SE443476B - Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna - Google Patents

Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna

Info

Publication number
SE443476B
SE443476B SE8008879A SE8008879A SE443476B SE 443476 B SE443476 B SE 443476B SE 8008879 A SE8008879 A SE 8008879A SE 8008879 A SE8008879 A SE 8008879A SE 443476 B SE443476 B SE 443476B
Authority
SE
Sweden
Prior art keywords
depressions
semiconductor
contact metal
zone
produced
Prior art date
Application number
SE8008879A
Other languages
English (en)
Swedish (sv)
Other versions
SE8008879L (sv
Inventor
H Schefer
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of SE8008879L publication Critical patent/SE8008879L/xx
Publication of SE443476B publication Critical patent/SE443476B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Footwear And Its Accessory, Manufacturing Method And Apparatuses (AREA)
SE8008879A 1978-12-23 1980-12-17 Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna SE443476B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2855972A DE2855972C2 (de) 1978-12-23 1978-12-23 Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
SE8008879L SE8008879L (sv) 1980-12-17
SE443476B true SE443476B (sv) 1986-02-24

Family

ID=6058262

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8008879A SE443476B (sv) 1978-12-23 1980-12-17 Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna

Country Status (8)

Country Link
US (1) US4525924A (it)
EP (1) EP0020666A1 (it)
JP (1) JPS55501161A (it)
DE (1) DE2855972C2 (it)
GB (1) GB2064869B (it)
IT (1) IT1126607B (it)
SE (1) SE443476B (it)
WO (1) WO1980001334A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
GB2285882B (en) * 1994-01-14 1997-12-17 Westinghouse Brake & Signal Semiconductor switching devices
US6033489A (en) * 1998-05-29 2000-03-07 Fairchild Semiconductor Corp. Semiconductor substrate and method of making same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US3039028A (en) * 1955-09-26 1962-06-12 Hoffman Electronics Corp Double based diode
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
NL125803C (it) * 1961-01-16
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
DE1916555A1 (de) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
FR2126904B1 (it) * 1970-12-07 1974-04-26 Silec Semi Conducteurs
JPS567304B2 (it) * 1972-08-28 1981-02-17
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
DE2855972A1 (de) 1980-06-26
SE8008879L (sv) 1980-12-17
IT1126607B (it) 1986-05-21
WO1980001334A1 (fr) 1980-06-26
GB2064869A (en) 1981-06-17
IT7928210A0 (it) 1979-12-19
DE2855972C2 (de) 1984-09-27
EP0020666A1 (de) 1981-01-07
GB2064869B (en) 1983-05-18
US4525924A (en) 1985-07-02
JPS55501161A (it) 1980-12-18

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