SE7706617L - Odling av skikt av halvledaroxid - Google Patents

Odling av skikt av halvledaroxid

Info

Publication number
SE7706617L
SE7706617L SE7706617A SE7706617A SE7706617L SE 7706617 L SE7706617 L SE 7706617L SE 7706617 A SE7706617 A SE 7706617A SE 7706617 A SE7706617 A SE 7706617A SE 7706617 L SE7706617 L SE 7706617L
Authority
SE
Sweden
Prior art keywords
semiconer
cultivation
oxide layers
layers
oxide
Prior art date
Application number
SE7706617A
Other languages
English (en)
Swedish (sv)
Inventor
R P H Chang
A K Sinha
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7706617L publication Critical patent/SE7706617L/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
SE7706617A 1976-06-15 1977-06-07 Odling av skikt av halvledaroxid SE7706617L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/696,282 US4062747A (en) 1976-06-15 1976-06-15 Native growth of semiconductor oxide layers

Publications (1)

Publication Number Publication Date
SE7706617L true SE7706617L (sv) 1977-12-16

Family

ID=24796425

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7706617A SE7706617L (sv) 1976-06-15 1977-06-07 Odling av skikt av halvledaroxid

Country Status (11)

Country Link
US (1) US4062747A (fr)
JP (1) JPS52153664A (fr)
BE (1) BE855582A (fr)
CA (1) CA1084816A (fr)
DE (1) DE2726265A1 (fr)
ES (1) ES459808A1 (fr)
FR (1) FR2355377A1 (fr)
GB (1) GB1585558A (fr)
IT (1) IT1083514B (fr)
NL (1) NL7706533A (fr)
SE (1) SE7706617L (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210701A (en) * 1972-08-14 1980-07-01 Precision Thin Film Corporation Method and apparatus for depositing film on a substrate, and products produced thereby
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
US4300989A (en) * 1979-10-03 1981-11-17 Bell Telephone Laboratories, Incorporated Fluorine enhanced plasma growth of native layers on silicon
US4323589A (en) * 1980-05-07 1982-04-06 International Business Machines Corporation Plasma oxidation
US4377437A (en) * 1981-05-22 1983-03-22 Bell Telephone Laboratories, Incorporated Device lithography by selective ion implantation
FR2555360B1 (fr) * 1983-11-17 1986-10-10 Berenguer Marc Dispositif pour la realisation de couches dielectriques minces a la surface de corps solides
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4874716A (en) * 1986-04-01 1989-10-17 Texas Instrument Incorporated Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface
US5223458A (en) * 1990-12-18 1993-06-29 Raytheon Company Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species
US5880483A (en) * 1990-12-18 1999-03-09 Shanfield; Stanley R. Semiconductor devices
JP3489334B2 (ja) * 1996-05-27 2004-01-19 ソニー株式会社 半導体装置の酸化膜形成方法および酸化膜形成装置
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN116490786A (zh) * 2021-01-29 2023-07-25 维耶尔公司 电子束检测

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
LU69164A1 (fr) * 1974-01-15 1974-04-08

Also Published As

Publication number Publication date
FR2355377A1 (fr) 1978-01-13
BE855582A (fr) 1977-10-03
CA1084816A (fr) 1980-09-02
FR2355377B1 (fr) 1981-06-12
NL7706533A (nl) 1977-12-19
DE2726265A1 (de) 1977-12-29
US4062747A (en) 1977-12-13
JPS52153664A (en) 1977-12-20
GB1585558A (en) 1981-03-04
IT1083514B (it) 1985-05-21
ES459808A1 (es) 1978-04-01

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