SE506209C2 - Anordning för manipulation av ett synkrotronstrålknippe - Google Patents

Anordning för manipulation av ett synkrotronstrålknippe

Info

Publication number
SE506209C2
SE506209C2 SE9403946A SE9403946A SE506209C2 SE 506209 C2 SE506209 C2 SE 506209C2 SE 9403946 A SE9403946 A SE 9403946A SE 9403946 A SE9403946 A SE 9403946A SE 506209 C2 SE506209 C2 SE 506209C2
Authority
SE
Sweden
Prior art keywords
apertures
synchrotron
filter
synchrotron beam
object table
Prior art date
Application number
SE9403946A
Other languages
English (en)
Swedish (sv)
Other versions
SE9403946D0 (sv
SE9403946L (sv
Inventor
Bernd Seher
Frank Reuther
Lutz Mueller
Original Assignee
Jenoptik Jena Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Jena Gmbh filed Critical Jenoptik Jena Gmbh
Publication of SE9403946D0 publication Critical patent/SE9403946D0/xx
Publication of SE9403946L publication Critical patent/SE9403946L/xx
Publication of SE506209C2 publication Critical patent/SE506209C2/sv

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Particle Accelerators (AREA)
  • X-Ray Techniques (AREA)
SE9403946A 1994-07-09 1994-11-16 Anordning för manipulation av ett synkrotronstrålknippe SE506209C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4424274A DE4424274C1 (de) 1994-07-09 1994-07-09 Einrichtung zur Manipulation eines Synchrotronstrahlenbündels

Publications (3)

Publication Number Publication Date
SE9403946D0 SE9403946D0 (sv) 1994-11-16
SE9403946L SE9403946L (sv) 1996-01-10
SE506209C2 true SE506209C2 (sv) 1997-11-24

Family

ID=6522767

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9403946A SE506209C2 (sv) 1994-07-09 1994-11-16 Anordning för manipulation av ett synkrotronstrålknippe

Country Status (8)

Country Link
US (1) US5535250A (it)
JP (1) JP2642318B2 (it)
DE (1) DE4424274C1 (it)
FR (1) FR2722327B1 (it)
GB (1) GB2291326B (it)
IT (1) IT1267640B1 (it)
SE (1) SE506209C2 (it)
TW (1) TW336780U (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19846958C2 (de) * 1998-08-19 2001-06-13 Fraunhofer Ges Forschung Verfahren zur Herstellung einer Einrichtung zum Transport von kleinsten Flüssigkeitsmengen
FI110478B (fi) 2001-05-29 2003-02-14 Planmeca Oy Menetelmä ja laitteisto sädekeilan rajaamiseksi
DE10135307C2 (de) * 2001-07-19 2003-07-31 Deutsches Elektronen Synchr Hochleistungs-Strahlverschluss-und -Spaltsystem für Synchrotronstrahlung
DE10154461B4 (de) * 2001-11-08 2005-12-15 Siemens Ag Vorrichtung zum Filtern eines Strahlenbündels
WO2004048605A1 (ja) 2002-11-27 2004-06-10 Daiichi Pure Chemicals Co., Ltd. 特定リポ蛋白中の脂質測定法
CN1822239B (zh) * 2005-02-17 2010-06-23 Ge医疗系统环球技术有限公司 滤波器和x射线成像设备
DE102006057536A1 (de) * 2006-12-06 2008-06-12 Deutsches Elektronen-Synchrotron Desy Hochleistungs-Strahlverschluss- und Spaltsystem für Synchrotronstrahlung
EP2611531B1 (en) * 2010-08-30 2015-01-07 GEA Pharma Systems AG Fluid bed apparatus and method for processing a particulate material
WO2013003469A2 (en) * 2011-06-27 2013-01-03 Bioscan, Inc. Method and apparatus for automated indexing of pluralities of filter arrays
US11733171B2 (en) * 2018-09-11 2023-08-22 Kla Corporation Light attenuation device for high power UV inspection tool

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8016658U1 (de) * 1980-06-24 1980-10-09 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt Rechteckblende
FR2524655B1 (fr) * 1982-04-02 1985-10-18 Cgr Mev Bloc limiteur partiel d'un faisceau de rayonnement et collimateur comportant de tels blocs
EP0253283A3 (de) * 1986-07-15 1988-07-20 Siemens Aktiengesellschaft Anordnung zur Belichtung von Halbleiterscheiben mittels Synchrotronstrahlung in einem Lithographiegerät
DE68925323T2 (de) * 1988-09-14 1996-05-30 Canon K.K., Tokio/Tokyo Belichtungssteuerung in einem Röntgenbelichtungsapparat
JPH02234498A (ja) * 1989-03-07 1990-09-17 Nec Corp シンクロトロン放射光走査装置
US5040202A (en) * 1989-06-05 1991-08-13 General Electric Method and apparatus for reducing x-ray grid images
JP2697264B2 (ja) * 1990-08-03 1998-01-14 キヤノン株式会社 露光処理装置
JP2691319B2 (ja) * 1990-11-28 1997-12-17 株式会社ニコン 投影露光装置および走査露光方法
US5473410A (en) * 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5148032A (en) * 1991-06-28 1992-09-15 Siemens Medical Laboratories, Inc. Radiation emitting device with moveable aperture plate
JPH0574688A (ja) * 1991-09-12 1993-03-26 Soltec:Kk Ｘ線露光方法及びその装置
JPH05175103A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd Ｘ線露光装置
DE4229319C2 (de) * 1992-09-02 1995-03-16 Siemens Ag Filterwechsler für eine Strahlenquelle
US5371774A (en) * 1993-06-24 1994-12-06 Wisconsin Alumni Research Foundation X-ray lithography beamline imaging system

Also Published As

Publication number Publication date
JPH0829599A (ja) 1996-02-02
JP2642318B2 (ja) 1997-08-20
GB2291326A (en) 1996-01-17
SE9403946D0 (sv) 1994-11-16
FR2722327B1 (fr) 1997-10-24
GB2291326B (en) 1998-07-29
FR2722327A1 (fr) 1996-01-12
ITTO940989A1 (it) 1996-06-06
ITTO940989A0 (it) 1994-12-06
GB9507636D0 (en) 1995-05-31
DE4424274C1 (de) 1996-01-11
US5535250A (en) 1996-07-09
TW336780U (en) 1998-07-11
SE9403946L (sv) 1996-01-10
IT1267640B1 (it) 1997-02-07

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