SE510442C2 - Mikrochipslaser - Google Patents

Mikrochipslaser

Info

Publication number: SE510442C2
Authority: SE; Sweden
Prior art keywords: laser; microchip; cavity; phase matching; elements
Prior art date: 1996-09-05

Application number

SE9603234A

Other languages

English (en)

Swedish (sv)

Other versions

SE9603234D0 (sv

SE9603234L (sv

Inventor

Fredrik Laurell

Original Assignee

Fredrik Laurell

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-09-05

Filing date

1996-09-05

Publication date

1999-05-25

1996-09-05 Application filed by Fredrik Laurell filed Critical Fredrik Laurell

1996-09-05 Priority to SE9603234A priority Critical patent/SE510442C2/sv

1996-09-05 Publication of SE9603234D0 publication Critical patent/SE9603234D0/xx

1997-09-02 Priority to US09/242,892 priority patent/US6259711B1/en

1997-09-02 Priority to PCT/SE1997/001466 priority patent/WO1998010497A1/en

1997-09-02 Priority to CA002264753A priority patent/CA2264753A1/en

1997-09-02 Priority to EP97939284A priority patent/EP0923799B1/de

1997-09-02 Priority to DE69731475T priority patent/DE69731475T2/de

1997-09-02 Priority to AT97939284T priority patent/ATE281704T1/de

1997-09-02 Priority to JP10512566A priority patent/JP2000517481A/ja

1998-03-06 Publication of SE9603234L publication Critical patent/SE9603234L/

1999-05-25 Publication of SE510442C2 publication Critical patent/SE510442C2/sv

Links

230000003287 optical effect Effects 0.000 claims abstract description 11
239000000463 material Substances 0.000 claims description 33
239000013078 crystal Substances 0.000 claims description 31
230000010287 polarization Effects 0.000 claims description 18
238000000034 method Methods 0.000 claims description 13
239000002019 doping agent Substances 0.000 claims description 6
239000013307 optical fiber Substances 0.000 claims description 6
238000009792 diffusion process Methods 0.000 claims description 5
239000011521 glass Substances 0.000 claims description 4
229910009372 YVO4 Inorganic materials 0.000 claims description 3
239000006096 absorbing agent Substances 0.000 claims description 3
239000006117 anti-reflective coating Substances 0.000 claims description 2
239000003292 glue Substances 0.000 claims description 2
230000000087 stabilizing effect Effects 0.000 claims description 2
238000007738 vacuum evaporation Methods 0.000 claims description 2
230000005855 radiation Effects 0.000 abstract description 4
238000004519 manufacturing process Methods 0.000 description 10
229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 10
238000006243 chemical reaction Methods 0.000 description 9
230000008901 benefit Effects 0.000 description 6
239000007787 solid Substances 0.000 description 5
229910052779 Neodymium Inorganic materials 0.000 description 3
229910052769 Ytterbium Inorganic materials 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
238000005457 optimization Methods 0.000 description 3
238000005086 pumping Methods 0.000 description 3
229910052761 rare earth metal Inorganic materials 0.000 description 3
150000002910 rare earth metals Chemical class 0.000 description 3
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
229910003327 LiNbO3 Inorganic materials 0.000 description 2
229910012463 LiTaO3 Inorganic materials 0.000 description 2
230000002411 adverse Effects 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000013461 design Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
239000000835 fiber Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
239000004033 plastic Substances 0.000 description 2
229920003023 plastic Polymers 0.000 description 2
230000003595 spectral effect Effects 0.000 description 2
238000012546 transfer Methods 0.000 description 2
229910052691 Erbium Inorganic materials 0.000 description 1
229910052688 Gadolinium Inorganic materials 0.000 description 1
229910052689 Holmium Inorganic materials 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
230000001066 destructive effect Effects 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
230000005684 electric field Effects 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000005342 ion exchange Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0615—Shape of end-face
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers

Landscapes

Physics & Mathematics (AREA)
Electromagnetism (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Optics & Photonics (AREA)
Nonlinear Science (AREA)
Lasers (AREA)
Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

SE9603234A 1996-09-05 1996-09-05 Mikrochipslaser SE510442C2 (sv)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
SE9603234A SE510442C2 (sv)	1996-09-05	1996-09-05	Mikrochipslaser
US09/242,892 US6259711B1 (en)	1996-09-05	1997-09-02	Laser
PCT/SE1997/001466 WO1998010497A1 (en)	1996-09-05	1997-09-02	Laser
CA002264753A CA2264753A1 (en)	1996-09-05	1997-09-02	Laser
EP97939284A EP0923799B1 (de)	1996-09-05	1997-09-02	Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators
DE69731475T DE69731475T2 (de)	1996-09-05	1997-09-02	Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators
AT97939284T ATE281704T1 (de)	1996-09-05	1997-09-02	Frequenzverdoppelter laser mit einem quasiphasenangepassten nichtlinearen element innerhalb des resonators
JP10512566A JP2000517481A (ja)	1996-09-05	1997-09-02	レーザ

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
SE9603234A SE510442C2 (sv)	1996-09-05	1996-09-05	Mikrochipslaser

Publications (3)

Publication Number	Publication Date
SE9603234D0 SE9603234D0 (sv)	1996-09-05
SE9603234L SE9603234L (sv)	1998-03-06
SE510442C2 true SE510442C2 (sv)	1999-05-25

Family

ID=20403783

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE9603234A SE510442C2 (sv)	1996-09-05	1996-09-05	Mikrochipslaser

Country Status (8)

Country	Link
US (1)	US6259711B1 (de)
EP (1)	EP0923799B1 (de)
JP (1)	JP2000517481A (de)
AT (1)	ATE281704T1 (de)
CA (1)	CA2264753A1 (de)
DE (1)	DE69731475T2 (de)
SE (1)	SE510442C2 (de)
WO (1)	WO1998010497A1 (de)

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US6373865B1 (en) *	2000-02-01	2002-04-16	John E. Nettleton	Pseudo-monolithic laser with an intracavity optical parametric oscillator
US6633596B1 (en) *	2000-05-31	2003-10-14	University Corporation For Atmospheric Research	Frequency stable pulsed laser
US6914921B2 (en) *	2001-09-28	2005-07-05	The Furukawa Electric Company, Ltd.	Optical filter, laser module, and wavelength locker module
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US20040076204A1 (en) *	2002-10-16	2004-04-22	Kruschwitz Brian E.	External cavity organic laser
JP2004296706A (ja) *	2003-03-26	2004-10-21	Sony Corp	光共振器及びレーザ発振器
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FR2884651B1 (fr) *	2005-04-15	2007-11-30	Oxxius Sa Sa	"dispositif laser lineaire monolithique monofrequence, et systeme comprenant un tel dispositif"
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KR101102786B1 (ko) *	2005-05-27	2012-01-05	로베르트 보쉬 게엠베하	내연기관용 점화 장치
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US7570676B2 (en) *	2006-05-09	2009-08-04	Spectralus Corporation	Compact efficient and robust ultraviolet solid-state laser sources based on nonlinear frequency conversion in periodically poled materials
KR100764424B1 (ko) *	2006-08-30	2007-10-05	삼성전기주식회사	파장변환 레이저 장치 및 이에 사용되는 비선형 광학결정
JP2008177226A (ja) *	2007-01-16	2008-07-31	Cyber Laser Kk	レーザパルス発生装置及び方法
US7573930B2 (en) *	2007-06-14	2009-08-11	Innovavent Gmbh	Anamorphotic solid-sate laser
JP2009259914A (ja) *	2008-04-14	2009-11-05	Sony Corp	レーザ装置、レーザディスプレイ装置およびレーザ照射装置
JP2010109070A (ja) *	2008-10-29	2010-05-13	Osaka Prefecture Univ	多波長レーザー発振装置およびそれを備えてなるテラヘルツ波発生装置
EP2680377B1 (de)	2012-06-29	2017-05-10	C2C Link Corporation	Verfahren zur Herstellung eines Lasermoduls
US9197027B2 (en)	2012-07-05	2015-11-24	C2C Link Corporation	Method for making laser module
CN103050870B (zh) *	2012-10-17	2015-07-15	北京工业大学	可光纤输出的微片激光器
JP6281935B2 (ja) *	2013-10-25	2018-02-21	大学共同利用機関法人自然科学研究機構	Ｑスイッチレーザー装置
FR3025661B1 (fr) *	2014-09-05	2016-11-25	Oxxius	Systeme de generation de faisceau laser par effet non lineaire a base de cavite microchip resonante
CN118099918A (zh)	2017-09-05	2024-05-28	国立研究开发法人量子科学技术研究开发机构	光源以及测量装置
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JP7343914B2 (ja) *	2021-01-14	2023-09-13	大学共同利用機関法人自然科学研究機構	レーザ発振器

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US5982789A (en) *	1995-11-22	1999-11-09	Light Solutions Corporation	Pulsed laser with passive stabilization

1996
- 1996-09-05 SE SE9603234A patent/SE510442C2/sv unknown
1997
- 1997-09-02 EP EP97939284A patent/EP0923799B1/de not_active Expired - Lifetime
- 1997-09-02 CA CA002264753A patent/CA2264753A1/en not_active Abandoned
- 1997-09-02 WO PCT/SE1997/001466 patent/WO1998010497A1/en not_active Ceased
- 1997-09-02 DE DE69731475T patent/DE69731475T2/de not_active Expired - Lifetime
- 1997-09-02 US US09/242,892 patent/US6259711B1/en not_active Expired - Lifetime
- 1997-09-02 AT AT97939284T patent/ATE281704T1/de not_active IP Right Cessation
- 1997-09-02 JP JP10512566A patent/JP2000517481A/ja active Pending

Also Published As

Publication number	Publication date
DE69731475T2 (de)	2005-10-20
CA2264753A1 (en)	1998-03-12
EP0923799B1 (de)	2004-11-03
SE9603234D0 (sv)	1996-09-05
JP2000517481A (ja)	2000-12-26
US6259711B1 (en)	2001-07-10
DE69731475D1 (de)	2004-12-09
SE9603234L (sv)	1998-03-06
WO1998010497A1 (en)	1998-03-12
ATE281704T1 (de)	2004-11-15
EP0923799A1 (de)	1999-06-23

Publication	Publication Date	Title
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