SE424679B - Anordning vid jonbombarderingsutrustning - Google Patents

Anordning vid jonbombarderingsutrustning

Info

Publication number: SE424679B
Authority: SE; Sweden
Prior art keywords: target; ion; ion beam; current; source
Prior art date: 1977-05-05

Application number

SE7804844A

Other languages

English (en)

Swedish (sv)

Other versions

SE7804844L (sv

Inventor

C M Mckenna

W F Mueller

Original Assignee

Ibm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-05-05

Filing date

1978-04-27

Publication date

1982-08-02

1978-04-27 Application filed by Ibm filed Critical Ibm

1978-11-06 Publication of SE7804844L publication Critical patent/SE7804844L/xx

1982-08-02 Publication of SE424679B publication Critical patent/SE424679B/sv

Links

238000010884 ion-beam technique Methods 0.000 claims description 36
150000002500 ions Chemical class 0.000 claims description 16
230000005855 radiation Effects 0.000 claims description 9
238000001816 cooling Methods 0.000 claims description 6
239000002826 coolant Substances 0.000 claims description 4
238000010849 ion bombardment Methods 0.000 claims description 3
238000005468 ion implantation Methods 0.000 description 13
229910052785 arsenic Inorganic materials 0.000 description 11
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 11
230000001276 controlling effect Effects 0.000 description 9
238000002513 implantation Methods 0.000 description 9
239000010410 layer Substances 0.000 description 9
238000004980 dosimetry Methods 0.000 description 7
239000000463 material Substances 0.000 description 7
239000012777 electrically insulating material Substances 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
235000012431 wafers Nutrition 0.000 description 5
238000005259 measurement Methods 0.000 description 4
230000000903 blocking effect Effects 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000007788 liquid Substances 0.000 description 3
238000000034 method Methods 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000004048 modification Effects 0.000 description 3
239000000758 substrate Substances 0.000 description 3
230000002411 adverse Effects 0.000 description 2
238000004458 analytical method Methods 0.000 description 2
239000004020 conductor Substances 0.000 description 2
238000011109 contamination Methods 0.000 description 2
230000006378 damage Effects 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000007943 implant Substances 0.000 description 2
239000011810 insulating material Substances 0.000 description 2
238000012544 monitoring process Methods 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
240000007124 Brassica oleracea Species 0.000 description 1
235000003899 Brassica oleracea var acephala Nutrition 0.000 description 1
235000011301 Brassica oleracea var capitata Nutrition 0.000 description 1
235000001169 Brassica oleracea var oleracea Nutrition 0.000 description 1
241000556720 Manga Species 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000013461 design Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000000605 extraction Methods 0.000 description 1
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
238000002309 gasification Methods 0.000 description 1
ITSOJLMPDIVXQY-UHFFFAOYSA-N iridium thorium Chemical compound [Ir].[Th] ITSOJLMPDIVXQY-UHFFFAOYSA-N 0.000 description 1
239000002245 particle Substances 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000009827 uniform distribution Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24405—Faraday cages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Measurement Of Radiation (AREA)

SE7804844A 1977-05-05 1978-04-27 Anordning vid jonbombarderingsutrustning SE424679B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/794,275 US4118630A (en)	1977-05-05	1977-05-05	Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface

Publications (2)

Publication Number	Publication Date
SE7804844L SE7804844L (sv)	1978-11-06
SE424679B true SE424679B (sv)	1982-08-02

Family

ID=25162193

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE7804844A SE424679B (sv)	1977-05-05	1978-04-27	Anordning vid jonbombarderingsutrustning

Country Status (6)

Country	Link
US (1)	US4118630A (fr)
JP (1)	JPS5842939B2 (fr)
AU (1)	AU516164B2 (fr)
BR (1)	BR7802843A (fr)
CA (1)	CA1088218A (fr)
SE (1)	SE424679B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5839376B2 (ja) *	1978-10-30	1983-08-30	富士通株式会社	イオン注入法
US4234797A (en) *	1979-05-23	1980-11-18	Nova Associates, Inc.	Treating workpieces with beams
US4247781A (en) *	1979-06-29	1981-01-27	International Business Machines Corporation	Cooled target disc for high current ion implantation method and apparatus
US4261762A (en) *	1979-09-14	1981-04-14	Eaton Corporation	Method for conducting heat to or from an article being treated under vacuum
US4514636A (en) *	1979-09-14	1985-04-30	Eaton Corporation	Ion treatment apparatus
US4909314A (en) *	1979-12-21	1990-03-20	Varian Associates, Inc.	Apparatus for thermal treatment of a wafer in an evacuated environment
US4680061A (en) *	1979-12-21	1987-07-14	Varian Associates, Inc.	Method of thermal treatment of a wafer in an evacuated environment
US4743570A (en) *	1979-12-21	1988-05-10	Varian Associates, Inc.	Method of thermal treatment of a wafer in an evacuated environment
US4463255A (en) *	1980-09-24	1984-07-31	Varian Associates, Inc.	Apparatus for enhanced neutralization of positively charged ion beam
FR2490873A1 (fr) *	1980-09-24	1982-03-26	Varian Associates	Procede et dispositif destines a produire une neutralisation amelioree d'un faisceau d'ions positifs
JPS57174467A (en) *	1981-04-20	1982-10-27	Inoue Japax Res Inc	Ion working device
US4475045A (en) *	1982-05-24	1984-10-02	Varian Associates, Inc.	Rapid pumpdown for high vacuum processing
US4847504A (en) *	1983-08-15	1989-07-11	Applied Materials, Inc.	Apparatus and methods for ion implantation
US4595837A (en) *	1983-09-16	1986-06-17	Rca Corporation	Method for preventing arcing in a device during ion-implantation
US4786814A (en) *	1983-09-16	1988-11-22	General Electric Company	Method of reducing electrostatic charge on ion-implanted devices
US4675530A (en) *	1985-07-11	1987-06-23	Eaton Corporation	Charge density detector for beam implantation
JPS62103951A (ja) *	1985-10-29	1987-05-14	Toshiba Corp	イオン注入装置
US4804852A (en) *	1987-01-29	1989-02-14	Eaton Corporation	Treating work pieces with electro-magnetically scanned ion beams
JPH01220350A (ja) *	1988-02-26	1989-09-04	Hitachi Ltd	帯電抑制方法及びその装置を用いた粒子線照射装置
US4943728A (en) *	1989-02-28	1990-07-24	Eaton Corporation	Beam pattern control system for an ion implanter
US5136171A (en) *	1990-03-02	1992-08-04	Varian Associates, Inc.	Charge neutralization apparatus for ion implantation system
US5113074A (en) *	1991-01-29	1992-05-12	Eaton Corporation	Ion beam potential detection probe
US5466929A (en) *	1992-02-21	1995-11-14	Hitachi, Ltd.	Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US5319212A (en) *	1992-10-07	1994-06-07	Genus, Inc.	Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5475231A (en) *	1993-09-21	1995-12-12	Honeywell Inc.	Apparatus for monitoring ion beams with an electrically isolated aperture
US5629528A (en)	1996-01-16	1997-05-13	Varian Associates, Inc.	Charged particle beam system having beam-defining slit formed by rotating cyclinders

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3071686A (en) *	1960-02-09	1963-01-01	George J Hanggi	Method and apparatus for low temperature analysis
JPS491058B1 (fr) *	1969-09-24	1974-01-11
US4013891A (en) *	1975-12-15	1977-03-22	Ibm Corporation	Method for varying the diameter of a beam of charged particles

1977
- 1977-05-05 US US05/794,275 patent/US4118630A/en not_active Expired - Lifetime
1978
- 1978-03-20 JP JP53031164A patent/JPS5842939B2/ja not_active Expired
- 1978-03-22 CA CA299,581A patent/CA1088218A/fr not_active Expired
- 1978-04-13 AU AU35080/78A patent/AU516164B2/en not_active Expired
- 1978-04-27 SE SE7804844A patent/SE424679B/sv not_active IP Right Cessation
- 1978-05-05 BR BR787802843A patent/BR7802843A/pt unknown

Also Published As

Publication number	Publication date
CA1088218A (fr)	1980-10-21
AU3508078A (en)	1979-10-18
BR7802843A (pt)	1979-01-16
JPS53136799A (en)	1978-11-29
AU516164B2 (en)	1981-05-21
US4118630A (en)	1978-10-03
SE7804844L (sv)	1978-11-06
JPS5842939B2 (ja)	1983-09-22

Legal Events

Date

Code

Title

Description

1995-01-31

NUG

Patent has lapsed

Ref document number: 7804844-4

Effective date: 19931110

Format of ref document f/p: F

Publication	Publication Date	Title
SE424679B (sv)	1982-08-02	Anordning vid jonbombarderingsutrustning
US4135097A (en)	1979-01-16	Ion implantation apparatus for controlling the surface potential of a target surface
JP2704438B2 (ja)	1998-01-26	イオン注入装置
US6259765B1 (en)	2001-07-10	X-ray tube comprising an electron source with microtips and magnetic guiding means
EP0291279B1 (fr)	1992-03-25	Dispositif et procédés pour réduire la charge des pastilles pour implantation d'ions
US5136171A (en)	1992-08-04	Charge neutralization apparatus for ion implantation system
JP5212760B2 (ja)	2013-06-19	イオン注入装置用のイオン源およびそのためのリペラ
KR101407694B1 (ko)	2014-06-17	강화된 새로운 이온 소스
JP4113032B2 (ja)	2008-07-02	電子銃及び電子ビーム露光装置
US7655930B2 (en)	2010-02-02	Ion source arc chamber seal
JPH06236747A (ja)	1994-08-23	イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
WO2004086439A2 (fr)	2004-10-07	Procede et appareil de commande d'un courant de faisceau d'electrons
US12051560B2 (en)	2024-07-30	Ion gun and ion milling machine
US6348764B1 (en)	2002-02-19	Indirect hot cathode (IHC) ion source
McKenna	1979	High current dosimetry techniques
US10431415B2 (en)	2019-10-01	X-ray tube ion barrier
Prewett et al.	1981	Liquid metal source of gold ions
EP0487656B1 (fr)	1995-08-02	Appareil de neutralisation de charge pour systeme d'implantation d'ions
US20240379321A1 (en)	2024-11-14	Ion implantation system
Forneris et al.	1981	Ion implantation apparatus
JP2594949B2 (ja)	1997-03-26	薄膜形成装置
JP2684475B2 (ja)	1997-12-03	原子線注入装置
TW202516566A (zh)	2025-04-16	離子植入系統及用於其之整合氣體盒
Terzic et al.	1996	A new broad-beam alkali ion source for use in ultra high vacuum
JPH0762245B2 (ja)	1995-07-05	薄膜形成装置