317C2 (de) * 1991-08-17 1999-09-02 Leybold Ag Einrichtung zum Behandeln von Substraten
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
JPH06145975A (ja) * 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
DE4401986A1 (de) 1994-01-25 1995-07-27 Dresden Vakuumtech Gmbh Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür
DE4412906C1 (de) * 1994-04-14 1995-07-13 Fraunhofer Ges Forschung Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US5990668A (en) * 1997-11-07 1999-11-23 Sierra Applied Sciences, Inc. A.C. power supply having combined regulator and pulsing circuits
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
JP4118964B2 (ja) 1998-03-18 2008-07-16 新電元工業株式会社 消弧回路及び消弧方法
US6224725B1 (en) * 1999-02-09 2001-05-01 Isoflux, Inc. Unbalanced magnetron sputtering with auxiliary cathode
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US6853142B2 (en) * 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma

Also Published As

Publication number Publication date
US20140291140A1 (en) 2014-10-02
EP1404889B1 (en) 2017-12-20
US8685213B2 (en) 2014-04-01
WO2002103078A1 (en) 2002-12-27
EP2434525B1 (en) 2013-04-24
EP2434525B9 (en) 2013-11-13
EP2434525A1 (en) 2012-03-28
SE0102134D0 (sv) 2001-06-14
JP4461253B2 (ja) 2010-05-12
JP2004536426A (ja) 2004-12-02
SE525231C2 (sv) 2005-01-11
EP1404889A1 (en) 2004-04-07
US20050092596A1 (en) 2005-05-05

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