SE7709059L - Selektiv dopning av en halvledarkropp - Google Patents
Selektiv dopning av en halvledarkroppInfo
- Publication number
- SE7709059L SE7709059L SE7709059A SE7709059A SE7709059L SE 7709059 L SE7709059 L SE 7709059L SE 7709059 A SE7709059 A SE 7709059A SE 7709059 A SE7709059 A SE 7709059A SE 7709059 L SE7709059 L SE 7709059L
- Authority
- SE
- Sweden
- Prior art keywords
- semicide
- selective doping
- aluminum
- silicon dioxide
- aluminum oxide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/718,806 US4029528A (en) | 1976-08-30 | 1976-08-30 | Method of selectively doping a semiconductor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7709059L true SE7709059L (sv) | 1978-03-01 |
Family
ID=24887633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7709059A SE7709059L (sv) | 1976-08-30 | 1977-08-10 | Selektiv dopning av en halvledarkropp |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4029528A (fr) |
| JP (1) | JPS5329665A (fr) |
| AU (1) | AU502461B2 (fr) |
| BE (1) | BE858207A (fr) |
| DE (1) | DE2737912A1 (fr) |
| FR (1) | FR2363190A1 (fr) |
| GB (1) | GB1577165A (fr) |
| IT (1) | IT1086173B (fr) |
| PL (1) | PL119840B1 (fr) |
| SE (1) | SE7709059L (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4066485A (en) * | 1977-01-21 | 1978-01-03 | Rca Corporation | Method of fabricating a semiconductor device |
| JPS5431273A (en) * | 1977-08-15 | 1979-03-08 | Hitachi Ltd | Manufacture of semiconductor device |
| US4199386A (en) * | 1978-11-28 | 1980-04-22 | Rca Corporation | Method of diffusing aluminum into monocrystalline silicon |
| US5244821A (en) * | 1991-06-07 | 1993-09-14 | At&T Bell Laboratories | Bipolar fabrication method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1461531A (fr) * | 1964-10-12 | 1966-02-25 | Matsushita Electronics Corp | Procédé de fabrication des dispositifs à semi-conducteurs |
| US3560280A (en) * | 1965-11-17 | 1971-02-02 | Hitachi Ltd | Method of selective removal of oxide coatings in the manufacture of semiconductor devices |
| GB1158585A (en) * | 1965-12-06 | 1969-07-16 | Lucas Industries Ltd | Gate Controlled Switches |
| US3437533A (en) * | 1966-12-13 | 1969-04-08 | Rca Corp | Method of fabricating semiconductor devices |
| SE329599B (fr) * | 1967-02-13 | 1970-10-19 | Asea Ab | |
| US3589953A (en) * | 1968-02-14 | 1971-06-29 | Gen Motors Corp | Vapor diffusion system for semiconductors |
| GB1199399A (en) * | 1968-06-21 | 1970-07-22 | Matsushita Electronics Corp | Improvements in or relating to the Manufacture of Semiconductors. |
| US3681155A (en) * | 1970-06-25 | 1972-08-01 | Motorola Inc | Aluminum diffusions |
| US3798079A (en) * | 1972-06-05 | 1974-03-19 | Westinghouse Electric Corp | Triple diffused high voltage transistor |
| US3997379A (en) * | 1975-06-20 | 1976-12-14 | Rca Corporation | Diffusion of conductivity modifiers into a semiconductor body |
-
1976
- 1976-08-30 US US05/718,806 patent/US4029528A/en not_active Expired - Lifetime
-
1977
- 1977-07-28 IT IT26285/77A patent/IT1086173B/it active
- 1977-08-10 SE SE7709059A patent/SE7709059L/xx not_active Application Discontinuation
- 1977-08-18 GB GB34733/77A patent/GB1577165A/en not_active Expired
- 1977-08-19 PL PL1977200365A patent/PL119840B1/pl not_active IP Right Cessation
- 1977-08-23 DE DE19772737912 patent/DE2737912A1/de not_active Withdrawn
- 1977-08-24 AU AU28173/77A patent/AU502461B2/en not_active Expired
- 1977-08-26 JP JP10312277A patent/JPS5329665A/ja active Pending
- 1977-08-29 FR FR7726227A patent/FR2363190A1/fr active Granted
- 1977-08-29 BE BE180515A patent/BE858207A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2363190B1 (fr) | 1982-05-28 |
| JPS5329665A (en) | 1978-03-20 |
| FR2363190A1 (fr) | 1978-03-24 |
| PL200365A1 (pl) | 1978-04-24 |
| GB1577165A (en) | 1980-10-22 |
| DE2737912A1 (de) | 1978-03-02 |
| BE858207A (fr) | 1977-12-16 |
| US4029528A (en) | 1977-06-14 |
| PL119840B1 (en) | 1982-01-30 |
| AU502461B2 (en) | 1979-07-26 |
| IT1086173B (it) | 1985-05-28 |
| AU2817377A (en) | 1979-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
Ref document number: 7709059-5 |