JPS5373072A - Formation of oxidized film - Google Patents

Formation of oxidized film

Info

Publication number
JPS5373072A
JPS5373072A JP14955876A JP14955876A JPS5373072A JP S5373072 A JPS5373072 A JP S5373072A JP 14955876 A JP14955876 A JP 14955876A JP 14955876 A JP14955876 A JP 14955876A JP S5373072 A JPS5373072 A JP S5373072A
Authority
JP
Japan
Prior art keywords
formation
oxidized film
contracting
impurity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14955876A
Other languages
Japanese (ja)
Inventor
Seiji Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14955876A priority Critical patent/JPS5373072A/en
Publication of JPS5373072A publication Critical patent/JPS5373072A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form an oxidized film containing no impurity by contracting the defect inside a substrate through heat treatment after the formation an oxide containing halogen atoms on the semiconductor layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14955876A 1976-12-13 1976-12-13 Formation of oxidized film Pending JPS5373072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14955876A JPS5373072A (en) 1976-12-13 1976-12-13 Formation of oxidized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14955876A JPS5373072A (en) 1976-12-13 1976-12-13 Formation of oxidized film

Publications (1)

Publication Number Publication Date
JPS5373072A true JPS5373072A (en) 1978-06-29

Family

ID=15477786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14955876A Pending JPS5373072A (en) 1976-12-13 1976-12-13 Formation of oxidized film

Country Status (1)

Country Link
JP (1) JPS5373072A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130536A (en) * 1982-01-29 1983-08-04 Origin Electric Co Ltd Surface stabilization method for silicon semiconductor element
JPS58130537A (en) * 1982-01-29 1983-08-04 Origin Electric Co Ltd Surface stabilization method for silicon semiconductor element
JPS635534A (en) * 1986-06-25 1988-01-11 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6313171U (en) * 1986-07-10 1988-01-28
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
US5846888A (en) * 1996-09-27 1998-12-08 Micron Technology, Inc. Method for in-situ incorporation of desirable impurities into high pressure oxides

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130536A (en) * 1982-01-29 1983-08-04 Origin Electric Co Ltd Surface stabilization method for silicon semiconductor element
JPS58130537A (en) * 1982-01-29 1983-08-04 Origin Electric Co Ltd Surface stabilization method for silicon semiconductor element
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
JPS635534A (en) * 1986-06-25 1988-01-11 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6313171U (en) * 1986-07-10 1988-01-28
US5846888A (en) * 1996-09-27 1998-12-08 Micron Technology, Inc. Method for in-situ incorporation of desirable impurities into high pressure oxides

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