SE8401509L - PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE - Google Patents

PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE

Info

Publication number
SE8401509L
SE8401509L SE8401509A SE8401509A SE8401509L SE 8401509 L SE8401509 L SE 8401509L SE 8401509 A SE8401509 A SE 8401509A SE 8401509 A SE8401509 A SE 8401509A SE 8401509 L SE8401509 L SE 8401509L
Authority
SE
Sweden
Prior art keywords
semiconducers
phosphormal
manufacture
materials
equipment
Prior art date
Application number
SE8401509A
Other languages
Swedish (sv)
Other versions
SE8401509D0 (en
Inventor
M A Kuck
C G Michel
R Schachter
J A Baumann
P M Raccah
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/419,537 external-priority patent/US4620968A/en
Priority claimed from US06/442,208 external-priority patent/US4508931A/en
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of SE8401509D0 publication Critical patent/SE8401509D0/en
Publication of SE8401509L publication Critical patent/SE8401509L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/003—Phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/02—Preparation of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/04—Purification of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/081—Other phosphides of alkali metals, alkaline-earth metals or magnesium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K21/00—Fireproofing materials
    • C09K21/02—Inorganic materials
    • C09K21/04—Inorganic materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/283—Borides, phosphides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/29—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geology (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Luminescent Compositions (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Thin Magnetic Films (AREA)
SE8401509A 1981-12-30 1984-03-19 PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE SE8401509L (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33570681A 1981-12-30 1981-12-30
US06/419,537 US4620968A (en) 1981-12-30 1982-09-17 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US06/442,208 US4508931A (en) 1981-12-30 1982-11-16 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them

Publications (2)

Publication Number Publication Date
SE8401509D0 SE8401509D0 (en) 1984-03-19
SE8401509L true SE8401509L (en) 1984-03-19

Family

ID=27407080

Family Applications (4)

Application Number Title Priority Date Filing Date
SE8207299A SE8207299L (en) 1981-12-30 1982-12-21 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401509A SE8401509L (en) 1981-12-30 1984-03-19 PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE
SE8401511A SE8401511L (en) 1981-12-30 1984-03-19 PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE
SE8401510A SE8401510L (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SE8207299A SE8207299L (en) 1981-12-30 1982-12-21 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN

Family Applications After (2)

Application Number Title Priority Date Filing Date
SE8401511A SE8401511L (en) 1981-12-30 1984-03-19 PHOSPHORMAL MATERIALS, MANUFACTURE AND USE thereof, AND SEMICONDUCERS AND OTHER EQUIPMENT WHICH THEY INCLUDE
SE8401510A SE8401510L (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN

Country Status (23)

Country Link
JP (1) JPH0611644B2 (en)
KR (1) KR840003144A (en)
AU (1) AU553091B2 (en)
BR (1) BR8207569A (en)
CA (1) CA1215521A (en)
CH (3) CH663609A5 (en)
DE (1) DE3247869A1 (en)
DK (1) DK578782A (en)
ES (2) ES8406000A1 (en)
FR (1) FR2530866B1 (en)
GB (2) GB2113663B (en)
GR (1) GR78374B (en)
HK (2) HK38288A (en)
IE (1) IE53683B1 (en)
IL (1) IL67565A0 (en)
IT (1) IT1210712B (en)
MA (1) MA19673A1 (en)
NL (1) NL8205055A (en)
NO (1) NO824406L (en)
PL (1) PL239879A1 (en)
PT (1) PT76047B (en)
SE (4) SE8207299L (en)
SG (1) SG97687G (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
DK318184A (en) * 1984-02-17 1985-08-18 Stauffer Chemical Co HIGH-VACUUM DISPOSAL PROCESSES USING A CONTINUOUS PNIC TIME DELIVERY SYSTEM
AU2993684A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vapour deposition of pnictides
AU2993784A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vacuum deposition of pnictides
GB9010000D0 (en) * 1990-05-03 1990-06-27 Stc Plc Phosphide films
JP4958076B2 (en) * 2008-01-25 2012-06-20 住友電気工業株式会社 Method for analyzing red phosphorus in resin composition
GB201601838D0 (en) 2016-02-02 2016-03-16 Univ Surrey A composition
KR102307523B1 (en) * 2019-10-30 2021-09-30 울산과학기술원 Manufacuring method for polyphosphide precursor, manufacuring method for crystalline red phosphorus thin film and electronic device application
CN111170292B (en) * 2019-11-04 2023-09-29 湖北大学 Preparation method and application of fiber-phase red phosphorus nanoparticles
CN113932082A (en) * 2021-10-11 2022-01-14 宁夏大学 Phosphorus source transmission device for battery piece diffusion process and temperature control system comprising phosphorus source transmission device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397038A (en) * 1964-11-30 1968-08-13 Hooker Chemical Corp Manufacture of a reactive trisodium phosphide
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
GB2055774B (en) * 1979-04-09 1983-02-02 Plessey Co Ltd Methods of producing semiconductor materials

Also Published As

Publication number Publication date
SE8401509D0 (en) 1984-03-19
SE8401511D0 (en) 1984-03-19
IE823057L (en) 1983-06-30
PT76047A (en) 1983-01-01
FR2530866B1 (en) 1985-07-12
HK38288A (en) 1988-06-03
JPH05201712A (en) 1993-08-10
AU553091B2 (en) 1986-07-03
SE8207299L (en) 1983-07-01
ES518662A0 (en) 1984-06-16
ES8600164A1 (en) 1985-10-01
NO824406L (en) 1983-07-01
BR8207569A (en) 1983-10-25
FR2530866A1 (en) 1984-01-27
NL8205055A (en) 1983-07-18
GB2172585B (en) 1987-01-28
PL239879A1 (en) 1984-03-26
IT8249774A0 (en) 1982-12-30
DE3247869A1 (en) 1983-08-18
MA19673A1 (en) 1983-07-01
JPH0611644B2 (en) 1994-02-16
IT1210712B (en) 1989-09-20
AU9158882A (en) 1983-07-07
GR78374B (en) 1984-09-26
ES8406000A1 (en) 1984-06-16
GB2113663B (en) 1986-10-29
IE53683B1 (en) 1989-01-04
SE8401510D0 (en) 1984-03-19
SE8401510L (en) 1984-03-19
CH672778A5 (en) 1989-12-29
GB2113663A (en) 1983-08-10
HK38188A (en) 1988-06-03
CA1215521A (en) 1986-12-23
GB8516583D0 (en) 1985-08-07
CH663609A5 (en) 1987-12-31
IL67565A0 (en) 1983-05-15
KR840003144A (en) 1984-08-13
SE8401511L (en) 1984-03-19
GB2172585A (en) 1986-09-24
SG97687G (en) 1988-06-03
ES530659A0 (en) 1985-10-01
DK578782A (en) 1983-07-01
SE8207299D0 (en) 1982-12-21
PT76047B (en) 1985-11-18
CH666252A5 (en) 1988-07-15

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