SE461491B - Monolitisk optokopplare - Google Patents
Monolitisk optokopplareInfo
- Publication number
- SE461491B SE461491B SE8704822A SE8704822A SE461491B SE 461491 B SE461491 B SE 461491B SE 8704822 A SE8704822 A SE 8704822A SE 8704822 A SE8704822 A SE 8704822A SE 461491 B SE461491 B SE 461491B
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- components
- layer
- layers
- component
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000005855 radiation Effects 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 5
- 238000012216 screening Methods 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
- H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
- H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Networks Using Active Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8704822A SE461491B (sv) | 1987-12-02 | 1987-12-02 | Monolitisk optokopplare |
| AT88119766T ATE74230T1 (de) | 1987-12-02 | 1988-11-26 | Monolithischer optokoppler. |
| EP88119766A EP0318883B1 (de) | 1987-12-02 | 1988-11-26 | Monolithischer Optokoppler |
| DE8888119766T DE3869566D1 (de) | 1987-12-02 | 1988-11-26 | Monolithischer optokoppler. |
| JP63305103A JPH01196183A (ja) | 1987-12-02 | 1988-12-01 | モノリシック光結合器 |
| US07/278,895 US4933561A (en) | 1987-12-02 | 1988-12-02 | Monolithic optocoupler with electrically conducting layer for diverting interference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8704822A SE461491B (sv) | 1987-12-02 | 1987-12-02 | Monolitisk optokopplare |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8704822D0 SE8704822D0 (sv) | 1987-12-02 |
| SE8704822L SE8704822L (sv) | 1989-06-03 |
| SE461491B true SE461491B (sv) | 1990-02-19 |
Family
ID=20370479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8704822A SE461491B (sv) | 1987-12-02 | 1987-12-02 | Monolitisk optokopplare |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4933561A (de) |
| EP (1) | EP0318883B1 (de) |
| JP (1) | JPH01196183A (de) |
| AT (1) | ATE74230T1 (de) |
| DE (1) | DE3869566D1 (de) |
| SE (1) | SE461491B (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5357122A (en) * | 1991-09-05 | 1994-10-18 | Sony Corporation | Three-dimensional optical-electronic integrated circuit device with raised sections |
| SE469204B (sv) * | 1991-10-01 | 1993-05-24 | Asea Brown Boveri | Monolitisk optokopplare |
| US5237434A (en) * | 1991-11-05 | 1993-08-17 | Mcnc | Microelectronic module having optical and electrical interconnects |
| JP2513976B2 (ja) * | 1991-12-13 | 1996-07-10 | エイ・ティ・アンド・ティ・コーポレーション | 複数の球状部品の被覆方法 |
| US5285078A (en) * | 1992-01-24 | 1994-02-08 | Nippon Steel Corporation | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
| US5321294A (en) * | 1992-08-31 | 1994-06-14 | Matsushita Electric Industrial Co., Ltd. | Shift register having optically bistable elements coupled by an optical waveguide layer |
| JPH0715030A (ja) * | 1993-06-07 | 1995-01-17 | Motorola Inc | 線形集積光結合素子およびその製造方法 |
| US5438210A (en) * | 1993-10-22 | 1995-08-01 | Worley; Eugene R. | Optical isolation connections using integrated circuit techniques |
| ES2102937B1 (es) * | 1994-03-07 | 1998-04-01 | Telefonica Nacional Espana Co | Circuito transmisor-receptor. |
| JP3505488B2 (ja) * | 1999-10-12 | 2004-03-08 | 古河電気工業株式会社 | 光モジュール |
| DE60206132T2 (de) * | 2002-01-31 | 2006-06-22 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren und Einrichtung zur hervorragenden galvanischen Isolierung zwischen zwei Niederspannungsschaltungen in einer intergrierten Opto-Isolator-Einrichtung |
| JP4553026B2 (ja) * | 2008-03-27 | 2010-09-29 | 富士ゼロックス株式会社 | 光伝送装置 |
| KR102672299B1 (ko) * | 2016-05-17 | 2024-06-04 | 더 유니버시티 오브 홍콩 | 자체(in situ) 실시간 강도 모니터링을 위한 일체형으로 통합된 광감지기들을 구비한 발광 다이오드(LED) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436548A (en) * | 1964-06-29 | 1969-04-01 | Texas Instruments Inc | Combination p-n junction light emitter and photocell having electrostatic shielding |
| DE1614865A1 (de) * | 1967-09-27 | 1970-12-23 | Telefunken Patent | Optoelektronische Halbleiteranordnung |
| US3748480A (en) * | 1970-11-02 | 1973-07-24 | Motorola Inc | Monolithic coupling device including light emitter and light sensor |
| US3818451A (en) * | 1972-03-15 | 1974-06-18 | Motorola Inc | Light-emitting and light-receiving logic array |
| US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
| JPS5250184A (en) * | 1975-10-20 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Photo coupler |
| US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
| US4112308A (en) * | 1976-03-29 | 1978-09-05 | Burr-Brown Research Corporation | Optical coupling system |
| US4104533A (en) * | 1977-02-28 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Navy | Wideband optical isolator |
| US4212020A (en) * | 1978-07-21 | 1980-07-08 | California Institute Of Technology | Solid state electro-optical devices on a semi-insulating substrate |
| US4274104A (en) * | 1979-05-21 | 1981-06-16 | International Business Machines Corporation | Electrooptical integrated circuit communication |
| JPS56131973A (en) * | 1980-03-19 | 1981-10-15 | Matsushita Electronics Corp | Luminiscent device |
| JPS5967671A (ja) * | 1982-10-12 | 1984-04-17 | Nec Corp | 発光受光素子 |
| JPS59180514A (ja) * | 1983-03-31 | 1984-10-13 | Toshiba Corp | 光受信モジユ−ル |
| FR2562328B1 (fr) * | 1984-03-30 | 1987-11-27 | Menigaux Louis | Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede |
| JPS61159776A (ja) * | 1985-01-04 | 1986-07-19 | Oki Electric Ind Co Ltd | 光制御非直線素子 |
| JPS6223181A (ja) * | 1985-07-23 | 1987-01-31 | Matsushita Electric Ind Co Ltd | 光集積化素子 |
-
1987
- 1987-12-02 SE SE8704822A patent/SE461491B/sv not_active IP Right Cessation
-
1988
- 1988-11-26 DE DE8888119766T patent/DE3869566D1/de not_active Expired - Fee Related
- 1988-11-26 AT AT88119766T patent/ATE74230T1/de not_active IP Right Cessation
- 1988-11-26 EP EP88119766A patent/EP0318883B1/de not_active Expired - Lifetime
- 1988-12-01 JP JP63305103A patent/JPH01196183A/ja active Pending
- 1988-12-02 US US07/278,895 patent/US4933561A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| SE8704822L (sv) | 1989-06-03 |
| SE8704822D0 (sv) | 1987-12-02 |
| EP0318883A1 (de) | 1989-06-07 |
| US4933561A (en) | 1990-06-12 |
| EP0318883B1 (de) | 1992-03-25 |
| DE3869566D1 (de) | 1992-04-30 |
| JPH01196183A (ja) | 1989-08-07 |
| ATE74230T1 (de) | 1992-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
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| NUG | Patent has lapsed |
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