SE8204247L - REFERENCE MONETARY GENERATOR - Google Patents

REFERENCE MONETARY GENERATOR

Info

Publication number
SE8204247L
SE8204247L SE8204247A SE8204247A SE8204247L SE 8204247 L SE8204247 L SE 8204247L SE 8204247 A SE8204247 A SE 8204247A SE 8204247 A SE8204247 A SE 8204247A SE 8204247 L SE8204247 L SE 8204247L
Authority
SE
Sweden
Prior art keywords
misfet
gate
misfets
output terminal
supplied
Prior art date
Application number
SE8204247A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE455544B (en
SE8204247D0 (en
Inventor
J Sakaguchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SE8204247D0 publication Critical patent/SE8204247D0/en
Publication of SE8204247L publication Critical patent/SE8204247L/en
Publication of SE455544B publication Critical patent/SE455544B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A reference voltage generator includes a first n-channel MISFET which has a p+-type polycrystalline silicon gate electrode, and second and third n-channel MISFETs which have n+-type polycrystalline silicon gate electrodes. The first MISFET has its gate and source coupled in common. The second MISFET has its gate coupled to the drain of the first MISFET, and has its source coupled to an output terminal. The third MISFET is supplied across its gate and source with a voltage which is delivered to the output terminal. First and second bias currents to be supplied to the first and second MISFETs respectively are made levels proportional to the drain current of the third MISFET. As a result, the output voltage of the output terminal is made a level which is substantially in agreement with the difference between the threshold voltages of the first and second MISFETs. The output voltage of this circuit is allowed to exhibit favorable temperature characteristics by properly setting the ratio of the first bias current and the second bias current.
SE8204247A 1981-07-31 1982-07-09 REFERENCE MONETARY GENERATOR SE455544B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56119072A JPS5822423A (en) 1981-07-31 1981-07-31 Reference voltage generating circuit

Publications (3)

Publication Number Publication Date
SE8204247D0 SE8204247D0 (en) 1982-07-09
SE8204247L true SE8204247L (en) 1983-02-01
SE455544B SE455544B (en) 1988-07-18

Family

ID=14752184

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8204247A SE455544B (en) 1981-07-31 1982-07-09 REFERENCE MONETARY GENERATOR

Country Status (9)

Country Link
US (1) US4454467A (en)
JP (1) JPS5822423A (en)
DE (1) DE3228574A1 (en)
FR (1) FR2510781A1 (en)
GB (1) GB2105072B (en)
HK (1) HK45686A (en)
IT (1) IT1215216B (en)
MY (1) MY8600556A (en)
SE (1) SE455544B (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59212927A (en) * 1983-05-18 1984-12-01 Mitsubishi Electric Corp Constant voltage generating circuit
IT1179823B (en) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom DIFFERENTIAL REFERENCE VOLTAGE GENERATOR FOR SINGLE POWER INTEGRATED CIRCUITS IN NMOS TECHNOLOGY
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
US5187685A (en) * 1985-11-22 1993-02-16 Hitachi, Ltd. Complementary MISFET voltage generating circuit for a semiconductor memory
JPS62188255A (en) * 1986-02-13 1987-08-17 Toshiba Corp Reference voltage generating circuit
KR910001293B1 (en) * 1986-03-31 1991-02-28 가부시키가이샤 도시바 Power supply voltage detection circuit
US4789825A (en) * 1986-05-14 1988-12-06 American Telephone And Telegraph Co., At&T Bell Laboratories Integrated circuit with channel length indicator
US4837459A (en) * 1987-07-13 1989-06-06 International Business Machines Corp. CMOS reference voltage generation
NL8800851A (en) * 1988-04-05 1989-11-01 Philips Nv SEMICONDUCTOR MEMORY DEVICE.
US4994688A (en) * 1988-05-25 1991-02-19 Hitachi Ltd. Semiconductor device having a reference voltage generating circuit
US5254880A (en) * 1988-05-25 1993-10-19 Hitachi, Ltd. Large scale integrated circuit having low internal operating voltage
JP2804162B2 (en) * 1989-09-08 1998-09-24 株式会社日立製作所 Constant current constant voltage circuit
NL9001018A (en) * 1990-04-27 1991-11-18 Philips Nv REFERENCE GENERATOR.
US5200921A (en) * 1990-09-20 1993-04-06 Fujitsu Limited Semiconductor integrated circuit including P-channel MOS transistors having different threshold voltages
JP2839203B2 (en) * 1990-09-20 1998-12-16 富士通株式会社 Semiconductor integrated circuit
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
JP3318363B2 (en) * 1992-09-02 2002-08-26 株式会社日立製作所 Reference voltage generation circuit
US5703476A (en) * 1995-06-30 1997-12-30 Sgs-Thomson Microelectronics, S.R.L. Reference voltage generator, having a double slope temperature characteristic, for a voltage regulator of an automotive alternator
TW307060B (en) * 1996-02-15 1997-06-01 Advanced Micro Devices Inc CMOS current mirror
US5877615A (en) * 1997-11-06 1999-03-02 Utek Semiconductor Corporation Dynamic input reference voltage adjuster
JP2002299469A (en) * 2001-04-04 2002-10-11 Seiko Instruments Inc Semiconductor device
US6885239B2 (en) * 2001-10-31 2005-04-26 Kabushiki Kaisha Toshiba Mobility proportion current generator, and bias generator and amplifier using the same
JP4847103B2 (en) * 2005-11-07 2011-12-28 株式会社リコー Half band gap reference circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
JPS5632222B2 (en) * 1973-10-25 1981-07-27
US4068140A (en) * 1976-12-27 1978-01-10 Texas Instruments Incorporated MOS source follower circuit
DE2708022C3 (en) * 1977-02-24 1980-01-10 Eurosil Gmbh, 8000 Muenchen Circuit arrangement in integrated MOS technology for outputting a constant voltage
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
JPS54132753A (en) * 1978-04-05 1979-10-16 Hitachi Ltd Referential voltage generator and its application
CH628462A5 (en) * 1978-12-22 1982-02-26 Centre Electron Horloger Source reference voltage.
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
GB2090442B (en) * 1980-12-10 1984-09-05 Suwa Seikosha Kk A low voltage regulation circuit

Also Published As

Publication number Publication date
IT1215216B (en) 1990-01-31
MY8600556A (en) 1986-12-31
DE3228574A1 (en) 1983-04-21
FR2510781A1 (en) 1983-02-04
HK45686A (en) 1986-06-27
US4454467A (en) 1984-06-12
GB2105072A (en) 1983-03-16
JPS5822423A (en) 1983-02-09
IT8222683A0 (en) 1982-07-30
SE455544B (en) 1988-07-18
SE8204247D0 (en) 1982-07-09
FR2510781B1 (en) 1985-03-15
GB2105072B (en) 1985-05-01

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