SE501722C2 - Ytemitterande laseranordning med vertikal kavitet - Google Patents

Ytemitterande laseranordning med vertikal kavitet

Info

Publication number
SE501722C2
SE501722C2 SE9302950A SE9302950A SE501722C2 SE 501722 C2 SE501722 C2 SE 501722C2 SE 9302950 A SE9302950 A SE 9302950A SE 9302950 A SE9302950 A SE 9302950A SE 501722 C2 SE501722 C2 SE 501722C2
Authority
SE
Sweden
Prior art keywords
active
areas
optical
contact
laser
Prior art date
Application number
SE9302950A
Other languages
English (en)
Swedish (sv)
Other versions
SE9302950L (sv
SE9302950D0 (sv
Inventor
Olle Nilsson
Original Assignee
Ellemtel Utvecklings Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ellemtel Utvecklings Ab filed Critical Ellemtel Utvecklings Ab
Priority to SE9302950A priority Critical patent/SE501722C2/sv
Publication of SE9302950D0 publication Critical patent/SE9302950D0/xx
Priority to JP7508625A priority patent/JPH09502571A/ja
Priority to DE69407603T priority patent/DE69407603T2/de
Priority to CA002169442A priority patent/CA2169442A1/en
Priority to PCT/SE1994/000803 priority patent/WO1995007566A1/en
Priority to EP94926435A priority patent/EP0717883B1/en
Publication of SE9302950L publication Critical patent/SE9302950L/xx
Publication of SE501722C2 publication Critical patent/SE501722C2/sv
Priority to US08/775,886 priority patent/US5781575A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
SE9302950A 1993-09-10 1993-09-10 Ytemitterande laseranordning med vertikal kavitet SE501722C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9302950A SE501722C2 (sv) 1993-09-10 1993-09-10 Ytemitterande laseranordning med vertikal kavitet
JP7508625A JPH09502571A (ja) 1993-09-10 1994-09-01 垂直キャビティを有する表面発光レーザー素子
DE69407603T DE69407603T2 (de) 1993-09-10 1994-09-01 Oberflächenemittierende laservorrichtung mit einem vertikalen resonator
CA002169442A CA2169442A1 (en) 1993-09-10 1994-09-01 Surface emitting laser device with a vertical cavity
PCT/SE1994/000803 WO1995007566A1 (en) 1993-09-10 1994-09-01 Surface emitting laser device with a vertical cavity
EP94926435A EP0717883B1 (en) 1993-09-10 1994-09-01 Surface emitting laser device with a vertical cavity
US08/775,886 US5781575A (en) 1993-09-10 1997-01-02 Surface emitting laser device with a vertical cavity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9302950A SE501722C2 (sv) 1993-09-10 1993-09-10 Ytemitterande laseranordning med vertikal kavitet

Publications (3)

Publication Number Publication Date
SE9302950D0 SE9302950D0 (sv) 1993-09-10
SE9302950L SE9302950L (sv) 1995-03-11
SE501722C2 true SE501722C2 (sv) 1995-05-02

Family

ID=20391056

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9302950A SE501722C2 (sv) 1993-09-10 1993-09-10 Ytemitterande laseranordning med vertikal kavitet

Country Status (7)

Country Link
US (1) US5781575A (ja)
EP (1) EP0717883B1 (ja)
JP (1) JPH09502571A (ja)
CA (1) CA2169442A1 (ja)
DE (1) DE69407603T2 (ja)
SE (1) SE501722C2 (ja)
WO (1) WO1995007566A1 (ja)

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US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
FR2761537B1 (fr) * 1997-04-01 1999-06-11 Thomson Csf Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg
WO1999039405A2 (de) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Halbleiterlaser-chip
DE19954093A1 (de) * 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
US6816525B2 (en) 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
WO2002071562A2 (en) * 2001-03-02 2002-09-12 Science & Technology Corporation @ Unm Quantum dot vertical cavity surface emitting laser
DE10147353C2 (de) * 2001-09-26 2003-12-18 Infineon Technologies Ag Halbleiterlaser mit mindestens zwei optisch aktiven Bereichen
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
DE10251824A1 (de) * 2002-11-01 2004-05-19 Technische Universität Dresden Optoelektronisches Bauelement zur Erzeugung kohärenter Strahlung im Terahertz-Frequenzbereich
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7282732B2 (en) * 2003-10-24 2007-10-16 Stc. Unm Quantum dot structures
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US20070130153A1 (en) * 2005-12-02 2007-06-07 Palm, Inc. Techniques to communicate and process location information from communications networks on a mobile computing device
DE102006010728A1 (de) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung
WO2017151846A1 (en) * 2016-03-04 2017-09-08 Princeton Optronics, Inc. High-speed vcsel device
WO2021133827A2 (en) * 2019-12-24 2021-07-01 Array Photonics, Inc. Stacked semiconductor lasers with controlled spectral emission

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Publication number Priority date Publication date Assignee Title
US4316156A (en) * 1979-07-12 1982-02-16 Xerox Corporation Optical repeater integrated lasers
JPS59104189A (ja) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
US4602370A (en) * 1983-05-12 1986-07-22 At&T Bell Laboratories Large optical cavity laser having a plurality of active layers
US4719630A (en) * 1986-03-24 1988-01-12 Xerox Corporation Phased array semiconductor lasers with uniform and stable supermode
US4817103A (en) * 1986-10-06 1989-03-28 University Of Illinois Semiconductor light emitting device with stacked active regions
JPS6395682A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp 端面発光素子
DE8806828U1 (de) * 1988-05-25 1988-09-01 Siemens AG, 1000 Berlin und 8000 München Lichtverteiler für eine Röntgendiagnostikeinrichtung
JPH02144983A (ja) * 1988-11-25 1990-06-04 Agency Of Ind Science & Technol 複数の活性層を有する半導体レーザ装置
US4916712A (en) * 1989-07-27 1990-04-10 Mcdonnell Douglas Corporation Optically pumped slab laser
JPH03124067A (ja) * 1989-10-07 1991-05-27 Showa Shell Sekiyu Kk 光起電力装置およびその製造方法
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5182757A (en) * 1990-09-12 1993-01-26 Seiko Epson Corporation Surface emission type semiconductor laser
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams

Also Published As

Publication number Publication date
JPH09502571A (ja) 1997-03-11
EP0717883B1 (en) 1997-12-29
SE9302950L (sv) 1995-03-11
DE69407603T2 (de) 1998-04-09
SE9302950D0 (sv) 1993-09-10
WO1995007566A1 (en) 1995-03-16
DE69407603D1 (de) 1998-02-05
CA2169442A1 (en) 1995-03-16
US5781575A (en) 1998-07-14
EP0717883A1 (en) 1996-06-26

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